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南京大学光伏工程中心, 南京大学物理学院,江苏 南京,210093
纸质出版日期:2012-7-10,
网络出版日期:2012-7-10,
收稿日期:2012-4-9,
修回日期:2012-5-11,
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谢正芳, 单文光, 吴小山, 张凤鸣. 退火温度对富硅氮化硅薄膜发光特性和结构的影响[J]. 发光学报, 2012,33(7): 780-784
XIE Zheng-fang, SHAN Wen-guang, WU Xiao-shan, ZHANG Feng-ming. Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride[J]. Chinese Journal of Luminescence, 2012,33(7): 780-784
谢正芳, 单文光, 吴小山, 张凤鸣. 退火温度对富硅氮化硅薄膜发光特性和结构的影响[J]. 发光学报, 2012,33(7): 780-784 DOI: 10.3788/fgxb20123307.0780.
XIE Zheng-fang, SHAN Wen-guang, WU Xiao-shan, ZHANG Feng-ming. Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride[J]. Chinese Journal of Luminescence, 2012,33(7): 780-784 DOI: 10.3788/fgxb20123307.0780.
采用直流等离子体增强化学气相沉积(PECVD)法在(100)单晶硅片表面生长富硅氮化硅薄膜
研究了不同的退火温度对氮化硅薄膜发光性质和结构的影响。研究发现
随着退火温度的升高
氮化硅薄膜的发光强度逐渐减弱
发光是由缺陷能级引起的
在900 ℃时荧光基本消失。XPS测试表明
在N
2
氛围900 ℃下退火
氮化硅薄膜中未有硅相析出
故未表现出硅量子点的发光。FTIR测试也为PL结论提供了一定的证据。
Silicon-rich silicon nitride film was deposited by plasma enhanced chemical vapor deposition (PECVD) on (100)-oriented monocrystalline silicon
according to silicon solar cell process. Photoluminescence (PL) performance of the films at annealing temperatures in N
2
ambient was studied
showing that temperatures had great effect on the characteristics. Excited by 325 nm line
PL from defect-related states was only observed in the film and Si clusters has not been formed at annealing temperature 900 ℃. After annealed at different temperature
PL intensity decreased with increasing temperature. PL peak originated from defect energy Si dangling bond (K center). In this work
At 900 ℃
disappearance of PL peak was attributed to increasing non-radiation recombination and silicon clusters has not been formed. Structure of silicon nitride has been measured by X-ray photo-electron spectroscopy (XPS) showing binding energy at 101.8 eV and indicated that silicon phase has not been separated from silicon nitride. Infrared (FTIR) measurement provided a good confirm to PL analysis.
氮化硅PECVD光致发光硅悬挂键硅纳米团簇
silicon nitridePECVDphotoluminescencesilicon dangling bondsilicon clusters
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