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1. 长春理工大学 材料科学与工程学院,吉林 长春,130022
2. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
3. 中国科学院 研究生院, 北京 100039
纸质出版日期:2012-7-10,
网络出版日期:2012-7-10,
收稿日期:2012-2-15,
修回日期:2012-3-28,
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徐志堃, 赵东旭, 孙兰兰, 鄂书林, 张振中, 秦杰明, 申德振. 树形结构Si/ZnO纳米线阵列的制备及光学性能[J]. 发光学报, 2012,33(7): 760-763
XU Zhi-kun, ZHAO Dong-xu, SUN Lan-lan, E Shu-lin, ZHANG Zhen-zhong, QIN Jie-ming, SHEN De-zhen. Synthesis and Optical Properties of Si/ZnO Branched Nanowire Arrays[J]. Chinese Journal of Luminescence, 2012,33(7): 760-763
徐志堃, 赵东旭, 孙兰兰, 鄂书林, 张振中, 秦杰明, 申德振. 树形结构Si/ZnO纳米线阵列的制备及光学性能[J]. 发光学报, 2012,33(7): 760-763 DOI: 10.3788/fgxb20123307.0760.
XU Zhi-kun, ZHAO Dong-xu, SUN Lan-lan, E Shu-lin, ZHANG Zhen-zhong, QIN Jie-ming, SHEN De-zhen. Synthesis and Optical Properties of Si/ZnO Branched Nanowire Arrays[J]. Chinese Journal of Luminescence, 2012,33(7): 760-763 DOI: 10.3788/fgxb20123307.0760.
用一种低成本的方法制备出了树形结构Si/ZnO纳米线阵列。首先在室温条件下用金属辅助化学腐蚀法在Si(100)衬底上制备了Si纳米线阵列
Si纳米线的直径尺寸及分布都很均匀
通过改变腐蚀时间
能够得到高度不同的Si纳米线阵列。利用磁控溅射在Si纳米线表面制备一层ZnO薄膜
然后利用水热法在Si纳米线阵列上生长了ZnO纳米线。通过扫描电子显微镜(SEM)、能谱分析仪(EDS)和光致发光(PL)测试对样品进行了表征。通过这种方法制备的Si/ZnO复合结构在太阳能电池、光催化等领域有潜在应用价值。
A low-cost approach for fabricating Si/ZnO branched nanowire arrays was reported. The Si nanowire arrays were prepared on Si(100) substrate using a metal-assisted chemical etching process at room temperature. The diameter and distribution are uniform
and the length of Si nanowire could be tuned by varying the etching time. The ZnO film on the surface of Si nanowire was obtained by magnetron sputtering method and then the ZnO nanowires were prepared via hydrothermal method. The samples were characterized by field-emission scanning electron microscopy (SEM)
energy dispersive X-ray spectroscopy(EDS) and photoluminescence (PL). The Si/ZnO branched nanowire arrays are suitable for applications in photovoltaic and photocatalysis.
ZnOSi金属辅助化学腐蚀水热法纳米线阵列
ZnOSimetal-assisted chemical etchinghydrothermal methodnanowire arrays
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