1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性

李再金; 芦鹏; 李特; 曲轶; 薄报学; 刘国军; 马晓辉

doi:10.3788/fgxb20123306.0647

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1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性

器件制备及器件物理 | 更新时间：2020-08-12

- 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性
- Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode
- 发光学报 2012年33卷第6期页码：647-650
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61107054)();吉林省科技发展计划(201201124)资助项目()
- DOI：10.3788/fgxb20123306.0647
  中图分类号： TN248.4
- 纸质出版日期：2012-6-10，
  
  网络出版日期：2012-6-10，
  
  收稿日期：2012-3-23，
  
  修回日期：2012-4-6，
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李再金, 芦鹏, 李特, 曲轶, 薄报学, 刘国军, 马晓辉. 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J]. 发光学报, 2012,(6): 647-650

LI Zai-jin, LU Peng, LI Te, QU Yi, BO Bao-xue, LIU Guo-jun, MA Xiao-hui. Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 647-650
李再金, 芦鹏, 李特, 曲轶, 薄报学, 刘国军, 马晓辉. 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J]. 发光学报, 2012,(6): 647-650 DOI： 10.3788/fgxb20123306.0647.

LI Zai-jin, LU Peng, LI Te, QU Yi, BO Bao-xue, LIU Guo-jun, MA Xiao-hui. Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 647-650 DOI： 10.3788/fgxb20123306.0647.

摘要

研究了1.06 μm InGaAs/InGaAsP量子阱半导体激光器厘米bar模块的温度特性

测试分析了该模块的输出光功率、阈值电流、转换效率和光谱随注入电流及管芯温度变化的特性。结果表明

器件在15~55 ℃范围内所测的输出光功率由40.7 W降低到29.4 W

阈值电流由9.29 A升高到17.24 A

转换效率由54.22%降低到37.55%

光谱漂移为0.37 nm/℃

特征温度为68.6 K。实验结果表明

为保持器件性能的稳定

在实际应用过程中应该使器件的温度控制在15~25 ℃范围内。

Abstract

The temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode was studied. The output optical power

threshold current

conversion efficiency and spectra of the module were measured and analyzed when the module was operated with different current at different temperature. The results show that the module’s characteristic changes with the temperature in the range of 15 ℃ to 55 ℃. The module’s CW output optical power reduced from 40.7 W to 29.4 W. The threshold current increased from 9.29 A to 17.24 A. The conversion efficiency reduced from 54.22% to 37.55%. The lasing wavelength shift is 0.37 nm/℃ and the characteristic temperature is 68.6 K. The temperature of the device in the actual application process should be controlled in the range of 15 ℃ to 25 ℃ to maintain the stability of the device performance.

关键词

半导体激光器1.06 μm阈值电流温度特性

Keywords

semiconductor laser1.06 μmthreshold currenttemperature characteristic

references

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Feng Guangzhi, Gu Yuanyuan, Shan Xiaonan, et al. 808 nm high power diode lase stack with polarization coupling [J]. Chin. J. Lumin.(发光学报), 2009, 29(4):695-700 (in Chinese).

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