初始化生长条件对a-GaN中应变的影响

贾辉; 陈一仁; 孙晓娟; 黎大兵; 宋航; 蒋红; 缪国庆; 李志明

doi:10.3788/fgxb20123306.0581

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初始化生长条件对a-GaN中应变的影响

材料合成及性能研究 | 更新时间：2020-08-12

- 初始化生长条件对a-GaN中应变的影响
- Effect of Initial Growth Conditions on The Strain in a-plane GaN
- 发光学报 2012年33卷第6期页码：581-585
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  国家基础研究发展计划(2011CB301901)();国家自然科学基金(51072196,51072195)();"();863"();计划(2011A
- DOI：10.3788/fgxb20123306.0581
  中图分类号： O471
- 纸质出版日期：2012-6-10，
  
  网络出版日期：2012-6-10，
  
  收稿日期：2012-3-9，
  
  修回日期：2012-3-20，
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贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. 初始化生长条件对a-GaN中应变的影响[J]. 发光学报, 2012,(6): 581-585

GU Hui, CHEN Yi-Ren, SUN Xiao-Juan, LI Da-Bing, SONG Hang, JIANG Hong, JIU Guo-Qiang, LI Zhi-Meng. Effect of Initial Growth Conditions on The Strain in a-plane GaN[J]. Chinese Journal of Luminescence, 2012,(6): 581-585
贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. 初始化生长条件对a-GaN中应变的影响[J]. 发光学报, 2012,(6): 581-585 DOI： 10.3788/fgxb20123306.0581.

GU Hui, CHEN Yi-Ren, SUN Xiao-Juan, LI Da-Bing, SONG Hang, JIANG Hong, JIU Guo-Qiang, LI Zhi-Meng. Effect of Initial Growth Conditions on The Strain in a-plane GaN[J]. Chinese Journal of Luminescence, 2012,(6): 581-585 DOI： 10.3788/fgxb20123306.0581.

摘要

利用高分辨X射线衍射(HRXRD)与拉曼散射光谱(Raman scattering spectra)研究了氮化处理与低温AlN缓冲层对低压金属有机化学气相沉积(LP-MOCVD)在

面蓝宝石衬底上外延的

面GaN薄膜中的残余应变的影响。实验结果表明:与氮化处理后生长的

-GaN相比

使用低温AlN缓冲层后生长的

-GaN具有较小的摇摆曲线的半高宽和较低的残余应变

而且其结构各向异性和残余应变各向异性也均有一定程度的降低。因此

与氮化处理相比

低温AlN缓冲层更有利于

-GaN的生长。

Abstract

The effect of nitridation treatment and the low temperature (LT) AlN buffer on structure and strain of

-plane GaN epilayers grown on

-plane sapphire by low pressure metalorganic chemical vapor deposition (LP-MOCVD) has been investigated by high resolution X-ray diffraction (HRXRD) and polarized Raman scattering spectra in backscattering configurations. For the sample using the LT-AlN buffer

the full widths at half maximum (FWHM) of X-ray rocking curves (XRC) and the strain of

-plane GaN are lower comparing with that of the sample with nitridation

which is consistent with the smaller in-plane stress anisotropic distribution in

-plane GaN epilayers with LT-AlN buffer.

关键词

a-GaN各向异性拉曼散射光谱残余应变

Keywords

a-GaNanisotropicRaman spectroscopystrain

references

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