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AlN插入层对a-AlGaN的外延生长的影响
Effect of AlN Interlayer on a-plane AlGaN Grown by MOCVD
- 发光学报 2012年33卷第5期 页码：519-524
- 作者机构：
1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
2. 中国科学院 研究生院 北京,100039
- 作者简介：
- 基金信息：国家基础研究发展计划(2011CB301901)();国家自然科学基金(51072196,51072195,60976011)资助项目()
DOI：10.3788/fgxb20123305.0519
中图分类号： O47纸质出版日期：2012-5-10，
网络出版日期：2012-5-10，
收稿日期：2012-2-8，
修回日期：2012-3-12，
扫 描 看 全 文
贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. AlN插入层对<em>a</em>-AlGaN的外延生长的影响[J]. 发光学报, 2012,(5): 519-524
JIA Hui, CHEN Yi-ren, SUN Xiao-juan, LI Da-bing, SONG Hang, JIANG Hong, MIAO Guo-qing, LI Zhi-ming. Effect of AlN Interlayer on <em>a</em>-plane AlGaN Grown by MOCVD[J]. Chinese Journal of Luminescence, 2012,(5): 519-524
贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. AlN插入层对<em>a</em>-AlGaN的外延生长的影响[J]. 发光学报, 2012,(5): 519-524 DOI： 10.3788/fgxb20123305.0519.
JIA Hui, CHEN Yi-ren, SUN Xiao-juan, LI Da-bing, SONG Hang, JIANG Hong, MIAO Guo-qing, LI Zhi-ming. Effect of AlN Interlayer on <em>a</em>-plane AlGaN Grown by MOCVD[J]. Chinese Journal of Luminescence, 2012,(5): 519-524 DOI： 10.3788/fgxb20123305.0519.
摘要
采用有机金属化学气相沉积(MOCVD)在
r
面蓝宝石衬底上生长
a
-AlGaN外延膜
研究了AlN插入层对
a
-AlGaN外延膜的应力和光学性质的影响。根据高分辨X射线衍射(HRXRD)技术和扫描电子显微镜(SEM)我们可以得到
AlN插入层有效地提高了
a
-AlGaN外延膜的晶体质量并减小了外延膜材料结构的各向异性。由拉曼光谱得到AlN插入层的引入减小了
a
-AlGaN外延膜的面内压应力
其原因是AlN插入层可以当作衬底有效的调制与减小
a
-AlGaN外延膜与
r
面蓝宝石衬底的晶格失配
从而使
a
-AlGaN的面内应力得到适当释放。对室温下的光致发光进行测量得到AlN插入层的使用使近带边发射峰(NBE)发生了红移
这可能是由于残余应力的减小引起。
Abstract
The effect of AlN interlayer on strain states and its effect on optical properties of
a
-AlGaN epilayers grown by using metal organic chemical vapor deposition (MOCVD) method are investigated. The strain is characterized by the frequency shift based on Raman spectroscopy measurement. The results show that residual strain in
a
-AlGaN grown on the AlN interlayer is relaxed due to AlN interlayer act as a stable and compliant substrate induced weakening of mechanical strength. Accordingly
the near band edge emission (NBE) peak shows red shift in room temperature photoluminescence measurement. In addition
the introduction of AlN interlayer lead to the red shift of NBE photo-luminescence peaks
which can be contribute to the strain determined by Raman spectra.
关键词
a-AlGaNAlN插入层应力拉曼光谱光致发光
Keywords
a-plane AlGaNAlN interlayerstrainraman spectraPL
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