浏览全部资源
扫码关注微信
1. 集成光电子国家重点联合实验室 吉林大学电子科学与工程学院,吉林 长春,130012
2. 大连理工大学 物理与光电工程学院, 辽宁 大连 116023
纸质出版日期:2012-5-10,
网络出版日期:2012-5-10,
收稿日期:2012-2-15,
修回日期:2012-3-28,
扫 描 看 全 文
史志锋, 伍斌, 蔡旭浦, 张金香, 王辉, 王瑾, 夏晓川, 董鑫, 张宝林, 杜国同. MOCVD法制备的p-ZnO/n-SiC 异质结器件及其电致发光性能[J]. 发光学报, 2012,(5): 514-518
SHI Zhi-feng, WU Bin, CAI Xu-pu, ZHANG Jin-xiang, WANG Hui, WANG Jin, XIA Xiao-chuan, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD[J]. Chinese Journal of Luminescence, 2012,(5): 514-518
史志锋, 伍斌, 蔡旭浦, 张金香, 王辉, 王瑾, 夏晓川, 董鑫, 张宝林, 杜国同. MOCVD法制备的p-ZnO/n-SiC 异质结器件及其电致发光性能[J]. 发光学报, 2012,(5): 514-518 DOI: 10.3788/fgxb20123305.0514.
SHI Zhi-feng, WU Bin, CAI Xu-pu, ZHANG Jin-xiang, WANG Hui, WANG Jin, XIA Xiao-chuan, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD[J]. Chinese Journal of Luminescence, 2012,(5): 514-518 DOI: 10.3788/fgxb20123305.0514.
采用光辅助金属有机化学汽相沉积(PA-MOCVD)法在n-SiC(6H)衬底上制备出As掺杂的p型ZnO薄膜
并制备出相应的p-ZnO:As/n-SiC异质结器件。X射线衍射(XRD)和光致发光(PL)测试表明
ZnO薄膜具有较好的结构和光学特性。电流-电压(
I-V
)测试结果表明
该型异质结器件具有良好的整流特性
开启电压为5.0 V
反向击穿电压约为-13 V。正向偏压下
器件的电致发光(EL)谱表现出两个分别位于紫外和可见光区域的发光峰
通过和ZnO、SiC的PL谱对照
证实异质结器件的发光峰来源于ZnO侧的辐射复合。
As-doped p-ZnO films were grown by photo-assisted metal-organic chemical vapor deposition (PA-MOCVD) system on n-SiC(6H) substrate and the p-ZnO/n-SiC heterojunction device was fabricated. The structural and optical properties of the As-doped ZnO film have been studied by X-ray diffraction (XRD) and photoluminescence (PL) measurements. A typical p-n junction rectification behavior was acquired with a turn-on voltage of 5.0 V and a reverse breakdown voltage of about -13 V. Under forward bias
two obvious emission peaks at ultraviolet (UV) and visible regions were detected. By comparing with the PL spectra of ZnO and SiC
the origin of the UV and visible emission peaks was confirmed from the radiative recombination of ZnO side.
As掺杂p-ZnO/n-SiC电致发光金属有机化学汽相沉积
As-dopingp-ZnO/n-SiCELMOCVD
Zimmler M, Voss T, Ronning C, et al. Exciton-related electroluminescence from ZnO nanowire light-emitting diodes [J]. Appl. Phys. Lett., 2009, 94(24):241120-1-3.[2] Zhao Long, Yin Wei, Xia Xiaochuan, et al. As-doped p-type ZnMgO films grown by MOCVD [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1020-1023 (in Chinese).[3] Tan S T, Sun X W, Zhao J L, et al. Ultraviolet and visible electroluminescence from n-ZnO/SiO2/(n,p)-Si heterostructured light-emitting diodes [J]. Appl. Phys. Lett., 2008, 93(1):013506-1-3.[4] Chu S, Olmedo M, Yang Z, et al. Electrically pumped ultraviolet ZnO diode lasers on Si [J]. Appl. Phys. Lett., 2008, 93(18):181106-1-3.[5] Yuan G D, Ye Z Z, Zhu L P, et al. Control of conduction type in Al-and N-codoped ZnO thin film [J]. Appl. Phys. Lett., 2005, 86(20):202106-1-3.[6] Su Shichen, Lv Youming. Ultraviolet electroluminescence of ZnMgO/n-ZnO/ZnMgO/p-GaN heterojunction light emitting diode [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):821-824 (in Chinese).[7] Wang J Z, Du G T, Zhang B J, et al. Epitaxial growth of NH3-doped ZnO thin films on 〈022 4〉 oriented sapphire substrates [J]. J. Cryst. Growth, 2003, 255:293-297.[8] Minegishi K, Koiwai Y, Kikuchi Y, et al. Growth of p-type zinc oxide films by chemical vapor deposition [J]. Jpn. J. Appl. Phys., 1997, 36(2):L1453-L1455.[9] Yang Y, Sun X W, Tay B K, et al. A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation [J]. Appl. Phys. Lett., 2008, 93(25):2531076-1-3.[10] Sun J C, Zhao J Z, Liang H W, et al. Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO:As/GaAs structure [J]. Appl. Phys. Lett., 2007, 90(12):121128-1-3.[11] Alivov Y, Xiao B, Fan Q, et al. Band offset measurements of ZnO/6H-SiC heterostructure system [J]. Appl. Phys. Lett., 2006, 89(15):152115-1-3.[12] Ashrafi A. Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment [J]. Surface Science, 2010, 604(21-22):L63-L66.[13] Mofor A, Bakin A, Chejarla U, et al. Fabrication of ZnO nanorod-based p-n heterojunction on SiC substrate [J]. Superlattices and Microstructures, 2007, 42(15):415-420.[14] Yuen C, Yu S F, Lau S P, et al. Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique [J]. Appl. Phys. Lett., 2006, 86(24):241111-1-3.[15] Kim J B, Byun D, Ie S Y, et al. Cu-doped ZnO-based p-n hetero-junction light emitting diode [J]. Semicond. Sci. Technol., 2008, 23(9):095004-1-6.[16] Liang H W, Feng Q J, Sun J C, et al. Room temperature electroluminescence from the ZnO homojunction grown on an n+-Si substrate by metal-organic chemical vapor deposition [J]. Semicond. Sci. Technol., 2008, 23(08):025014-1-4.[17] Xu W Z, Ye Z Z, Zeng Y J, et al. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition [J]. Appl. Phys. Lett., 2006, 88(17):173506-1-3.[18] Bayram C, Teherani F H, Rogers D J, et al. A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN)multi-quantum-wells/p-GaN [J]. Appl. Phys. Lett., 2008, 93(8):08111-1-3.[19] Wang J Y, Lee C Y, Chen Y T, et al. Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions [J]. Appl. Phys. Lett., 2009, 95(13):131117-1-3.
0
浏览量
39
下载量
1
CSCD
关联资源
相关文章
相关作者
相关机构