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内蒙古工业大学理学院 物理系, 内蒙古 呼和浩特 010051
纸质出版日期:2012-5-10,
网络出版日期:2012-5-10,
收稿日期:2012-2-12,
修回日期:2012-3-28,
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刘贺, 温淑敏, 赵春旺, 哈斯花. 压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(5): 492-498
LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers[J]. Chinese Journal of Luminescence, 2012,(5): 492-498
刘贺, 温淑敏, 赵春旺, 哈斯花. 压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(5): 492-498 DOI: 10.3788/fgxb20123305.0492.
LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers[J]. Chinese Journal of Luminescence, 2012,(5): 492-498 DOI: 10.3788/fgxb20123305.0492.
对GaAs/Al
x
Ga
1-
x
As和GaN/Al
x
Ga
1-
x
N无限深量子阱系统
考虑压力及屏蔽效应
利用变分方法数值计算这两种系统中的杂质态结合能。给出了结合能随阱宽和压力的变化关系
同时讨论了有无屏蔽时的区别。结果表明
结合能随压力增大而增大
随阱宽增大而减小;屏蔽效应随着压力的增加而增加
并且显著降低了杂质态的结合能。
Under the effects of hydrostatic pressure and screening on the infinite GaAs/Al
x
Ga
1-
x
As and GaN/Al
x
Ga
1-
x
N quantum wells
the binding energies of the impurity are calculated by the variational method in the two systems. The impurity binding energies as functions of the well width and pressure are given. The result indicates that the binding energy increases with pressure
but decreases with well width. We also discussed the binding energies of impurity with and without the screening effects. It is found that the screening effect became stronger as pressure increases
and then decreases the binding energy of impurity significantly.
量子阱压力屏蔽结合能
quantum wellpressurescreeningbinding energy
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