ZnO/ZnMgO异质结场效应管的制备与性能研究

朱振邦; 顾书林; 朱顺明; 叶建东; 黄时敏; 顾然; 郑有炓

doi:10.3788/fgxb20123304.0449

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ZnO/ZnMgO异质结场效应管的制备与性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- ZnO/ZnMgO异质结场效应管的制备与性能研究
- Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor
- 发光学报 2012年33卷第4期页码：449-452
- 作者机构：
  
  南京大学电子科学与工程学院和南京微结构国家实验室,江苏南京,210093
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61025020,60990312)();国家"();973"();计划项目(2011CB302003)();江苏省自然科学基金(SB
- DOI：10.3788/fgxb20123304.0449
  中图分类号： TN386
- 纸质出版日期：2012-4-10，
  
  网络出版日期：2012-4-10，
  
  收稿日期：2011-12-7，
  
  修回日期：2012-2-17，
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朱振邦, 顾书林, 朱顺明, 叶建东, 黄时敏, 顾然, 郑有炓. ZnO/ZnMgO异质结场效应管的制备与性能研究[J]. 发光学报, 2012,33(4): 449-452

ZHU Zhen-bang, GU Shu-lin, ZHU Shun-ming, YE Jian-dong, HUANG Shi-min, GU Ran, ZHENG You-dou. Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor[J]. Chinese Journal of Luminescence, 2012,33(4): 449-452
朱振邦, 顾书林, 朱顺明, 叶建东, 黄时敏, 顾然, 郑有炓. ZnO/ZnMgO异质结场效应管的制备与性能研究[J]. 发光学报, 2012,33(4): 449-452 DOI： 10.3788/fgxb20123304.0449.

ZHU Zhen-bang, GU Shu-lin, ZHU Shun-ming, YE Jian-dong, HUANG Shi-min, GU Ran, ZHENG You-dou. Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor[J]. Chinese Journal of Luminescence, 2012,33(4): 449-452 DOI： 10.3788/fgxb20123304.0449.

摘要

利用等离子体增强化学气相沉积(PECVD)技术

在ZnO/ZnMgO异质结构上制备SiO

作为栅绝缘层

采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下

栅绝缘层产生钝化

从而能够改善器件的性能。

Abstract

The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor (HFET) were reported in this paper. The HFET was grown on

-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) technology

and was fabricated by a conventional photolithography technique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 Smm

-1

and mobility of 182 cm

-1

at room temperature. The property was limited by leakage current through the SiO

gate insulator. At low temperature

the performance was improved due to the reduced leakage current.

关键词

ZnO/ZnMgO异质结场效应管迁移率

Keywords

ZnO/ZnMgOheterostructure field-effect transistor(HFET)mobility

references

Hoffman R L, Norris B J, Wager J T. ZnO-based transparent thin-film transistors [J]. Appl. Phys. Lett., 2003, 82(5):733-735.[2] Masuda S, Kitamura K, Okumura Y, et al. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties [J]. J. Appl. Phys., 2003, 93(3):1624-1630.[3] Ye J D, Pannirselvam S, Lim S T, et al. Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy [J]. Appl. Phys. Lett., 2010, 97(11):111908-1-3.[4] Sasa S, Ozaki M, Koike K, et al. High-performance ZnO/ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure [J]. Appl. Phys. Lett., 2006, 89(5):53502-1-3.[5] Joseph F, Denis M, Yusuke K, et al. Magnesium doping controlled density and mobility of two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures [J]. Appl. Phys. Express, 2011, 4(9):091101-1-3.[6] Tsukazaki A, Ohtomo A, Kita T, et al. Quantum Hall effect in polar oxide heterostructures [J]. Science, 2007, 315(5817):1388-1391.[7] Tsukazaki A, Akasaka S, Nakahara K, et al. Observation of the fractional quantum Hall effect in an oxide [J]. Nat. Mater., 2010, 9(11):889-893.[8] Liu Bingce, Liu Cihui, Sun Lijie, et al. Influence of ZnO microstructure variation on its photoelectricity characteristics [J]. Chin. J. Lumin.(发光学报), 2010, 31(2):194-198 (in Chinese).[9] Jogai B. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors [J]. J. Appl. Phys., 2003, 93(3):1631-1635.[10] Chen Hui, Gu Shulin, Zhu Shunmin. Influence of different substrate and pressure on growth and properties of ZnMgO films [J]. Chin. J. Lumin.(发光学报), 2011, 32(5):482-486 (in Chinese).[11] Su Shichen, Lv Youming. Ultraviolet electroluminescence of ZnMgO/nZnO/ZnMgO/pGaN heterojunction light emitting diode [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):821-824 (in Chinese).

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