H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响

叶展通; 朱德亮; 马晓翠; 吕有明; 柳文军; 曹培江; 贾芳

doi:10.3788/fgxb20123304.0417

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H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响
- Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films
- 发光学报 2012年33卷第4期页码：417-421
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976036)();广东省千百十工程项目();深圳市科技计划项目();深圳市特种功能材料重点实验室开放基金(T0901,T201101)资助项目()
- DOI：10.3788/fgxb20123304.0417
  中图分类号： O484.4
- 纸质出版日期：2012-4-10，
  
  网络出版日期：2012-4-10，
  
  收稿日期：2012-1-17，
  
  修回日期：2012-2-21，
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叶展通, 朱德亮, 马晓翠, 吕有明, 柳文军, 曹培江, 贾芳. H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响[J]. 发光学报, 2012,33(4): 417-421

YE Zhan-tong, ZHU De-liang, MA Xiao-cui, LV You-ming, LIU Wen-jun, CAO Pei-jiang, JIA Fang. Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films[J]. Chinese Journal of Luminescence, 2012,33(4): 417-421
叶展通, 朱德亮, 马晓翠, 吕有明, 柳文军, 曹培江, 贾芳. H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响[J]. 发光学报, 2012,33(4): 417-421 DOI： 10.3788/fgxb20123304.0417.

YE Zhan-tong, ZHU De-liang, MA Xiao-cui, LV You-ming, LIU Wen-jun, CAO Pei-jiang, JIA Fang. Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films[J]. Chinese Journal of Luminescence, 2012,33(4): 417-421 DOI： 10.3788/fgxb20123304.0417.

摘要

利用磁控溅射法

采用亚分子分层掺杂技术交替溅射Co靶和ZnO靶

在Si衬底上制备了不同氢氩流量比的H:ZCO薄膜样品

研究了氢氩流量比对薄膜结构特性和磁学性能的影响。所制备的薄膜样品具有

轴择优取向。由于H对表面和界面处悬挂键的钝化作用

随H

流量比的增加

薄膜的择优取向变差。磁性测量结果显示

薄膜样品的铁磁性随着氢氩流量比的增大而增强。XPS结果表明

随着H含量的增大

金属态Co团簇的相对含量逐渐增加

而氧化态Co离子的相对含量逐渐减小。H:ZCO样品中的铁磁性可能来源于Co金属团簇

H的掺入促使ZnO中的Co离子还原成Co金属团簇

从而增强了薄膜样品的室温铁磁性。

Abstract

H:ZCO thin films were prepared with different

(Ar+H

) by using submolecule doping technique

where the magnetic sputtering of Co and ZnO were alternatively performed onto silicon substrates. The effect of

(Ar+H

) on the structural and magnetic properties in films was investigated. All the prepared thin films have a

-axis preferential orientation

and the intensity of (002) diffraction peak decreases with the increase of

(Ar+H

) in films because the doping hydrogen can passivate the dangling bonds at the surfaces and grain boundaries. Magnetic measurement shows that the ferromagnetism is enhanced with the

(Ar+H

) increasing. XPS results exhibit that the relative content of Co metal clusters gradually increases

and the relative content of oxidized Co ions gradually decreases with the increase of H

ratio. According to the above results

it is suggested that the ferromagnetism in H:ZCO thin film originates from Co metal clusters

and more oxidized Co ions is reduced to Co metal clusters with H

doping

therefore the ferromagnetism is enhanced.

关键词

磁控溅射法ZnCoO稀磁半导体H掺杂Co金属团簇

Keywords

magnetron sputtering methodZnCoO diluted magnetic semiconductorH dopingCo metal clusters

references

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