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1. 上海大学 材料科学与工程学院 上海,200444
2. 上海大学 新型显示技术与应用集成教育部重点实验室 上海,200072
纸质出版日期:2012-4-10,
网络出版日期:2012-4-10,
收稿日期:2011-12-19,
修回日期:2012-2-16,
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李俊, 周帆, 林华平, 张浩, 张建华, 蒋雪茵, 张志林. N<sub>2</sub>O Plasma表面处理对SiN<sub><em>x</em></sub>基IGZO-TFT性能的影响[J]. 发光学报, 2012,33(4): 400-403
LI Jun, ZHOU Fan, LIN Hua-ping, ZHANG Hao, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. Effect of N<sub>2</sub>O Plasma Treatment on The SiN<sub><em>x</em></sub>-based InGaZnO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2012,33(4): 400-403
李俊, 周帆, 林华平, 张浩, 张建华, 蒋雪茵, 张志林. N<sub>2</sub>O Plasma表面处理对SiN<sub><em>x</em></sub>基IGZO-TFT性能的影响[J]. 发光学报, 2012,33(4): 400-403 DOI: 10.3788/fgxb20123304.0400.
LI Jun, ZHOU Fan, LIN Hua-ping, ZHANG Hao, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. Effect of N<sub>2</sub>O Plasma Treatment on The SiN<sub><em>x</em></sub>-based InGaZnO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2012,33(4): 400-403 DOI: 10.3788/fgxb20123304.0400.
采用N
2
O plasma处理SiN
x
薄膜作为绝缘层
以室温下沉积的铟镓锌氧化物(IGZO)作为有源层制备了 IGZO薄膜晶体管。与常规的IGZO-TFT相比
N
2
O plasma处理过的IGZO-TFT的迁移率由原来的4.5 cm
2
V
-1
s
-1
增 加至8.1 cm
2
V
-1
s
-1
阈值电压由原来的11.5 V减小至3.2 V
亚阈值摆由原来的1.25 V/decade减小至0.9 V/decade。采用
C-V
方法计算了两种器件的陷阱态
结果发现N
2
O plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFT的陷阱态
表明N
2
O plasma处理SiN
x
绝缘层是一种改善IGZO-TFT器件性能的有效方法。
ndium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N
2
O plasma treated SiN
x
film as gate insulator and room-temperature deposited IGZO film as active layer. Comparing with the conventional IGZO-TFT
the saturation mobility increased from 4.5 to 8.1 cm
2
V
-1
s
-1
threshold voltage reduced from 11.5 to 3.2 V
threshold swing varied from 1.25 to 0.9 V/dec. The trap states in the N
2
O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT. Our results indicate that using N
2
O plasma treated SiN
x
film as gate insulator is an effective approach for improving IGZO-TFT performance.
薄膜晶体管InGaZnOplasma处理N2O
thin-film transistorInGaZnOplasma treatmentN2O
Chiu C J, Chang S P, Chang S J. High-performance a-IGZO thin-film transistor using Ta2O5 gate dielectric [J]. IEEE Electron Device Lett., 2010, 31(11):1245-1247.[2] Kim C J, Kim S, Lee J H, et al. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors [J]. Appl. Phys. Lett., 2009, 95(25):252103-1-3.[3] Kang D, Lim H, Kim C, et al. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J]. Appl. Phys. Lett., 2007, 90(19):192101-1-3.[4] Yabuta H, Sano M, Abe K, et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J]. Appl. Phys. Lett., 2006, 89(11):112123-1-3.[5] Kim Jonghoon, Ahn Byungdu, Lee Choonghee, et al. Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes [J]. Thin Solid Films, 2008, 516(7):1529-1533.[6] Zhou Fan, Zhang Liang, Li Jun, et al. Effect of Ta2O5 thickness on the performances of ZnO-based thin film transistors [J]. Chin. J. Lumin.(发光学报), 2011, 32(2):188-193 (in English).[7] Navamathavan R, Nirmala R, Lee C R, et al. Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors [J]. Vacuum, 2011, 85(9):904-907.[8] Martins R, Barquinha P, Ferreira I, et al. Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors [J]. J. Appl. Phys., 2007, 101(4):044505-1-7.[9] Ma Ziguang, Wang Wenxin, Wang Xiaoli, et al. The optical and electrical properties of GaN epitaxial films with SiNx interlayers inserted at different position [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1014-1019 (in Chinese).
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