氧化镓微晶薄膜制备及其日盲深紫外探测器

赖黎; 莫慧兰; 符思婕; 毛彦琦; 王加恒; 范嗣强

doi:10.37188/fgxb20204109.1165

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氧化镓微晶薄膜制备及其日盲深紫外探测器

器件制备及器件物理 | 更新时间：2020-09-10

- 氧化镓微晶薄膜制备及其日盲深紫外探测器
- Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector
- 发光学报 2020年41卷第9期页码：1165-1171
- 作者机构：
  
  1.重庆师范大学物理与电子工程学院光电功能材料重庆市重点实验室, 重庆 401331
- 作者简介：
  
  [ "赖黎(1997-), 女, 四川绵阳人, 在读本科生, 主要从事宽带隙半导体材料与器件的研究。E-mail:759979502@qq.com" ]
  [ "范嗣强(1978-), 男, 四川资阳人, 博士, 高级实验师, 2015年于重庆大学获得博士学位, 主要从事光电单元器件方面的研究。E-mail:mikefan111@163.com" ]
- 基金信息：
  
  国家自然科学基金(11904041);重庆市教委科学技术研究项目(KJQN201900542);重庆市教委科学技术研究项目(KJ160031)
- DOI：10.37188/fgxb20204109.1165
  中图分类号：
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赖黎, 莫慧兰, 符思婕, 等. 氧化镓微晶薄膜制备及其日盲深紫外探测器[J]. 发光学报, 2020,41(9):1165-1171.

Li LAI, Hui-lan MO, Si-jie FU, et al. Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector[J]. Chinese Journal of Luminescence, 2020,41(9):1165-1171.
赖黎, 莫慧兰, 符思婕, 等. 氧化镓微晶薄膜制备及其日盲深紫外探测器[J]. 发光学报, 2020,41(9):1165-1171. DOI： 10.37188/fgxb20204109.1165.

Li LAI, Hui-lan MO, Si-jie FU, et al. Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector[J]. Chinese Journal of Luminescence, 2020,41(9):1165-1171. DOI： 10.37188/fgxb20204109.1165.

摘要

采用射频磁控溅射技术和热退火技术在石英衬底上制备了微晶态Ga,2,O,3,薄膜。利用X射线衍射仪（XRD）、拉曼光谱（Raman）、紫外-可见-红外分光光度计（UV-Vis-IR）以及X射线光电子能谱仪（XPS）等手段对薄膜结构、光学特性以及化学组分进行了系统研究。结果表明，制备的Ga,2,O,3,薄膜呈非晶态，退火处理后，薄膜由非晶态转变为含β相Ga,2,O,3,的微晶薄膜，随退火温度升高，薄膜内部微晶成分不断增加，但最终在石英衬底上制备的薄膜并未全部转换成全晶态薄膜（β-Ga,2,O,3,）。基于非晶和微晶Ga,2,O,3,薄膜制备了金属-半导体-金属（MSM）结构的日盲深紫外探测器，发现非晶Ga,2,O,3,薄膜基器件表现出更高的光响应，而微晶Ga,2,O,3,薄膜基器件则具有更低的暗电流和更快的响应速度。

Abstract

Microcrystalline Ga,2,O,3, thin films were prepared on quartz substrates by radio frequency magnetron sputtering technology and thermal annealing technology. Using X-ray diffractometer(XRD), Raman spectroscopy, ultraviolet-visible-infrared spectrophotometer(UV-Vis-IR) and X-ray photoelectron spectrometer(XPS), the structure, optical properties and the chemical components were systematically studied. The results show that the prepared Ga,2,O,3, film is amorphous. After the post-annealing process, all the films are changed from amorphous to microcrystalline films containing β-phase Ga,2,O,3,. With the rising of annealing temperature, the microcrystalline composition inside the film continues to increase. However, not all the thin films prepared on the quartz substrate were converted into fully crystalline thin films(β-Ga,2,O,3,). Based on amorphous and microcrystalline Ga,2,O,3, thin films, metal-semiconductor-metal(MSM) structured solar blind deep ultraviolet photodetectors were fabricated. It was found that amorphous Ga,2,O,3, thin film-based device shows higher optical response, while microcrystalline Ga,2,O,3, thin film-based device shows lower dark current and faster response speed.

关键词

氧化镓微晶光电性能日盲紫外探测器

Keywords

gallium oxidemicrocrystallinephotoelectric performanceolar blind UV photodetector

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