“Researchers have made significant progress in the field of semiconductor materials, successfully producing a large quantity of high-quality InP nanowires and nanopillars. The nanowires, with diameters between 30 and 65 nm and a film thickness of approximately 35 μm, and nanopillars, with diameters ranging from 550 to 850 nm and a film thickness of about 12 μm, were created using chemical vapor deposition and in-situ growth methods. The study also explored the growth mechanisms of the nanomaterials, with nanowires following the vapor-liquid-solid and nanopillars the solid-liquid-solid mechanism, offering new opportunities for the controlled preparation and large-scale production of InP nanomaterials.”