基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究

王伟; 杨舒婷; 汪雅欣; 王宇轩; 王茹; 于庆南

doi:10.37188/CJL.20230249

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基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究

更新时间：2023-11-20

- 基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究
  增强出版
- Experimental Study of Emission Scaling Factor Based on InGaAs/GaAs Quantum Well Structure
- 发光学报 2023年页码：1-7
- 作者机构：
  
  1.无锡学院江苏省集成电路可靠性技术及检测系统工程研究中心，江苏无锡　214105
- 作者简介：
  
  [ "王伟（1984-），男，江苏泰兴人，博士研究生，高级工程师，2012年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事半导体光电子学、半导体激光器及可靠性方面的研究。E-mail： 860009@cwxu.edu.cn" ]
  [ "于庆南（1990-），男，山东济宁人，博士研究生，讲师，硕士生导师，2020年于北京航空航天大学获得博士学位，主要从事InGaAs半导体结构的超宽调谐特性和双频激射特性研究。E-mail: qnyu@cwxu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金项目(62204172);“锡山英才计划”高校创新领军人才项目(2023xsyc002);江苏省高等学校基础科学（自然科学）研究项目(22KJB140016);江苏省双创博士项目(JSSCBS20210870;JSSCBS20210868);南京信息工程大学滨江学院人才启动经费(550221009;550221036)
- DOI：10.37188/CJL.20230249
  中图分类号：
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王伟,杨舒婷,汪雅欣等.基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究[J].发光学报,

WANG Wei,YANG Shuting,WANG Yaxin,et al.Experimental Study of Emission Scaling Factor Based on InGaAs/GaAs Quantum Well Structure[J].Chinese Journal of Luminescence,
王伟,杨舒婷,汪雅欣等.基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究[J].发光学报, DOI：10.37188/CJL.20230249

WANG Wei,YANG Shuting,WANG Yaxin,et al.Experimental Study of Emission Scaling Factor Based on InGaAs/GaAs Quantum Well Structure[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20230249

摘要

辐射标定因子作为半导体激光器的重要物理参数，在揭示器件性能方面一直扮演着重要角色。本文提出了一种测量辐射标定因子的实验方法，利用这一方法开展了对980nm InGaAs/GaAs量子阱结构的辐射特性研究。该方法通过收集InGaAs/GaAs边发射结构两侧辐射的光致发光（PL）光谱，利用构建的理论公式，获得了该结构在不同注入载流子浓度下的辐射标定因子，均值波动范围约为7.16×10,10 ,~ 3.36×10,11 ,W,-1,·eV,-1,·s,-1,。最后利用固体模型理论和载流子填充规律对该结果进行了分析，揭示了该结构在不同热平衡状态下的非平衡载流子能带填充水平，以及电子和空穴准费米能级的变化规律。该项研究提出了一种测量辐射标定因子的新方法，在揭示发光材料辐射机制和推动激光器发展方面具有重要研究价值。

Abstract

InGaAs/GaAs semiconductor lasers have shown great application potential in many fields with their excellent optical properties. The emission scaling factor is an important physical parameter in assessing and revealing semiconductor laser performance. In this paper， a novel experimental measurement approach of emission scaling factor for 980nm InGaAs/GaAs quantum well structures is proposed and described， which is used to reveal and analyze the carried-injected band-filling effect and radiation characteristics of semiconductor lasers. In this paper， the theoretical formula between photoluminescence （PL） spectra and emission scaling factor of InGaAs/GaAs quantum well structures are established. In this method， the PL spectra emitted from the dual facets of InGaAs/GaAs edge-emitting laser structure are collected at room temperature 300K， which is pumped by 808nm fiber coupled lasers. The emission scaling factors of InGaAs/GaAs structure are obtained with the various carrier densities of 9.0×10,17,cm,-3,，9.2×10,17,cm,-3,，9.4×10,17,cm,-3,and9.6×10,17,cm,-3,.The measurement results show that the emission scaling factor has an almost uniform distribution under the same thermal equilibrium state. In addition， the factors gradually increase to 7.98×10,10, W,-1,·eV,-1,·s,-1,， 1.68×10,11, W,-1,·eV,-1,·s,-1,， 2.65×10,11, W,-1,·eV,-1,·s,-1, and 3.36×10,11, W,-1,·eV,-1,·s,-1, with the rise of carrier densities. This is because the band-filling levels of electrons and holes gradually increases as the carrier densities increase， which lead to the separation of the quasi-Fermi levels of electrons（,E,Fn,） and holes（,E,Fp,） and a move to conduction band and valence band， respectively. The Fermi level represents the boundary between quantum states that are basically occupied or empty. Therefore， the quantum state within the quasi-Fermi energy spacing is basically filled by carriers， and the quantum state larger than that is basically empty. This causes the emission scaling factor to gradually decrease at the quasi-Fermi energy spacing. The great significance of this work lies in that not only can it propose a novel experimental method for the emission scaling factor， but also reveal the energy filling levels of non-equilibrium carrier under different thermal equilibrium states. This study has important research value for revealing the radiation mechanism and promoting the development of semiconductor lasers.

关键词

InGaAs/GaAs辐射标定因子光致发光光谱能带填充水平

Keywords

InGaAs/GaAsemission scaling factorphotoluminescence spectraband-filling effect

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