浏览全部资源
扫码关注微信
基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能
增强出版Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses
- 发光学报 2022年43卷第4期 页码：501-508
- 作者机构：
福州大学 物理与信息工程学院，福建 福州 350108
- 作者简介：
[ "陈祥(1997-)，男，河南驻马店人，硕士研究生，2019年于泉州师范学院获得学士学位，主要从事磷化铟量子点合成及其发光二极管制备的研究。E-mail: 466956846@qq.com" ]
[ "李福山(1978-)，男，福建莆田人，博士，研究员，博士生导师，2005 年于北京大学获得博士学位，主要从事纳米光电材料与器件的研究。 E-mail: fsli@fzu.edu.cn" ]
- 基金信息：国家自然科学基金(62075043)
DOI：10.37188/CJL.20220034
中图分类号： O482.31纸质出版日期：2022-04-01，
收稿日期：2022-01-24，
修回日期：2022-02-11，
扫 描 看 全 文
陈祥, 赵浩兵, 罗芷琪, 等. 基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能[J]. 发光学报, 2022,43(4):501-508.
Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses[J]. Chinese Journal of Luminescence, 2022,43(4):501-508.
陈祥, 赵浩兵, 罗芷琪, 等. 基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能[J]. 发光学报, 2022,43(4):501-508. DOI： 10.37188/CJL.20220034.
Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses[J]. Chinese Journal of Luminescence, 2022,43(4):501-508. DOI： 10.37188/CJL.20220034.
摘要
磷化铟(InP)量子点(QDs)由于其不含重金属元素和出色的光电特性，在量子点发光二极管(QLED)领域引起了广泛关注。本文以ZnSe和ZnS作为壳层来制备绿色InP/ZnSe/ZnS QDs，通过调控ZnSe壳层的厚度得到不同发光性能的QDs。当Se粉与Zn(St)
2
的质量比为1∶15时，InP/ZnSe/ZnS QDs的荧光发射峰为522 nm，半峰宽为45 nm，荧光量子效率高达86%。同时制备了基于不同ZnSe壳层厚度的QLED，并利用真空蒸发的方式去除QDs薄膜中残留的有机溶剂，避免了高温退火对QDs性能的破坏，最终得到稳定工作QLED器件，其最佳外量子效率为2.2%。
Abstract
Indium phosphide(InP) quantum dots(QDs) have drawn much attention in quantum dots light-emitting diodes(QLED) owing to their heavy-metal-free components and outstanding optics and electricity properties. In this paper
green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers
QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer. When the mass ratio of Se powder to Zn(St)
2
is 1∶15
the PL peak of InP/ZnSe/ZnS QDs is 522 nm
the half-peak width is 45 nm and the PLQY is as high as 86%. QLED based on different thicknesses of ZnSe shell layers was prepared
the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing
and the best EQE of 2.2% was obtained for the QLED devices.
关键词
磷化铟量子点荧光量子效率发光二极管
Keywords
indium phosphide quantum dotsfluorescence quantum efficiencylight emitting diode
references
KIM T, KIM K H, KIM S, et al. Efficient and stable blue quantum dot light-emitting diode [J]. Nature, 2020, 586(7829):385-389.
CORREA-BAENA J P, ABATE A, SALIBA M, et al. The rapid evolution of highly efficient perovskite solar cells [J]. Energy Environ. Sci., 2017, 10(3):710-727.
LIU Y, ZHENG Y H, ZHU Y B, et al. Unclonable perovskite fluorescent dots with fingerprint pattern for multilevel anticounterfeiting [J]. ACS Appl. Mater. Interfaces, 2020, 12(35):39649-39656.
SHEN H B, GAO Q, ZHANG Y B, et al. Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency [J]. Nat. Photonics, 2019, 13(3):192-197.
湛志华, 陈茺而, 莫大幸, 等. 单激发双发射近红外荧光碳量子点制备、荧光性能与细胞成像 [J]. 发光学报, 2021, 42(8):1307-1313.
ZHAN Z H, CHEN C E, MO D X, et al. Preparation,fluorescent properties and cell imaging of near infrared fluorescent carbon quantum dots with single excited double emission [J]. Chin. J. Lumin., 2021, 42(8):1307-1313. (in Chinese)
WON Y H, CHO O, KIM T, et al. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes [J]. Nature, 2019, 575(7784):634-638.
CAO F, WANG S, WANG F J, et al. A layer-by-layer growth strategy for large-size InP/ZnSe/ZnS core-shell quantum dots enabling high-efficiency light-emitting diodes [J]. Chem. Mater., 2018, 30(21):8002-8007.
PENG X D, YAN C, CHUN F J, et al. A review of low-dimensional metal halide perovskites for blue light emitting diodes [J]. J. Alloys Compd., 2021, 883:160727.
XIAO Z X, PENG M, MEI Y C, et al. Effect of organosilicone and mineral silicon fertilizers on chemical forms of cadmium and lead in soil and their accumulation in rice [J]. Environ. Pollut., 2021, 283:117107.
KIM T G, ZHEREBETSKYY D, BEKENSTEIN Y, et al. Trap passivation in indium-based quantum dots through surface fluorination:mechanism and applications [J]. ACS Nano, 2018, 12(11):11529-11540.
ZHANG H, MA X Y, LIN Q L, et al. High-brightness blue InP quantum dot-based electroluminescent devices:the role of shell thickness [J]. J. Phys. Chem. Lett., 2020, 11(3):960-967.
ZHANG W D, DING S H, ZHUANG W D, et al. InP/ZnS/ZnS core/shell blue quantum dots for efficient light-emitting diodes [J]. Adv. Funct. Mater., 2020, 30(49):2005303-1-9.
WU Z H, LIU P, ZHANG W D, et al. Development of InP quantum dot-based light-emitting diodes [J]. ACS Energy Lett., 2020, 5(4):1095-1106.
WEI J X, HU Z, ZHOU W J, et al. Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes [J]. J. Colloid Interface Sci., 2021, 602:307-315.
PELAYO-CEJA J E, ZAZUETA-RAYNAUD A, LOPEZ-DELGADO R, et al. Anomalous Stokes shift of colloidal quantum dots and their influence on solar cell performance [J]. Microsyst. Technol., 2019, doi: 10.1007/s00542-019-04603-zhttp://doi.org/10.1007/s00542-019-04603-z.
胡炼, 吴惠桢. 退火对CdSe量子点荧光影响的色度学研究 [J]. 发光学报, 2015, 36(6):610-616.
HU L, WU H Z. Colorimetric study of annealing effect on fluorescence performance of CdSe quantum dots [J]. Chin. J. Lumin., 2015, 36(6):610-616. (in Chinese)
陈肖慧, 袁曦, 华杰, 等. 壳层相关的CdSe核/壳量子点发光的热稳定性 [J]. 发光学报, 2014, 35(9):1051-1057.
CHEN X H, YUAN X, HUA J, et al. Shell-dependent thermal stability of CdSe core/shell quantum dot photoluminescence [J]. Chin. J. Lumin., 2014, 35(9):1051-1057. (in Chinese)
SHIN D W, SUH Y H, LEE S, et al. Waterproof flexible InP@ZnSeS quantum dot light-emitting diode [J]. Adv. Opt. Mater., 2020, 8(6):1901362-1-7.
WANG Y C, CHEN Z J, WANG T, et al. Efficient structure for InP/ZnS-based electroluminescence device by embedding the emitters in the electron-dominating interface [J]. J. Phys. Chem. Lett., 2020, 11(5):1835-1839.
LEE T, HAHM D, KIM K, et al. Highly efficient and bright inverted top-emitting InP quantum dot light-emitting diodes introducing a hole-suppressing interlayer [J]. Small, 2019, 15(50):1905162-1-7.
LI Y, HOU X Q, DAI X L, et al. Stoichiometry-controlled InP-based quantum dots:synthesis,photoluminescence,and electroluminescence [J]. J. Am. Chem. Soc., 2019, 141(16):6448-6452.
LAUFERSKY G, BRADLEY S, FRÉCAUT E, et al. Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses [J]. Nanoscale, 2018, 10(18):8752-8762.
HENS Z, MARTINS J C. A solution NMR toolbox for characterizing the surface chemistry of colloidal nanocrystals [J]. Chem. Mater., 2013, 25(8):1211-1221.
0
浏览量
126
下载量
1
CSCD
- 网络PDF下载
- Meta-XML下载
- BibTeX下载
- Endnote下载
- RefMan 下载
- NoteExpress下载
- NoteFirst下载
关联资源
相关文章
相关作者
相关机构
- 地址：长春市经济技术开发区东南湖大路3888号 邮编：130033
- 联系电话：0431-86176862 Email：fgxbt@126.com
- 本系统由Light学术出版中心、北京北大方正电子有限公司共建 吉ICP备11002662号-17
京公网安备11010802024621 - 本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
- Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies
