复合成核层对InGaN基黄光LED内量子效率的影响

宫丽艳; 唐斌; 胡红坡; 赵晓宇; 周圣军

doi:10.37188/CJL.20210286

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复合成核层对InGaN基黄光LED内量子效率的影响

器件制备及器件物理 | 更新时间：2021-12-17

- 复合成核层对InGaN基黄光LED内量子效率的影响
  增强出版
- Effect of Hybrid Nucleation Layer on Internal Quantum Efficiency of InGaN-based Yellow LEDs
- 发光学报 2021年42卷第12期页码：1914-1920
- 作者机构：
  
  武汉大学　动力与机械学院，湖北　武汉　430072
- 作者简介：
  
  [ "宫丽艳(1996-)，女，山东烟台人，硕士研究生，2019年于华中农业大学获得学士学位，主要从事GaN基LED芯片和先进电子制造等方面的研究。E-mail: 2019202080016@whu.edu.cn" ]
  [ "周圣军(1983-)，男，湖北天门人，博士，教授，博士研究生导师，2011年于上海交通大学获得博士学位，主要从事GaN基LED芯片和先进电子制造等方面的研究。E-mail: zhousj@whu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(52075394;51775387;51675386);国家“万人计划”青年拔尖人才支持计划
- DOI：10.37188/CJL.20210286
  中图分类号： TN312.8
- 纸质出版日期：2021-12，
  
  收稿日期：2021-08-27，
  
  修回日期：2021-09-09，
- 稿件说明：
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宫丽艳, 唐斌, 胡红坡, 等. 复合成核层对InGaN基黄光LED内量子效率的影响[J]. 发光学报, 2021,42(12):1914-1920.

LI-YAN GONG, BIN TANG, HONG-PO HU, et al. Effect of Hybrid Nucleation Layer on Internal Quantum Efficiency of InGaN-based Yellow LEDs. [J]. Chinese journal of luminescence, 2021, 42(12): 1914-1920.
宫丽艳, 唐斌, 胡红坡, 等. 复合成核层对InGaN基黄光LED内量子效率的影响[J]. 发光学报, 2021,42(12):1914-1920. DOI： 10.37188/CJL.20210286.

LI-YAN GONG, BIN TANG, HONG-PO HU, et al. Effect of Hybrid Nucleation Layer on Internal Quantum Efficiency of InGaN-based Yellow LEDs. [J]. Chinese journal of luminescence, 2021, 42(12): 1914-1920. DOI： 10.37188/CJL.20210286.

摘要

开发了一种由溅射AlN层和中温GaN层组成的复合成核层来提高黄光LED的内量子效率。系统地研究了在溅射AlN成核层和复合成核层上生长的InGaN基黄光LED的晶体质量和光学性能，揭示了复合成核层对黄光LED内量子效率的影响机制。分别采用透射电子显微镜、X射线衍射、拉曼光谱、变温光致发光谱和电致发光谱对黄光LED进行表征分析。结果发现，复合成核层能够诱导产生堆垛层错，可以有效降低外延层中的位错密度和残余应力。在溅射AlN成核层和复合成核层上生长的黄光LED外延层中的位错密度分别为5.04×10

-2

和3.98×10

-2

，压应力分别为482.71 MPa和266.38 MPa。通过变温光致发光谱计算得到在溅射AlN成核层和复合成核层上生长的黄光LED的内量子效率(室温295 K)分别为12.5%和29.8%。

Abstract

A hybrid nucleation layer consisting of sputtered AlN component and mid-temperature GaN component was developed to improve the internal quantum efficiency of yellow LED. Transmission electron microscopy

X-ray diffraction

and Raman spectra were used to characterize the crystal quality of InGaN-based yellow LEDs. The optical properties of InGaN-based yellow LEDs were investigated by temperature-dependent photoluminescence spectra and electroluminescence spectra. It is found that stacking faults are formed using the hybrid nucleation layer

which can effectively reduce the dislocation density and residual stress in the epitaxial layer. The dislocation density of yellow LED epitaxial layer grown on the sputtered AlN nucleation layer and hybrid nucleation layer is 5.04×10

-2

and 3.98×10

-2

. The in-plane compressive stress of yellow LED grown on the sputtered AlN nucleation layer and hybrid nucleation layer is 482.71 MPa and 266.38 MPa. By replacing the conventional sputtered AlN nucleation layer with hybrid nucleation layer

the internal quantum efficiency of yellow LEDs is increased from 12.5% to 29.8% at room temperature of 295 K.

关键词

黄光发光二极管成核层内量子效率堆垛层错压电极化

Keywords

yellow light-emitting diodesnucleation layersinternal quantum efficiencystacking faultspiezoelectric polarization

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