异质诱导酞菁锌有机薄膜晶体管的蒸镀工艺

董金鹏; 孙强; 李桂娟; 苏和平; 王璐; 朱阳阳; 王丽娟

doi:10.37188/CJL.20210024

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异质诱导酞菁锌有机薄膜晶体管的蒸镀工艺

器件制备及器件物理 | 更新时间：2021-05-20

- 异质诱导酞菁锌有机薄膜晶体管的蒸镀工艺
- Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor
- 发光学报 2021年42卷第5期页码：700-707
- 作者机构：
  
  1.长春工业大学　化学工程学院，吉林　长春　 130012
  2.海南科技职业大学，海南　海口　 571126
- 作者简介：
  
  [ "董金鹏(1999-)，男，吉林松原人，在读本科生，主要从事有机薄膜晶体管与聚合物太阳能电池的研究。E-mail: 1538545969@qq.com" ]
  [ "王丽娟(1975-)，女，黑龙江集贤人，博士，副教授,2008年于长春理工大学获得博士学位，主要从事有机薄膜晶体管、气体传感器、太阳能电池、新型显示技术等方面的研究。E-mail: wlj15@163.com" ]
- 基金信息：
  
  吉林省大学生创新创业训练计划项目(202010190106);吉林省科技厅重点攻关项目(20200403146SF);吉林省教育厅项目(JJKH20200682KJ);吉林省教育厅(JJKH20200682KJ)
- DOI：10.37188/CJL.20210024
  中图分类号： TN321⁺.5
- 收稿日期：2021-01-13，
  
  修回日期：2021-02-01，
  
  纸质出版日期：2021-05-01
- 稿件说明：
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董金鹏, 孙强, 李桂娟, 等. 异质诱导酞菁锌有机薄膜晶体管的蒸镀工艺[J]. 发光学报, 2021,42(5):700-707.

Jin-peng DONG, Qiang SUN, Gui-juan LI, et al. Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor[J]. Chinese journal of luminescence, 2021, 42(5): 700-707.
董金鹏, 孙强, 李桂娟, 等. 异质诱导酞菁锌有机薄膜晶体管的蒸镀工艺[J]. 发光学报, 2021,42(5):700-707. DOI： 10.37188/CJL.20210024.

Jin-peng DONG, Qiang SUN, Gui-juan LI, et al. Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor[J]. Chinese journal of luminescence, 2021, 42(5): 700-707. DOI： 10.37188/CJL.20210024.

摘要

通过调控对六联苯(

6P)诱导层和酞菁锌(ZnPc)蒸镀工艺条件，研究了有机半导体小分子的结晶生长成膜与ZnPc有机薄膜晶体管(OTFT)器件电性能的关系。结果表明

6P在180190 ℃较高的衬底生长温度和34 nm的生长厚度下能够形成更大的结晶畴以及对二氧化硅衬底表面更好的覆盖，有利于诱导ZnPc小分子的结晶生长，使晶畴的排列更加有序。同时通过X射线衍射分析晶体结构，结果表明

-6P衬底温度的升高会明显提高ZnPc薄膜的结晶性。电性能研究发现

ZnPc蒸镀厚度的增加会显著提高器件的饱和电流和迁移率，在异质诱导条件下

-6P薄膜厚度为3 nm、ZnPc蒸镀厚度为20 nm时，器件的饱和电流为1.08×10

-6

A，迁移率为1.66×10

-2

·V

-1

·s

-1

。

Abstract

By adjusting the para-hexabiphenyl(

-6P) induction layer and zinc phthalocyanine(ZnPc) evaporation process conditions

the relationship between the crystal growth of organic semiconductor small molecules and the electrical properties of ZnPc OTFT devices was studied. The results showed that

-6P films can form larger crystal domains and better surface coverage on silicon dioxide substrate under the substrate growth temperature of 180-190 ℃ and the growth thickness of 3-4 nm. This was beneficial to induce the crystal growth of ZnPc molecules and make the arrangement of the crystal domains more orderly. At the same time

the crystal structure was analyzed by X-ray diffraction. The results showed that the rise in temperature of the

-6P substrate would significantly improve the crystallinity of the ZnPc films. Combined with the study of electrical properties

the increase of ZnPc vapor deposition thickness will significantly increase the saturation current and device mobility of the device. Under heterogeneous induction conditions

when the

-6P film thickness is 3 nm and the ZnPc film thickness is 20 nm

the saturation current of the device is 1.08×10

-6

and the mobility is 1.66×10

-2

·V

-1

·s

-1

关键词

Keywords

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