高功率半导体激光列阵芯片测试表征与仿真优化

杜宇琦; 王贞福; 张晓颖; 杨国文; 李特; 刘育衔; 李波; 常奕栋; 赵宇亮; 兰宇

doi:10.37188/CJL.20210014

您当前的位置：

首页 >

文章列表页 >

高功率半导体激光列阵芯片测试表征与仿真优化

器件制备及器件物理 | 更新时间：2021-05-20

- 高功率半导体激光列阵芯片测试表征与仿真优化
- Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips
- 发光学报 2021年42卷第5期页码：674-681
- 作者机构：
  
  1.中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西　西安　 710119
  2.中国科学院大学，北京　 100049
  3.陕西省计量科学研究院，陕西　西安　 710100
- 作者简介：
  
  [ "杜宇琦(1995-)，女，山西吕梁人，硕士研究生,2018年于太原理工大学获得学士学位，主要从事高功率半导体激光器机理分析方面的研究。E-mail: duyuqi@opt.cn" ]
  [ "王贞福(1982-)，男，山东高密人，博士，副研究员,2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高功率、高效率半导体激光器方面的研究。E-mail:wzf2718@opt.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(61504167);陕西省自然科学基金(2019ZY-CXPT-03-05;2018JM6010;2015JQ6263);陕西省科技厅人才项目(2017KJXX-72)
- DOI：10.37188/CJL.20210014
  中图分类号： TN248.4
- 纸质出版日期：2021-05-01，
  
  收稿日期：2021-01-05，
  
  修回日期：2021-01-19，
扫描看全文
杜宇琦, 王贞福, 张晓颖, 等. 高功率半导体激光列阵芯片测试表征与仿真优化[J]. 发光学报, 2021,42(5):674-681.

Yu-qi DU, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips[J]. Chinese Journal of Luminescence, 2021,42(5):674-681.
杜宇琦, 王贞福, 张晓颖, 等. 高功率半导体激光列阵芯片测试表征与仿真优化[J]. 发光学报, 2021,42(5):674-681. DOI： 10.37188/CJL.20210014.

Yu-qi DU, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips[J]. Chinese Journal of Luminescence, 2021,42(5):674-681. DOI： 10.37188/CJL.20210014.

摘要

针对高功率半导体激光芯片工作温度升高易引起芯片性能退化和失效问题，首先理论分析了工作温度对内量子效率的影响机理。其次，为量化温度影响芯片稳定性的主要因素，自主搭建高功率半导体激光列阵芯片测试系统，研究15~60 ℃半导体激光列阵芯片的温度特性，分析了5种能量损耗分布及其随温度的变化趋势。实验结果表明，当温度由15 ℃升高至60 ℃，载流子泄漏损耗占比由2.30%急剧上升至11.36%，是造成半导体激光芯片在高温下电光转换效率降低的主要因素。最后进行了外延结构的仿真优化，仿真结果表明，提高波导层Al组分至20%，能有效限制载流子泄漏，平衡Al组分增加带来的串联电阻增大问题，可以获得高效率输出。该研究对高温下半导体激光芯片的设计具有重要的指导意义。

Abstract

Due to small size

light weight

high efficiency and long operation life

high power semiconductor laser array chips have gradually entered into mass-markets and emerged applications

such as laser pumping

materials processing

medical therapy and lidar. However

limited by high-temperature working environments such as material processing

the development of high power semiconductor laser is hindered. Since laser diode arrays work in high-temperature working environments and generate great quantity during operating

the output power and reliability of high power semiconductor laser is decreased

which is caused by reducing in slope efficiency

increasing in threshold current

and wavelength redshift. Hence

it is vital to research the optoelectronic performance and laser diode array optimization of semiconductor laser under high temperature. To improve the high temperature performance of high-power semiconductor laser chips

firstly

the influence mechanism of environment temperature on internal quantum efficiency is analyzed theoretically. Secondly

in order to quantify the main factors affecting the stability of the chip

the high-power semiconductor laser array chips test system was built to study the characteristics of the laser diode array chips at 15-60 ℃

and analyze energy loss distribution at various temperatures. The experimental results show that when the temperature rises from 15 ℃ to 60 ℃

the percentage of carrier leakage loss increases sharply from 2.30% to 11.36%

which is the main factor affecting the high temperature operation of semiconductor laser array chips. Finally

the chip structure simulation shows that increasing the Al composition of the waveguide layer to 20% can effectively limit carrier leakage

balance the increase in series resistance caused by the increase of Al composition

and obtain high electro-optical conversion efficiency. This research can provide a reference for the design of high-temperature laser diode array chips.

关键词

高功率半导体激光列阵芯片高温特性能量损耗分布

Keywords

high powerlaser diode array chipshigh temperature characteristicenergy loss distribution

references

SKIDMORE J, PETERS M, ROSSIN V, et al.. Advances in high-power 9xx nm laser diodes for pumping fiber lasers[C].Proceedings of the SPIE 9733 High-power Diode Laser Technology and Applications ⅩⅣ, San Francisco, 2016: 97330B.

BACHMANN F. Industrial applications of high power diode lasers in materials processing[J].Appl. Surf. Sci., 2003, 208-209:125-136.

LEPSELTER J, ELMAN M. Biological and clinical aspects in laser hair removal[J].J. Dermatolog. Treat., 2004, 15(2):72-83

陈湘君, 陈自来. 固体激光雷达的发展现状[J].红外与激光工程, 1998, 27(6):24-28.

CHEN X J, CHEN Z L. Development of the solid laser radar[J].Infrared Laser Eng., 1998, 27(6):24-28. (in Chinese)

曼玉选, 仲莉, 马骁宇, 等. 极低内部光学损耗975 nm半导体激光器[J].光学学报, 2020, 40(19):1914001-1-5.

ZHANG M X, ZHONG L, MA X Y, et al.. 975 nm semiconductor lasers with ultra-low internal optical loss[J].Acta Opt. Sinica, 2020, 40(19):1914001-1-5. (in Chinese)

MA S J, WANG Y P, SODABANLU H, et al.. Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure[J].J. Cryst. Growth, 2013, 370:157-162.

杜石磊. 脊型波导形状对单模半导体激光器输出特性的影响研究[D].长春:长春理工大学, 2011.

DU S L. Study on the Output Characteristics of Single-mode Semiconductor Laser with Different Shape of Ridge Waveguide[D].Changchun:Changchun University of Science and Technology, 2011. (in Chinese)

王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展[J].发光学报, 2015, 36(1):1-19.

WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J].Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

江先锋, 张丽芳, 郭栓银, 等. 高温硬焊料准连续半导体激光器巴条叠阵的性能研究[J].发光学报, 2015, 36(5):563-566.

JIANG X F, ZHANG L F, GUO S Y, et al.. Research on performance of high temperature hard solder diode laser array[J].Chin. J. Lumin., 2015, 36(5):563-566. (in Chinese)

李明山, 张文平, 王石语, 等. 高温环境下大功率DPL的LD最佳散热效果[J].红外与激光工程, 2008, 37(2):221-225.

LI M S, ZHANG W P, WANG S Y, et al.. Optimal thermal dissipation of LD in high power DPL under high temperature environment[J].Infrared Laser Eng., 2008, 37(2):221-225. (in Chinese)

KANAZAWA S, TAKEDA K, MIYAMOTO T, et al.. High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser[C].Proceedings of the SPIE 6352 Optoelectronic Materials and Devices, Gwangju, 2006: 63520L.

CRUMP P, BLUME G, PASCHKE K, et al.. 20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96 μm[C].Proceedings of the SPIE 7198 High-power Diode Laser Technology and Applications Ⅶ, San Jose, 2009: 719814.

HÜLSEWEDE R, ZORN M. Efficient and high-brightness broad area laser diodes designed for high-temperature operation:advantages of semiconductor laser diodes as efficient high-power laser light sources applicable at elevated ambient temperatures[J].PhotonicsViews, 2020, 17(2):52-56.

李再金, 芦鹏, 李特, 等. 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J].发光学报, 2012, 33(6):647-650.

LI Z J, LU P, LI T, et al.. Temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode[J].Chin. J. Lumin., 2012, 33(6):647-650. (in Chinese)

刘旭, 程勇, 万强, 等. 高温激光二极管抽运全固态激光器[J].中国激光, 2016, 43(7):0701003-1-6.

LIU X, CHENG Y, WAN Q, et al.. High temperature laser diode pumped all-solid-state laser[J].Chin. J. Lasers, 2016, 43(7):0701003-1-6. (in Chinese)

WANG Z F, LI T, YANG G W, et al.. High power, high efficiency continuous-wave 808 nm laser diode arrays[J].Opt. Laser Technol., 2017, 97:297-301.

PIPREK J. Advanced analysis of high-temperature failure mechanisms in telecom lasers[C].Proceedings of the SPIE 4533 Semiconductor Lasers for Lightwave Communication Systems, Denver, 2001: 70-81.

CRUMP P, GRIMSHAW M, WANG J, et al.. 85% power conversion efficiency 975-nm broad area diode lasers at -50 ℃,76% at 10 ℃[C].Proceedings of the 2006 Conference on Lasers and Electro-optics and 2006 Quantum Electronics and Laser Science Conference, Long Beach, 2006: 1-2.

KANSKAR M, EARLES T, GOODNOUGH T, et al.. High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems[C].Proceedings of the SPIE 5738 Novel In-plane Semiconductor Lasers Ⅳ, San Jose, 2005: 47-56.

刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 第4版. 北京:国防工业出版社, 2010.

LIU E K, ZHU B S, LUO J S. Semiconductor Physics [M].4th ed. Beijing:National Defense Industry Press, 2010 (in Chinese)

宋云菲, 王贞福, 李特, 等. 808 nm半导体激光芯片电光转换效率的温度特性机理研究[J].物理学报, 2017, 66(10):104202-1-6.

SONG Y F, WANG Z F, LI T, et al.. Efficiency analysis of 808 nm laser diode array under different operating temperatures[J].Acta Phys. Sinica, 2017, 66(10):104202-1-6. (in Chinese)

FREVERT C, CRUMP P, BUGGE F, et al.. The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K[J].Semiconductor Sci. Technol., 2016, 31(2):025003.

浏览量

165

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

全固态高功率准连续板条激光器

垂直腔面发射激光器研究进展

高功率半导体激光阵列的高温特性机理

分布式抽运连续光纤激光器研究