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SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响
Effect of SiO2 Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance
- 发光学报 2021年42卷第4期 页码：526-533
- 作者机构：
1.厦门大学 材料学院，福建 厦门 361000
2.福建中晶科技有限公司，福建 龙岩 364000
- 作者简介：
[ "李思宏(1996-)，男，福建漳州人，硕士研究生，2018 年于福建工程学院获得学士学位，主要从事半导体光电子材料和器件的研究。E-mail: Lisihongxmu@163.com" ]
[ "罗学涛(1964-)，男，湖北麻城人，博士，教授，博士研究生导师，1996年于西北工业大学获得博士学位，主要从事半导体光电子材料和器件的研究。E-mail: xuetao@xmu.edu.cn" ]
- 基金信息：厦门大学与福建中晶科技有限公司合作项目(XDHT2018582A)
DOI：10.37188/CJL.20200327
中图分类号： TN312.8纸质出版日期：2021-04-01，
收稿日期：2020-10-29，
修回日期：2020-12-19，
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李思宏, 侯想, 罗荣煌, 等. SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响[J]. 发光学报, 2021,42(4):526-533.
Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO2 Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance[J]. Chinese Journal of Luminescence, 2021,42(4):526-533.
李思宏, 侯想, 罗荣煌, 等. SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响[J]. 发光学报, 2021,42(4):526-533. DOI： 10.37188/CJL.20200327.
Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO2 Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance[J]. Chinese Journal of Luminescence, 2021,42(4):526-533. DOI： 10.37188/CJL.20200327.
摘要
为了提高氮化镓(GaN)基发光二极管(LEDs)的发光性能，采用等离子体增强化学气相沉积(PECVD)在蓝宝石衬底上沉积SiO
2
薄膜，经过光刻和干法刻蚀技术制备了SiO
2
图形化蓝宝石衬底(SiO
2
patterned sapphire substrate
SPSS)，利用LED器件的外延生长和微纳加工技术获得了基于SPSS的GaN基LED器件。通过分析GaN外延层晶体质量、光提取效率和LED器件性能，重点研究了SPSS对GaN生长及LED发光性能的影响。实验及模拟仿真结果表明，与常规图形化蓝宝石衬底(Conventional patterned sapphire substrate
CPSS)相比，SPSS上生长的GaN外延层位错密度较低，晶体质量较高，SPSS-LED的光提取效率提高26%、光输出功率和亮度均提高约5%。
Abstract
To improve the luminescence performance of gallium nitride(GaN)-based light-emitting diodes(LEDs)
a SiO
2
film was deposited on sapphire substrates by the plasma-enhanced chemical vapor deposition(PECVD) in this study. After depositing the SiO
2
film
a SiO
2
patterned sapphire substrate(SPSS) was prepared through photolithography and dry etching
and a GaN-based LED device with SPSS was obtained by using epitaxial growth and micro-nano processing technology of the LED device. The effect of SPSS on the crystal quality of the GaN epitaxial layer
the light extraction efficiency
and the performance of the LED device were investigated. The experimental and simulation results show that
compared to the conventional patterned sapphire substrates(CPSS)
the GaN epitaxial layer grown on SPSS had lower dislocation density and higher crystal quality
and the light extraction efficiency of SPSS-LED was increased by 26%
as well as that the light output power and brightness of SPSS-LED were both increased by about 5%.
关键词
SiO2蓝宝石复合衬底LED芯片位错密度GaN光提取效率
Keywords
SiO2 sapphire composite substrateLED chipdislocation densityGaNlight extraction efficiency
references
ZHAO Y, XU S R, ZHANG J C, et al. Optical properties evolution of GaN film grown via lateral epitaxial overgrowth [J].Appl. Surf. Sci., 2020, 513:145816.
HE X G, ZHAO D G, JIANG D S, et al. GaN high electron mobility transistors with AlInN back barriers [J].J. Alloys Compd., 2016, 662:16-19.
TARAUNI Y U, THIRUVADIGAL D J, JOSEPH H B. Characterization and optimization of MIS-HEMTs device of highk dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application [J].Appl. Surf. Sci., 2019, 488:427-433.
刘卫华，李有群，方文卿，等. Si衬底GaN基LED的结温特性 [J].发光学报，2006，27(2):211-214.
LIU W P, LI Y Q, FANG W Q, et al. The Junction-temperature characteristic of GaN light-emitting diodes on Si substrate [J].Chin. J. Lumin., 2006, 27(2):211-214. (in Chinese)
陈耀，王文新，黎艳，等. 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜 [J].发光学报，2011，32(9):896-901.
CHEN Y, WANG W X, LI Y, et al. High quality GaN layers grown on SiC substrates with AlN buffers by metalorganic chemical vapor deposition [J].Chin. J. Lumin., 2011, 32(9):896-901. (in Chinese)
ABELL J, MOUSTAKAS T D. The role of dislocations as nonradiative recombination centers in InGaN quantum wells [J].Appl. Phys. Lett., 2008, 92(9):091901-1-3.
YOU J H, LU J Q, JOHNSON H T. Electron scattering due to threading edge dislocations in n-type wurtzite GaN [J].J. Appl. Phys., 2006, 99(3):033706-1-10.
XU Y, SU X J, CAO B, et al. In-plane misfits' localization in GaN via graphene-ELOG technology [J].CrystEngComm, 2019, 21(5):902-907.
WIERER J J, KRAMES M R, EPLER J E, et al. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures [J].Appl. Phys. Lett., 2004, 84(19):3885-3887.
FUJII T, GAO Y, SHARMA R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].Appl. Phys. Lett., 2004, 84(6):855-857.
WU H Y, XU S R, FENG L S, et al. Patterned sapphire substrates cause a wavelength shift of green InGaN light-emitting diodes [J].Opt. Mater. Express, 2020, 10(9):2045-2053.
LEE Y J, HWANG J M, HSU T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates [J].IEEE Photonics Technol. Lett., 2006, 18(10):1152-1154.
LEE Y C, YEH S C, CHOU Y Y, et al. High-efficiency InGaN-based LEDs grown on patterned sapphire substrates using nanoimprinting technology [J].Microelectron. Eng., 2013, 105:86-90.
LIN Y S, YEH J A. GaN-based light-emitting diodes grown on nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures [J].Appl. Phys. Express, 2011, 4(9):092103-1-3.
UEDA K, TSUCHIDA Y, HAGURA N, et al. High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film [J].Appl. Phys. Lett., 2008, 92(10):101101-1-3.
LI Q M, FIGIEL J J, WANG G T. Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres [J].Appl. Phys. Lett., 2009, 94(23):231105-1-3.
HEYING B, WU X H, KELLER S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films [J].Appl. Phys. Lett., 1996, 68(5):643-645.
SRIKANT V, SPECK J S, CLARKE D R. Mosaic structure in epitaxial thin films having large lattice mismatch [J].J. Appl. Phys., 1997, 82(9):4286-4295.
WANG M T, LIAO K Y, LI Y L. Growth mechanism and strain variation of GaN material grown on patterned sapphire substrates with various pattern designs [J].IEEE Photonics Technol. Lett., 2011, 23(14):962-964.
GRADEČAK S, STADELMANN P, WAGNER V, et al. Bending of dislocations in GaN during epitaxial lateral overgrowth [J].Appl. Phys. Lett., 2004, 85(20):4648-4650.
SCHENK H P D, VENNÉGUÈS P, TOTTEREAU O, et al. Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy [J].J. Cryst. Growth, 2003, 258(3-4):232-250.
WANG H Y, XU H, HUANG T T, et al. Thermodynamics of wurtzite GaN from first-principle calculation [J].Eur. Phys. J. B, 2008, 62(1):39-43.
WEBER M J. Handbook of Optical Materials [M].Florida:CRC Press, 2003.
PALIK E D. Handbook of Optical Constants of Solids [M].Washington:Academic Press, 1985.
BENISTY H, STANLEY R, MAYER M. Method of source terms for dipole emission modification in modes of arbitrary planar structures [J].J. Opt. Soc. Am. A, 1998, 15(5):1192-1201.
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