射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质

高振杰; 杨元政; 谢致薇; 王彦利

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射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质

材料合成及性能研究 | 更新时间：2020-08-12

- 射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质
- Structural and Photoluminescence Properties of Eu-doped ZnO Thin Films Grown by RF Magnetron Sputtering
- 发光学报 2011年32卷第10期页码：1004-1008
- 作者机构：
  
  广东工业大学材料与能源学院,广东广州,510006
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50771037)();高等学校博士学科点专项科研基金(200805620004)资助项目()
- DOI：
  中图分类号： O484.1;O482.31
- 纸质出版日期：2011-10-22，
  
  网络出版日期：2011-10-22，
  
  收稿日期：2011-4-6，
  
  修回日期：2011-6-30，
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高振杰, 杨元政, 谢致薇, 王彦利. 射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质[J]. 发光学报, 2011,32(10): 1004-1008

GAO Zhen-jie, YANG Yuan-zheng, XIE Zhi-wei, WANG Yan-li. Structural and Photoluminescence Properties of Eu-doped ZnO Thin Films Grown by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2011,32(10): 1004-1008
高振杰, 杨元政, 谢致薇, 王彦利. 射频磁控溅射法制备的Eu掺杂ZnO 薄膜的结构及其发光性质[J]. 发光学报, 2011,32(10): 1004-1008 DOI：

GAO Zhen-jie, YANG Yuan-zheng, XIE Zhi-wei, WANG Yan-li. Structural and Photoluminescence Properties of Eu-doped ZnO Thin Films Grown by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2011,32(10): 1004-1008 DOI：

摘要

用射频磁控溅射法在石英衬底上制备了ZnO∶Eu

薄膜

通过X射线衍射仪﹑扫描电子显微镜和荧光光谱仪测试了薄膜结构﹑形貌以及发光性能

重点考察了溅射功率和退火工艺对其组织结构和发光性能的影响。结果表明:样品均呈现ZnO的六角纤锌矿结构

增大溅射功率有利于形成ZnO的

轴择优取向;增大溅射功率以及高温退火会使晶粒尺寸增大;观察到稀土元素内部4f壳层的电子跃迁以及从ZnO基质到Eu

离子之间的能量传递现象

增大溅射功率以及780 ℃退火能提高ZnO∶Eu

薄膜的发光特性。

Abstract

ZnO∶Eu

thin films were deposited on quartz substrates by radio frequency(RF) magnetron sputtering. The lattice structure

surface morphology and photoluminescence (PL) properties were analyzed by X-ray diffractometer (XRD)

scanning electron microscope (SEM) and spectrometer

respectively. Effects of RF sputtering power and heat treatment on the structure and PL properties were studied in detail. The results showed that all the ZnO films had a hexagonal wurtzite structure and a higher RF sputtering power was beneficial to (002) preferred orientation. The films grains grew up as the RF sputtering power and heat treatment temperature increased. Moreover

we observed the phenomenon of electron transitions in intra-4f shell of Eu

and energy transfer from ZnO host to the doped Eu

in these ZnO∶Eu

films. Besides

as the RF sputtering power increased and after annealed at 780 ℃

the PL properties of ZnO∶Eu

films were obviously improved.

关键词

ZnO∶Eu3+光致发光磁控溅射

Keywords

ZnO∶Eu3+photoluminescencemagnetron sputtering

references

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