氧气压强对PLD制备MgZnO薄膜光学性质的影响

汪壮兵; 王 莉; 吴春艳; 于永强; 胡治中; 梁 齐; 许小亮; 揭建胜

doi:null

您当前的位置：

首页 >

文章列表页 >

氧气压强对PLD制备MgZnO薄膜光学性质的影响

论文 | 更新时间：2020-08-12

- 氧气压强对PLD制备MgZnO薄膜光学性质的影响
- Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD
- 发光学报 2010年31卷第5期页码：639-645
- 作者机构：
  
  1. 中国科学技术大学物理系
  2. 合肥工业大学电子科学与应用物理学院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  Project supported by National Natural Science Foundation of China (60806028)();the f
- DOI：
  中图分类号： O472.3;O482.31
- 纸质出版日期：2010-9-21，
  
  网络出版日期：2010-9-21，
  
  收稿日期：2009-10-20，
  
  修回日期：2010-2-25，
扫描看全文
汪壮兵, 王莉, 吴春艳, 于永强, 胡治中, 梁齐, 许小亮, 揭建胜. 氧气压强对PLD制备MgZnO薄膜光学性质的影响[J]. 发光学报, 2010,31(5): 639-645

WANG Zhuang-bing, WANG Li, WU Chun-yan, YU Yong-qiang, HU Zhi-zhong, LIANG Qi, XU Xiao-liang, JIE Jian-sheng. Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD[J]. 发光学报, 2010,31(5): 639-645
汪壮兵, 王莉, 吴春艳, 于永强, 胡治中, 梁齐, 许小亮, 揭建胜. 氧气压强对PLD制备MgZnO薄膜光学性质的影响[J]. 发光学报, 2010,31(5): 639-645 DOI：

WANG Zhuang-bing, WANG Li, WU Chun-yan, YU Yong-qiang, HU Zhi-zhong, LIANG Qi, XU Xiao-liang, JIE Jian-sheng. Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD[J]. 发光学报, 2010,31(5): 639-645 DOI：

摘要

使用准分子脉冲激光沉积(PLD)方法在Si(100)基片上制备了高度

轴取向的MgZnO薄膜。分别使用SEM、XRD、XPS、PL谱和吸收谱表征了薄膜的形貌、结构、成分和光学性质。实验发现氧气压强对MgZnO薄膜的结构和光学性质有重要影响。当氧气压强由5 Pa增大到45 Pa时

薄膜的PL谱紫外峰蓝移了86 meV

表明氧气压强的增大提高了MgZnO薄膜中Mg的溶解度。在15 Pa氧气压强下制备的薄膜显示了独特、均匀的六角纳米柱状结构

其PL谱展示了优异的发光特性

具有比其他制备条件下超强的紫外发射和微弱的可见发光。500~600 nm范围内的绿光发射

我们讨论其机理可能源于深能级中与氧相关的缺陷。使用PLD得到纳米柱状结构表明:优化制备条件

可望使用PLD制备ZnO纳米阵列的外延衬底;可使用PLD技术开发基于ZnO纳米结构的高效发光器件。

Abstract

MgZnO films with highly

-axis orientation have been prepared on silicon (100) substrates via the excimer laser PLD method. The morphologies

structures

components

and optical properties have been systemically characterized by SEM

XRD

XPS

PL and absorption measurements. It has been found the oxygen pressure plays an important role in determining the structure and optical properties of the MgZnO film. The film grown at 15 Pa exhibits a unique nanocrystal structure with very high optical quality. It has been found that the UV emission peak is blue-shift about 86 meV with the oxygen pressure increaseing from 5 to 45 Pa due to the increased solubility of Mg in MgZnO films. As for the green emissions located between 500~600 nm

they can be attributed to the deep-level emission of oxygen related defects. Our work will be of benefit to the further research to prepare epitaxial layer for growing ZnO nanoarrays by PLD technique.

关键词

MgZnO薄膜氧气压强蓝移

Keywords

MgZnO filmsoxygen pressureblue shift

references

Jun Young Bae, Yoo Jinkyoung, Yi Gyu-Chul. Fabrication and photoluminescent characteristics of ZnO/Mg0.2Zn0.8O coaxial nanorod single quantum well structures

. Appl. Phys. Lett., 2006, 89 (17):173114-1-3.

Morhain C, Bretagon T, Lefebvre P, et al. Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells

. Phys. Rev. B, 2005, 72 (24):241305-1-3.

Kim Chinkyo, Park Won, Yi Gyu-chul, et al. Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods

. Appl. Phys. Lett., 2006, 89 (11):113106-1-3.

Su Shichen, Lu Youming, Zhang Zhenzhong, et al. Structural and optical properties of high quality MgxZn1-xO films grown by P-MBE

. Chin. J. Lumin. (发光学报), 2008, 29 (2):309-312 (in Chinese).

Dong Lipu, Liu Yuxue, Xu Changshan, et al. High quality MgxZn1-xO films fabricated by electron beam evaporation combined with heat treatment

. Chin. J. Lumin.(发光学报), 2008, 29 (2):313-317 (in Chinese).

Zhou Jun, Fang Qingqing, Wang Baoming, et al. Preparation and luminescence properties of Zn1-xMg<em>xO thin films by sol-gel method

. Chin. J. Lumin.(发光学报), 2008, 29 (6):1036-1040 (in Chinese).

Zhu B L, Zhao X Z, Su F H, et al. Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

. Phys. B, 2007, 396 (1-2):95-101.

Liu M, Wei X Q, Zhang Z G, et al. Effect of temperature on pulsed laser deposition of ZnO films

. Appl. Sur. Sci., 2006, 252 (12):4321-4326.

Wang Zhaoyang, Hu Lizhong, Zhao Jie, et al. Effect of the variation of temperature on the structure and optical properties of ZnO thin films prepared on Si(111) substrate using PLD

. Vacuum, 2005, 78 (1):53-57.

Bian Jiming, Du Guotong, Hu Lizhong, et al. Growth and photoluminescence characteristics of high quality ZnO films by pulsed laser deposition (PLD) method

. Chin. J. Lumin. (发光学报), 2006, 27 (6):958-962.

Fan X M, Lian J S, Guo Z X, et al. Microstructure and photoluminescence properties of ZnO thin films grown by PLD on Si(111) substrates

. Appl. Sur. Sci., 2005, 239 (2):176-181.

Fan X M, Lian J S, Jiang Q, et al. Effect of oxygen pressure on the photoluminescence properties of ZnO thin films by PLD

. J. Mater. Sci., 42 (8):2678-2683.

Kim Sang Sub, Lee Byung-Teak. Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(001)

. Thin Solid Films, 2004, 446 (2):307-312.

Yan M, Zhang H T, Widjaja E J, et al. Self-assembly of well-aligned gallium-doped zinc oxide nanorods

. J. Appl. Phys., 2003, 94 (8):5240-5246.

Choopum S, Vispute R D, Zoch W, et al. Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

. Appl. Phys. Lett., 1999, 75 (25):253947-1-3.

Lorenz M, Kaidashev E M, Rahm A, et al. Mg<em>xZn1-xO(0＜x＜0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition

. Appl. Phys. Lett., 2005, 86 (14):143113-1-3.

Yanfei Gu, Xiaomin Li, Weidong Yu, et al. Microstructures, electrical and optical characteristics of ZnO thin films by oxygen plasma-assisted pulsed laser deposition

. J. Crystal Growth, 2007, 305 (1):36-39.

Wei X Q, Man B Y, Liu M, et al. Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2

. Phys. B, 2007, 388 (1-2):145-152.

Ohtomo A, Kawasaki M, Koida T, et al. MgxZn1-xO as a Ⅱ-Ⅵ widegap semiconductor alloy

. Appl. Phys. Lett., 1998, 72 (19):2466-2468.

Sharma A K, Narayan J, Muth J F, et al. Optical and structural properties of epitaxial MgxZn1-xO alloys

. Appl. Phys. Lett., 1999, 75 (21):3327-3329.

Liu W, Gu S L, Zhu S M, et al. The deposition and annealing study of MOCVD ZnMgO

. J. Crystal Growth, 2005, 277 (1-4):416-421.

Lin B, Fu Z, Jia Y. Green luminescent center in undoped zinc oxide films deposited on silicon substrates

. Appl. Phys. Lett., 2001, 79 (7):943-945.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于GaAs膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究

新型锌离子荧光探针(5-(二甲基氨基)-N-(4-(2-(2-喹啉亚甲基)甲酰肼基)苯基)萘-1-磺酰胺)的研究

高脉冲功率能量PLD法制备MgZnO薄膜中的沉积机理