氧气压强对PLD制备MgZnO薄膜光学性质的影响

汪壮兵; 王 莉; 吴春艳; 于永强; 胡治中; 梁 齐; 许小亮; 揭建胜

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氧气压强对PLD制备MgZnO薄膜光学性质的影响

论文 | 更新时间：2020-08-12

- 氧气压强对PLD制备MgZnO薄膜光学性质的影响
- Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD
- 发光学报 2010年31卷第5期页码：639-645
- 作者机构：
  
  1. 中国科学技术大学物理系
  2. 合肥工业大学电子科学与应用物理学院
- 作者简介：
- 基金信息：
  
  Project supported by National Natural Science Foundation of China (60806028)();the f
- DOI：
  中图分类号： O472.3;O482.31
- 收稿：2009-10-20，
  
  修回：2010-2-25，
  
  网络首发：2010-09-21，
  
  纸质出版：2010-09-21
- 稿件说明：
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汪壮兵, 王莉, 吴春艳, 于永强, 胡治中, 梁齐, 许小亮, 揭建胜. 氧气压强对PLD制备MgZnO薄膜光学性质的影响[J]. 发光学报, 2010,31(5): 639-645

WANG Zhuang-bing, WANG Li, WU Chun-yan, YU Yong-qiang, HU Zhi-zhong, LIANG Qi, XU Xiao-liang, JIE Jian-sheng. Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD[J]. 发光学报, 2010,31(5): 639-645
汪壮兵, 王莉, 吴春艳, 于永强, 胡治中, 梁齐, 许小亮, 揭建胜. 氧气压强对PLD制备MgZnO薄膜光学性质的影响[J]. 发光学报, 2010,31(5): 639-645 DOI：

WANG Zhuang-bing, WANG Li, WU Chun-yan, YU Yong-qiang, HU Zhi-zhong, LIANG Qi, XU Xiao-liang, JIE Jian-sheng. Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD[J]. 发光学报, 2010,31(5): 639-645 DOI：

摘要

使用准分子脉冲激光沉积(PLD)方法在Si(100)基片上制备了高度

轴取向的MgZnO薄膜。分别使用SEM、XRD、XPS、PL谱和吸收谱表征了薄膜的形貌、结构、成分和光学性质。实验发现氧气压强对MgZnO薄膜的结构和光学性质有重要影响。当氧气压强由5 Pa增大到45 Pa时

薄膜的PL谱紫外峰蓝移了86 meV

表明氧气压强的增大提高了MgZnO薄膜中Mg的溶解度。在15 Pa氧气压强下制备的薄膜显示了独特、均匀的六角纳米柱状结构

其PL谱展示了优异的发光特性

具有比其他制备条件下超强的紫外发射和微弱的可见发光。500~600 nm范围内的绿光发射

我们讨论其机理可能源于深能级中与氧相关的缺陷。使用PLD得到纳米柱状结构表明:优化制备条件

可望使用PLD制备ZnO纳米阵列的外延衬底;可使用PLD技术开发基于ZnO纳米结构的高效发光器件。

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references

Jun Young Bae, Yoo Jinkyoung, Yi Gyu-Chul. Fabrication and photoluminescent characteristics of ZnO/Mg0.2Zn0.8O coaxial nanorod single quantum well structures

. Appl. Phys. Lett., 2006, 89 (17):173114-1-3.

Morhain C, Bretagon T, Lefebvre P, et al. Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells

. Phys. Rev. B, 2005, 72 (24):241305-1-3.

Kim Chinkyo, Park Won, Yi Gyu-chul, et al. Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods

. Appl. Phys. Lett., 2006, 89 (11):113106-1-3.

Su Shichen, Lu Youming, Zhang Zhenzhong, et al. Structural and optical properties of high quality MgxZn1-xO films grown by P-MBE

. Chin. J. Lumin. (发光学报), 2008, 29 (2):309-312 (in Chinese).

Dong Lipu, Liu Yuxue, Xu Changshan, et al. High quality MgxZn1-xO films fabricated by electron beam evaporation combined with heat treatment

. Chin. J. Lumin.(发光学报), 2008, 29 (2):313-317 (in Chinese).

Zhou Jun, Fang Qingqing, Wang Baoming, et al. Preparation and luminescence properties of Zn1-xMg<em>xO thin films by sol-gel method

. Chin. J. Lumin.(发光学报), 2008, 29 (6):1036-1040 (in Chinese).

Zhu B L, Zhao X Z, Su F H, et al. Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

. Phys. B, 2007, 396 (1-2):95-101.

Liu M, Wei X Q, Zhang Z G, et al. Effect of temperature on pulsed laser deposition of ZnO films

. Appl. Sur. Sci., 2006, 252 (12):4321-4326.

Wang Zhaoyang, Hu Lizhong, Zhao Jie, et al. Effect of the variation of temperature on the structure and optical properties of ZnO thin films prepared on Si(111) substrate using PLD

. Vacuum, 2005, 78 (1):53-57.

Bian Jiming, Du Guotong, Hu Lizhong, et al. Growth and photoluminescence characteristics of high quality ZnO films by pulsed laser deposition (PLD) method

. Chin. J. Lumin. (发光学报), 2006, 27 (6):958-962.

Fan X M, Lian J S, Guo Z X, et al. Microstructure and photoluminescence properties of ZnO thin films grown by PLD on Si(111) substrates

. Appl. Sur. Sci., 2005, 239 (2):176-181.

Fan X M, Lian J S, Jiang Q, et al. Effect of oxygen pressure on the photoluminescence properties of ZnO thin films by PLD

. J. Mater. Sci., 42 (8):2678-2683.

Kim Sang Sub, Lee Byung-Teak. Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(001)

. Thin Solid Films, 2004, 446 (2):307-312.

Yan M, Zhang H T, Widjaja E J, et al. Self-assembly of well-aligned gallium-doped zinc oxide nanorods

. J. Appl. Phys., 2003, 94 (8):5240-5246.

Choopum S, Vispute R D, Zoch W, et al. Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

. Appl. Phys. Lett., 1999, 75 (25):253947-1-3.

Lorenz M, Kaidashev E M, Rahm A, et al. Mg<em>xZn1-xO(0＜x＜0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition

. Appl. Phys. Lett., 2005, 86 (14):143113-1-3.

Yanfei Gu, Xiaomin Li, Weidong Yu, et al. Microstructures, electrical and optical characteristics of ZnO thin films by oxygen plasma-assisted pulsed laser deposition

. J. Crystal Growth, 2007, 305 (1):36-39.

Wei X Q, Man B Y, Liu M, et al. Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2

. Phys. B, 2007, 388 (1-2):145-152.

Ohtomo A, Kawasaki M, Koida T, et al. MgxZn1-xO as a Ⅱ-Ⅵ widegap semiconductor alloy

. Appl. Phys. Lett., 1998, 72 (19):2466-2468.

Sharma A K, Narayan J, Muth J F, et al. Optical and structural properties of epitaxial MgxZn1-xO alloys

. Appl. Phys. Lett., 1999, 75 (21):3327-3329.

Liu W, Gu S L, Zhu S M, et al. The deposition and annealing study of MOCVD ZnMgO

. J. Crystal Growth, 2005, 277 (1-4):416-421.

Lin B, Fu Z, Jia Y. Green luminescent center in undoped zinc oxide films deposited on silicon substrates

. Appl. Phys. Lett., 2001, 79 (7):943-945.

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