In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制

魏国华; 王 斌; 李俊梅; 曹学伟; 张存洲; 徐晓轩

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In_0.2Ga_0.8As/GaAs单量子阱PL谱温度特性及其机制

论文 | 更新时间：2020-08-12

- In_0.2Ga_0.8As/GaAs单量子阱PL谱温度特性及其机制
- Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In_0.2Ga_0.8As/GaAs Single Quantum Well
- 发光学报 2010年31卷第5期页码：619-623
- 作者机构：
  
  1. 南开大学物理科学学院
  2. 南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室, 天津 300457
- 作者简介：
- 基金信息：
  
  天津市科技支撑计划重点项目基金(07ZCKCGX03600)();南开大学新教师科研启动基金(J02034)();南开大学物理学基地教学基金(J0730315)();南
- DOI：
  中图分类号： O472.3;O482.31
- 收稿：2009-12-29，
  
  修回：2010-1-28，
  
  网络首发：2010-09-21，
  
  纸质出版：2010-09-21
- 稿件说明：
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魏国华, 王斌, 李俊梅, 曹学伟, 张存洲, 徐晓轩. In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制[J]. 发光学报, 2010,31(5): 619-623

WEI Guo-hua, WANG Bin, LI Jun-mei, CAO Xue-wei, ZHANG Cun-zhou, XU Xiao-xuan. Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well[J]. 发光学报, 2010,31(5): 619-623
魏国华, 王斌, 李俊梅, 曹学伟, 张存洲, 徐晓轩. In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制[J]. 发光学报, 2010,31(5): 619-623 DOI：

WEI Guo-hua, WANG Bin, LI Jun-mei, CAO Xue-wei, ZHANG Cun-zhou, XU Xiao-xuan. Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well[J]. 发光学报, 2010,31(5): 619-623 DOI：

摘要

测量了不同阱宽In

0.2

0.8

As/GaAs单量子阱的PL谱的峰值波长和荧光谱线半峰全宽随温度的变化。利用Varshni公式对实验峰值波长进行拟合

得到了新的参数。结果表明

无位错应变量子阱带隙仍具有其体材料的特性:荧光谱线半峰全宽随温度升高迅速展宽

这主要归因于声子关联作用增强和激子热离化为自由载流子所致;阱宽越窄荧光峰值能量越高

将其与量子尺寸效应的理论计算结果进行了比较。文中还考察了谱线半峰全宽和阱宽的关系

利用合金无序对这一现象进行了解释。

Abstract

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references

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