In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制

魏国华; 王 斌; 李俊梅; 曹学伟; 张存洲; 徐晓轩

doi:null

您当前的位置：

首页 >

文章列表页 >

In_0.2Ga_0.8As/GaAs单量子阱PL谱温度特性及其机制

论文 | 更新时间：2020-08-12

- In_0.2Ga_0.8As/GaAs单量子阱PL谱温度特性及其机制
- Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In_0.2Ga_0.8As/GaAs Single Quantum Well
- 发光学报 2010年31卷第5期页码：619-623
- 作者机构：
  
  1. 南开大学物理科学学院天津,300071
  2. 南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室, 天津 300457
- 作者简介：
- 基金信息：
  
  天津市科技支撑计划重点项目基金(07ZCKCGX03600)();南开大学新教师科研启动基金(J02034)();南开大学物理学基地教学基金(J0730315)();南
- DOI：
  中图分类号： O472.3;O482.31
- 纸质出版日期：2010-9-21，
  
  网络出版日期：2010-9-21，
  
  收稿日期：2009-12-29，
  
  修回日期：2010-1-28，
扫描看全文
魏国华, 王斌, 李俊梅, 曹学伟, 张存洲, 徐晓轩. In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制[J]. 发光学报, 2010,31(5): 619-623

WEI Guo-hua, WANG Bin, LI Jun-mei, CAO Xue-wei, ZHANG Cun-zhou, XU Xiao-xuan. Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well[J]. 发光学报, 2010,31(5): 619-623
魏国华, 王斌, 李俊梅, 曹学伟, 张存洲, 徐晓轩. In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制[J]. 发光学报, 2010,31(5): 619-623 DOI：

WEI Guo-hua, WANG Bin, LI Jun-mei, CAO Xue-wei, ZHANG Cun-zhou, XU Xiao-xuan. Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well[J]. 发光学报, 2010,31(5): 619-623 DOI：

摘要

测量了不同阱宽In

0.2

0.8

As/GaAs单量子阱的PL谱的峰值波长和荧光谱线半峰全宽随温度的变化。利用Varshni公式对实验峰值波长进行拟合

得到了新的参数。结果表明

无位错应变量子阱带隙仍具有其体材料的特性:荧光谱线半峰全宽随温度升高迅速展宽

这主要归因于声子关联作用增强和激子热离化为自由载流子所致;阱宽越窄荧光峰值能量越高

将其与量子尺寸效应的理论计算结果进行了比较。文中还考察了谱线半峰全宽和阱宽的关系

利用合金无序对这一现象进行了解释。

Abstract

The technique of photoluminescence(PL) spectra is an important method for studying the properties of semiconductors and quantum wells since its high sensitiveness

convenience and non-destructive. This technique was used to study the single quantum well(QW) of In

0.2

0.8

As/GaAs in this paper.Different PL spectra were reported under different temperature

which ranged from 125 K to 260 K for a certain sample

and the PL spectra of the samples with different quantum well width were also reported.The paper reported that

for a certain sample

the peak of its PL spectra moved towards long wavelengh ranges with the temperature increa-sing

which means that the band gap of the SQW becomes narrower. Detail consideration suggested that this property was able to be described by the equation of Varshni for the bulk materials. So

the SQW is similar to its bulk material at this point. This was mainly because within certain thickness of SQW

there was no lattice misfit dislocation

and the fundamental structure of the energy gap will not change. It was also reported that

at certain temperature

the narrower was the SQW

the wider was its band gap. We performed a brief calculation by solve Schrdinger equation

and found that the experimental result fitted to the theoretical calculation.The relationship between full width at half maximum (FWHM) of PL peak and temperature of a certain sample and the relationship between (FWHM) and SQW width of different samples were also reported

at the same time

theoretical explanation was presented for these phenomenon.

关键词

In0.2Ga0.8As/GaAs单量子阱PL谱温度荧光峰半峰全宽

Keywords

In0.2Ga0.8As/GaAsSQWPL spectratemperatureFWHM

references

Wu Zhengyun, Wang Xiaojun, Huang Qisheng. Study of line broadening of photovoltaic spectra in strained InGaAs/GaAs quantum well

. Chin. J. Semiconductors (半导体学报), 1998, 19 (12):881-885 (in Chinese).

Xu Qiang, Xu Zhongying, Zhuang Weihua. Investigation of optical properties of strained layer coupled quantum wells in InGaAs/GaAs

. Chin. J. Infrared Res (红外研究), 1989, 8 (2):103-110 (in Chinese).

Huang Y S, Qiang H, Pollak Fred H. Temperature dependence of the photoreflectance of the strained layer (001) In0.21Ga0.79As/GaAs single quantum well

. J. Appl. Phys.,1991, 70 (12):7537-7542.

Xu Zhongying, Xu Jizong, Ge Weikun, et al. Optical investigation of InGaAs-GaAs strained layer quantum well structures

. Chin. J. Semiconductors (半导体学报), 1988, 9 (6):563-569 (in Chinese).

Fan Wei, Xu Xiaoxuan, Sun Xiufeng. Temperature dependence of PL spectra of InGaAs/GaAs single quantum well properties

. The J. Light Scattering (光散射学报), 2008, 20 (2):182-184 (in Chinese).

Jia Guozhi, Yao Jianghong, Shu Yongchun, et al. Influence of growth temperature and structure parameters on optical characteristic of InGaAs/GaAs quantion wells

. Chin. J. Lumin.(发光学报), 2008, 29 (2):235-239 (in Chinese).

Zhang Tiemin, Miao Guoqing, Song Hang, et al. Effect of buffer layer growth temperature on structural and electrical properties of In0.82Ga0.08As with two step growth technique

. Chin. J. Lumin. (发光学报), 2009, 30 (6):787-791 (in English).

Yu Yongqin, Huang Bobiao, Wei Jiyong, et al. Quantum confinement effect on PL spectrum of InGaAs/AlGaAs Multi-quantum wells

. Chin. J. Quantum Electronics (量子电子学报), 2003, 20 (3):345-349 (in Chinese).

Yan Changling, Qin Li, Ning Yongqiang, et al. Calculation of energy band structure of InGaAs/GaAs quantum well

.Laser Journal (激光杂志), 2004, 25 (5):29-31 (in Chinese).

Varshni Y P. Temperature dependence of the energy gap in semiconductors

. Physica, 1967, 34 (1):149-154.

El Allali M, Sorensen C B, Veje E, et al. Experimental determination of the GaAs and Ga1-xAlxAs band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region

. Phys. Rev. B, 1993, 48 (7):4398-4404.

Botha J R, Leitch A W R. Temperature dependence of photoluminescence properties and band gap energy of InxGa1-xAs/GaAs qwantum wells

. J. Electronic Materials, 2000, 29 (12):1362-1371.

Zhang Guangyin, Zhang Cunzhou, Zhang Baozheng. Fundamental reflection spectra of Cu2O and Ge crystals

. Acta Physica Sinica (物理学报), 1965, 21 (2):324-328 (in Chinese).

Shen Xuechu. Spectra and Optical Properties of Semiconductors (半导体光谱与光学性质)

. The Second Edition, Beijing: Science Press, 2002.

Shen W Z, Tang W G, Shen S C, et al. Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells

. Appl. Phys. Lett., 1994, 65 (21):2728-2730.

Singh J, Bajaj K K. Role of Interface roughness and alloy disorder in photoluminescence in quantum-well structure

. J. Appl. Phys., 1985, 57 (12):5433-5437.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

利用离子激发发光研究低温条件下ZnO发光行为

衬底温度对共蒸发法制备Cu₂ZnSnSe₄太阳电池的影响

高亮度大功率半导体激光器光纤耦合模块

温度对4管像素结构CMOS图像传感器性能参数的影响

高功率密度激光二极管叠层散热结构的热分析