退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响

张 侠; 刘渝珍; 康朝阳; 徐彭寿; 王家鸥; 奎热西

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退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响

论文 | 更新时间：2020-08-12

- 退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响
- Effects of Annealing Atmosphere and Temperature on the Structure and Photoluminescence of ZnO Films Prepared by Pulsed Laser Deposition
- 发光学报 2010年31卷第5期页码：613-618
- 作者机构：
  
  1. 中国科学技术大学,安徽合肥,230026
  2. 中国科学院研究生院北京,100039
  3. 中国科学院高能物理研究所北京,100049
- 作者简介：
- 基金信息：
  
  Projects supported by National Natural Science Foundation (50532070)()
- DOI：
  中图分类号： O482.31
- 纸质出版日期：2010-9-21，
  
  网络出版日期：2010-9-21，
  
  收稿日期：2009-10-19，
  
  修回日期：2009-11-26，
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张侠, 刘渝珍, 康朝阳, 徐彭寿, 王家鸥, 奎热西. 退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响[J]. 发光学报, 2010,31(5): 613-618

ZHANG Xia, LIU Yu-zhen, KANG Chao-yang, XU Peng-shou, WANG Jia-ou, KUI Re-xi. Effects of Annealing Atmosphere and Temperature on the Structure and Photoluminescence of ZnO Films Prepared by Pulsed Laser Deposition[J]. 发光学报, 2010,31(5): 613-618
张侠, 刘渝珍, 康朝阳, 徐彭寿, 王家鸥, 奎热西. 退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响[J]. 发光学报, 2010,31(5): 613-618 DOI：

ZHANG Xia, LIU Yu-zhen, KANG Chao-yang, XU Peng-shou, WANG Jia-ou, KUI Re-xi. Effects of Annealing Atmosphere and Temperature on the Structure and Photoluminescence of ZnO Films Prepared by Pulsed Laser Deposition[J]. 发光学报, 2010,31(5): 613-618 DOI：

摘要

采用脉冲激光沉积技术在Si/蓝宝石衬底上制备了ZnO薄膜

结合快速退火设备研究了不同退火温度(500~900 ℃)及退火气氛(N

)对薄膜的结构及其发光性能的影响。并优化条件得到具有最小半峰全宽及最大晶粒尺寸的薄膜。X射线衍射(XRD)结果表明:氮气氛下退火的ZnO薄膜最佳退火温度为900 ℃;氧气氛下退火的ZnO薄膜最佳退火温度为800 ℃。红外(IR)光谱中

退火后Zn-O特征振动峰红移

说明在退火过程中

原子重新排布后占据较低能量位置;同样的退火温度下

氮气氛下退火的薄膜质量更优。同步辐射光电子能谱(synchrotron-based XPS)分别表征了未退火及N

下900 ℃退火的ZnO薄膜

分峰拟合结果表明氧气氛下退火产生更多的氧空位。结构表征结合光致发光(PL)谱表明绿光的发光峰与氧空位有关。

Abstract

Thin ZnO films were grown on silicon (111)/sapphire substrate via pulsed laser deposition technique and then some of the samples were treated with different rapid thermal annealing (RTA) conditions

such as annealing temperature ranging of 500 to 900 ℃ and annealing ambience(nitrogen and oxygen). Finally

these samples were characterized with X-ray diffraction (XRD)

X-ray photoelectron spectroscopy (XPS)

IR and photoluminescence (PL)

respectively. It was observed that the quality and the grain size of thin ZnO films increased after annealing. Moreover

at the same lower annealing temperature

the films annealed under nitrogen ambience showed better qualities and few oxygen vacancies than those annealed under oxygen ambience. The experiment showed that the best annealing temperature under nitrogen ambience was 900 ℃ and the optimum annealing temperature under oxygen ambience was 800 ℃. Furthermore

as oxygen vacancies decreased

stronger green photoluminescence was detected

possibly related to the contents of the oxygen vacancies.

关键词

ZnO薄膜快速退火光致发光X射线光电子能谱氧空位

Keywords

thin ZnO filmsrapid thermal annealingphotoluminescenceXPSoxygen vacancies

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