氧氩比对钴掺杂氧化锌薄膜光电性能的影响

袁 明; 李宏建; 李雪勇; 徐仁伯; 周子游; 王继飞

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氧氩比对钴掺杂氧化锌薄膜光电性能的影响

论文 | 更新时间：2020-08-12

- 氧氩比对钴掺杂氧化锌薄膜光电性能的影响
- Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO
- 发光学报 2010年31卷第4期页码：498-502
- 作者机构：
  
  1. 中南大学物理科学与技术学院, 湖南长沙 410083
  2. 中南大学材料科学与工程学院,湖南长沙,410083
- 作者简介：
- 基金信息：
  
  湖南省自然科学基金(05JJ2034)();中南大学科学基金(0601059)资助项目()
- DOI：
  中图分类号： O472;O482.31
- 纸质出版日期：2010-8-27，
  
  网络出版日期：2010-8-27，
  
  收稿日期：2009-9-15，
  
  修回日期：2009-11-30，
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袁明, 李宏建, 李雪勇, 徐仁伯, 周子游, 王继飞. 氧氩比对钴掺杂氧化锌薄膜光电性能的影响[J]. 发光学报, 2010,31(4): 498-502

YUAN Ming, LI Hong-jian, LI Xue-yong, XU Ren-bo, ZHOU Zi-you, WANG Ji-fei. Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO[J]. 发光学报, 2010,31(4): 498-502
袁明, 李宏建, 李雪勇, 徐仁伯, 周子游, 王继飞. 氧氩比对钴掺杂氧化锌薄膜光电性能的影响[J]. 发光学报, 2010,31(4): 498-502 DOI：

YUAN Ming, LI Hong-jian, LI Xue-yong, XU Ren-bo, ZHOU Zi-you, WANG Ji-fei. Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO[J]. 发光学报, 2010,31(4): 498-502 DOI：

摘要

以氧化锌陶瓷靶和金属钴靶为靶材

利用磁控共溅射方法制备钴掺杂氧化锌(Co-ZnO)薄膜。研究了氧氩比对薄膜的结构、光学和电学性能的影响。结果表明:薄膜具有类似于ZnO的六方纤锌矿结构

并沿

轴择优生长;当氧氩比为2 ∶ 8时

薄膜具有较好的纳米晶粒和表面结构

其霍尔迁移率为2.18810

/Vs

最小电阻率为1.32610

其薄膜透光率最高

且在紫外区有一个相对较强的发射峰。

Abstract

The Co doped thin ZnO films were prepared on glass substrates using RF magnetron sputtering method. The influence of O-Ar ratio on the structural

electrical and optical properties of the films have been studied. The films are single phase and have wurtzite structure with

-axis orientation

and have good textures with little nano-crystalline grains and smooth surface when O-Ar ratio is 2 ∶ 8. The concentration of carriers of these films decreases as O-Ar ratio decreases

but as the Hall mobilities increased the Hall resistance is the lowest when O-Ar ratio is 2 ∶ 8. The film deposited at the O-Ar ratio of 2 ∶ 8 shows a highest transmittance and has an emission peak.

关键词

Co-ZnO薄膜电阻率霍尔迁移率透射光谱光致发光谱

Keywords

thin ZnO ∶ Co filmresistivityhall mobilitytransmittion spectrumphotoluminescent spectrum

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