溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

祐卫国; 张 勇; 李 璟; 杨 峰; CHENG C H; 赵 勇

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溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

论文 | 更新时间：2020-08-12

- 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响
- Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering
- 发光学报 2010年31卷第4期页码：503-508
- 作者机构：
  
  1. 西南交通大学超导研究开发中心材料先进技术教育部重点实验室,四川成都,610031
  2. School of Materials Science and Engineering, University of New South Wales,NSW Sydney,Australia,2052
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50588201,50872116)();国家重大基础研究项目"();973"();(2007CB616906)();国家高科技项目&
- DOI：
  中图分类号： O482.31
- 纸质出版日期：2010-8-27，
  
  网络出版日期：2010-8-27，
  
  收稿日期：2009-9-7，
  
  修回日期：2009-12-24，
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祐卫国, 张勇, 李璟, 杨峰, CHENG C H, 赵勇. 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J]. 发光学报, 2010,31(4): 503-508

YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. 发光学报, 2010,31(4): 503-508
祐卫国, 张勇, 李璟, 杨峰, CHENG C H, 赵勇. 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J]. 发光学报, 2010,31(4): 503-508 DOI：

YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. 发光学报, 2010,31(4): 503-508 DOI：

摘要

用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜

通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示

所制备的ZnO薄膜为六角纤锌矿结构

具有沿

轴的择优取向;溅射压强

=0.6 Pa

氩氧比Ar/O

=20/5.5 sccm时

(002)晶面衍射峰强度和平均晶粒尺寸较大

(O02)XRD峰半峰全宽(FWHM)最小

光致发光紫外峰强度最强。

Abstract

Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction (XRD)

scanning electron microscopy (SEM) and F-7100 photoluminescence (PL) spectroscopy. The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates.When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O

=20/5.5 sccm

the (002) plane diffraction peak intensity and the grain size are larger

the FWHM of (002) peak is the smallest

UV photoluminescence peak intensity is the strongest.

关键词

ZnO薄膜射频反应磁控溅射溅射压强氩氧比光致发光

Keywords

ZnO filmsRF reactive magnetron sputteringsputtering pressureargon-oxygen ratiophotoluminescence

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