InxGa1-xN/InyGa1-yN多量子阱结构 发光特性的测量与分析

郭洪英; 潘定珍; 范俊卿; 马 旭; 戴振宏; 孙元平

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In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析

论文 | 更新时间：2020-08-12

- In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析
- Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures
- 发光学报 2009年30卷第6期页码：797-801
- 作者机构：
  
  烟台大学光电信息科学技术学院,山东烟台,264005
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 纸质出版日期：2009-12-30，
  
  网络出版日期：2009-12-30，
  
  收稿日期：2009-1-22，
  
  修回日期：1900-1-2，
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郭洪英, 潘定珍, 范俊卿, 等. In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析[J]. 发光学报, 2009,30(6):797-801.

GUO Hong-ying, PAN Ding-zhen, FAN Jun-qing, et al. Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures[J]. Chinese Journal of Luminescence, 2009,30(6):797-801.
郭洪英, 潘定珍, 范俊卿, 等. In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析[J]. 发光学报, 2009,30(6):797-801. DOI：

GUO Hong-ying, PAN Ding-zhen, FAN Jun-qing, et al. Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures[J]. Chinese Journal of Luminescence, 2009,30(6):797-801. DOI：

摘要

利用MOCVD方法在蓝宝石衬底上生长了In

1-x

N/In

1-y

N多量子阱结构外延层

并用变温光致发光(PL)光谱、选择激发光谱以及激发(PLE)光谱等手段研究了该结构的量子效率、多峰效应的起源以及峰位随温度变化等信息。变温PL光谱的结果表明:在温度从30 K变化到300 K时

其峰值强度只下降了1.36倍且发光波长发生了蓝移。通过选择激发光谱证明了其发光峰位的独立性。PLE结果表明了GaN和势垒层的Stokes位移很小

但是In

1-x

N阱层的Stokes位移变化很大。同时

提出了一种可同时获得多个吸收边的数据处理方法。

Abstract

The In

1-x

N/In

1-y

N multiple quantum well structures were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The quantum efficiency

multi-emission peaks effects and peak-shift information were observed by temperature dependent photoluminescence (PL) spectra

selective excitation PL spectra and PL excitation spectra. The temperature dependent PL spectra showed that the intensity of the main emission peaks decreased only by a factor of 1.36 and peak position has a blue-shift when temperature increases in 30~300 K. Selective excitation PL spectra showed that every peak appeared in PL spectra is separate. The PLE result shows a small Stokes shift for GaN and barrier layer while it is larger for the well layers. A fitting method was also suggested to obtain several absorption edges simultaneously.

关键词

InGaN光致发光激发光谱

Keywords

InGaNphotoluminescenceexcitation spectrum

references

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