ZnO/SiO<SUB>2</SUB> 复合薄膜的光学性能

李启源; 魏长平; 孙小飞

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ZnO/SiO₂ 复合薄膜的光学性能

论文 | 更新时间：2020-08-12

- ZnO/SiO₂ 复合薄膜的光学性能
- Optical Properties of ZnO/SiO₂ Composite Film
- 发光学报 2009年30卷第3期页码：385-388
- 作者机构：
  
  长春理工大学材料科学与工程学院,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 纸质出版日期：2009-6-30，
  
  网络出版日期：2009-6-30，
  
  收稿日期：2008-8-12，
  
  修回日期：1900-1-2，
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李启源, 魏长平, 孙小飞. ZnO/SiO₂ 复合薄膜的光学性能[J]. 发光学报, 2009,30(3):385-388.

LI Qi-yuan, WEI Chang-ping, SUN Xiao-fei. Optical Properties of ZnO/SiO₂ Composite Film[J]. Chinese Journal of Luminescence, 2009,30(3):385-388.
李启源, 魏长平, 孙小飞. ZnO/SiO₂ 复合薄膜的光学性能[J]. 发光学报, 2009,30(3):385-388. DOI：

LI Qi-yuan, WEI Chang-ping, SUN Xiao-fei. Optical Properties of ZnO/SiO₂ Composite Film[J]. Chinese Journal of Luminescence, 2009,30(3):385-388. DOI：

摘要

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO

复合薄膜

分别用XRD、TEM、SEM对样品的结构和形貌进行表征

并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明

样品经500 ℃退火处理生成了SiO

和ZnO

其晶粒尺寸为18.7 nm

薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低

禁带宽度减小

光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带

并随ZnO含量的增加而增强

它们分别来自ZnO的电子-空穴复合发光和缺陷发光

及ZnO/SiO

复合薄膜双层结构的缺陷发光。

Abstract

ZnO/SiO

composite film was deposited on glass substrates by means of sol-gel method. The crystal structure and morphology of samples were characterized by X-ray diffraction (XRD)

transmission electron microscope (TEM) and scanning electron microscope (SEM)

respectively. The transmittance and photoluminescent properties of ZnO/SiO

composite film with different concentration of ZnO were studied. The results indicated that the composite film is composed of SiO

and ZnO two kinds of oxide after annealed in air at 500 ℃

and the crystal particle size calculated by Scherrer formula is 18.7 nm. The results of SEM showed that two-layer structure can be observed clearly. Selected area diffraction (SAED) indicated that the structure of ZnO/SiO

composite film is polycrystal. Transmittance of film decreases with the content of ZnO increasing

and the band gap diminishes from 3.5 eV to 3.2 eV

which indicates that optical absorption edge moved to long wavelength. The PL spectra show there are two luminescence locations under 355 nm light excitation

one is the broad emission peaked at 384 nm and the other is the blue band peaked at 440 nm. Both of them are attributed to the electron-hole recombination and defect luminescence of ZnO

respectively. In this paper

the coating method is that two kinds of solution are coated

respectively. So

the two-layer structure of ZnO/SiO

composite film must be considered. As there is a ZnO/SiO

interface in the two-layer film

so the structure defect

bond defect and the deep level centers caused by crystal lattice aberrance would be formed after annealed at 500 ℃

these defects and deep level centers can influence the photoluminescent properties of composite film in a certain extent. At the same time

defect center (O—Si—O) of oxygen deficiency in SiO

could contribute to the blue emission

too.

关键词

复合薄膜溶胶-凝胶透过率光致发光

Keywords

composite filmsol-geltransmittancePL

references

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. Chen Yiqing, Zhang Kun, Wang Bing, et al. Vapor-phase synthesis and photoluminescence of amorphous SiO2 nanowires [J]. J. Function Materials (功能材料), 2004, 25 (2):134-138 (in Chinese).

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DOI：

摘要

Abstract

关键词

Keywords

references

ZnO/SiO₂ 复合薄膜的光学性能

Optical Properties of ZnO/SiO₂ Composite Film