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1. 华侨大学 信息科学与工程学院, 福建 泉州 362021
2. 福建省泉州市紫欣光电有限公司
3. 福建省厦门光莆电子有限公司
收稿:2008-07-31,
修回:1900-1-2,
网络首发:2009-06-30,
纸质出版:2009-06-30
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林介本, 郭震宁, 陈丽白, 等. 瓦级大功率InGaN蓝光LED的光色电特性[J]. 发光学报, 2009,30(3):379-384.
LIN Jie-ben, GUO Zhen-ning, CHEN Li-bai, et al. Watt-level High Power InGaN-based Blue LED Photometric, Chromatric and Electric Characteristics[J]. Chinese Journal of Luminescence, 2009, 30(3): 379-384.
封装并测量了瓦级大功率InGaN蓝色发光二极管(LED)在不同正向电流
I
F
驱动下的光通量、电功率、发光效率、发射光谱和色品坐标等参数的变化。研究表明
光通量与电功率随
I
F
的增大呈亚线性增加
而发光效率
η
则下降。当
I
F
从50 mA一直增大到450 mA左右时
发射光谱的峰值波长
λ
p
随
I
F
的增加发生蓝移
蓝移现象可能与InGaN蓝光LED芯片在较大电流时能带被拉平以及In成分的作用有关。当
I
F
大于500 mA或800 mA后
λ
p
又发生红移
红移现象可能与大电流注入下InGaN蓝光LED芯片产生的热效应以及电子-空穴对辐射复合有关。此外
光谱的半峰全宽(FWHM)产生宽化现象
色坐标
x和y
值也发生变化。
paper
. Katsuya Kobashi, Tsunemasa Taguchi. Warm white LEDs lighting over Ra=95 and its applications [J]. SPIE, 2007, 6486 :648610-1-6.
. Fang Fubo, Wang Yaohao, Song Daihui, et al. Spectroscopic analysis of white LED attenuation [J]. Chin. J. Lumin.(发光学报), 2008, 29 (2):353-356 (in Chinese).
. Wu Qing, Huang Xian, Liu Li, et al. The corresponding relation between the color coordinate and the luminous flux [J]. Chin. J. Lumin. (发光学报), 2007, 28 (5):736-740 (in Chinese).
. Wang Jian, Huang Xian, Liu Li, et al. Effect of temperature and current on LED luminous efficiency [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):358-362 (in Chinese).
. Naoki Kimura, Ken Sakuma, Syunichiro Hirafune. Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode [J]. Appl. Phys. Lett., 2007, 90 (5):051109-1-3.
. Xie Rongjun, Naoto Hirosaki, Naoki Kimura, et al. 2-phosphor-converted white-emitting diodes using oxynitride/nitride phosphors [J]. Appl. Phys. Lett., 2007, 90 (19):191101-1-3.
. Li Xiaobai. Development of GaN-based solid-state devices [J]. Semiconductor Technology (半导体技术), 2001, 26 (5):20-25 (in Chinese).
. Rossia F, Armania N, Salviatia G, et al. The role of Mg complexes in the degradation of InGaN-based LEDs [J]. Super-lattices and Microstructures, 2004, 36 (4-6):859-868.
. Sugahara T, Sato H, Hao M, et al. Direct evidence that dislocations are non-radiative recombination centers in GaN [J]. Jpn. J. Appl. Phys. Part 2, 1998, 37 (4A):L398-L400.
. Lei Yong, Fan Guanghan, Liao Changjun, et al. Research on the thermal property of powerful white LEDs [J]. J. Opto-electronics & Laser (光电子·激光), 2006, 17 (8):945-947 (in Chinese).
. Lin Liang, Chen Zhizhong, Chen Ting, et al. Characteristics of the accelerated aging white LEDs [J]. Chin. J. Lumin.(发光学报), 2005, 26 (5):617-620 (in Chinese).
. Xu Xiaoliang, Shi Chaoshu. Defects and impurities in GaN [J]. Progress in Phys. (物理学进展), 2001, 21 (1):1-11 (in Chinese).
. Lee Y J, Lin P C, Kuo H C, et al. Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes [J]. Appl. Phys. Lett., 2007, 90 (16):161115-1-3.
. Wang X H, Jia H Q, Guo L W, et al. White light-emitting diodes based on a single InGaN emission layer [J]. Appl. Phys. Lett., 2007, 91 (16):161912-1-3.
. Sala F D, Carlo A D, Lugli P, et al. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J]. Appl. Phys. Lett., 1999, 74 (14):2002-2004.
. Yu Lisheng. Semiconductor Hetero-junction Physics [M]. 2nd Edtion, Beijing: Science Press, 2006, 170.
. Fang Rongchuan. Solid Statc Spectroscopy [M]. Hefei: University of Science and Technology of China Press, 2001, 127-132.
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