铟磷共掺杂p型氧化锌薄膜形成机理和性质

陈足红; 姚 斌; 郑昌佶; 杨 通; 赵婷婷; 单崇新; 张振中; 李炳辉; 张吉英; 申德振

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铟磷共掺杂p型氧化锌薄膜形成机理和性质

论文 | 更新时间：2020-08-12

- 铟磷共掺杂p型氧化锌薄膜形成机理和性质
- Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film
- 发光学报 2009年30卷第1期页码：12-18
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
  2. 中国科学院研究所院北京,100049
  3. 吉林大学物理学院,吉林长春,130021
- 作者简介：
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陈足红, 姚斌, 郑昌佶, 等. 铟磷共掺杂p型氧化锌薄膜形成机理和性质[J]. 发光学报, 2009,30(1):12-18.

CHEN Zu-hong, YAO Bin, ZHENG Chang-ji, et al. Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film[J]. Chinese Journal of Luminescence, 2009,30(1):12-18.
陈足红, 姚斌, 郑昌佶, 等. 铟磷共掺杂p型氧化锌薄膜形成机理和性质[J]. 发光学报, 2009,30(1):12-18. DOI：

CHEN Zu-hong, YAO Bin, ZHENG Chang-ji, et al. Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film[J]. Chinese Journal of Luminescence, 2009,30(1):12-18. DOI：

摘要

利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO ∶ In,P),所用靶材为掺杂五氧化二磷(P,2,O,5,)和氧化铟(In,2,O,3,)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%,溅射气体为Ar和O,2,的混合气体。原生ZnO薄膜是绝缘的, 600 ℃退火5 min后导电类型为n型,而800 ℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4 Ω·cm, 1.6×10,17, cm,-3, 和3.29 cm,2,·V,-1,·s,-1,。X射线衍射测量结果表明所有样品都只有(002)衍射峰,并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移,意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此,铟磷共掺ZnO薄膜中,In和P都取代Zn,并且P,Zn,与2个锌空位(V,Zn,)形成P,Zn,-2V,Zn,复合受主,薄膜表现为p型。

Abstract

In,P codoped ZnO ∶ (In,P)] films were grown on quartz by radio frequency magnetron sputtering, the ZnO target was mixed with 1.5% P,2,O,5, and 0.3% In,2,O,3,and the mixing gas of Ar and O,2, was used as the sputtering gas. The as-grown ZnO ∶ (In,P) film shows insulating conduction, but n-type conductivity after annealing at 600 ℃ for 5 min, and p-type conduction after annealing at 800 ℃ for 5 min. The p-type ZnO:(In,P) has a resistivity of 12.4 Ω·cm, a carrier concentrativity of 1.6×10,17, cm,-3, and a Hall mobility of 3.29 cm,2,·V,-1,·s,-1, .XRD mea-surement indicates that both the as-grown and annealed ZnO ∶ (In,P) films have a preferred (002) orientation and larger (002) diffraction angles than that of undoped ZnO prepared at the same conditions, implying that both In and P occupy Zn site in the ZnO ∶ (In,P). The XPS result confirm that the P substitutes Zn site (P,Zn,) but not O site in the ZnO ∶ (In,P). Therefore, it was suggested that both In and P substitute at Zn sites in the ZnO ∶ (In,P) and the P,Zn, combines with two Zn vacancies(V,Zn,) to form a P,Zn,-2V,Zn, acceptor complex, which is responsible to p-type conductivity of the ZnO ∶ (In,P).

关键词

氧化锌共掺射频磁控溅射XPS

Keywords

ZnOcodopingRF magnetron sputteringXPS

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