GaAs microtips array are fabricated by selective liquid phase epitaxy(LPE).Scanning electron microscopy(SEM) images show that the microtip is pyramid-like with the angle of the opposite sides about 71°.The height of the GaAs microtip is depended on the size of the growth window.In the experiment

the growth window of 60 μm×60 μm results in the microtip height of 42 μm.Furthermore

the field emission property of the tips array is also investigated.Aturn-on field of 5.1 V/μm and a good current stability are obtained.The field emission current increases from 6 μA to 74 μA when the electric field changes from 8.0 V/μm to 11.9 V/μm.The current fluctuation is found not to exceed 3% over a period of 3 hours.Furthermore

the non-linear field emission F-N curve of GaAs microtips array is also studied.The influence of the surface states of electrons and the field penetration are considered to be the reason for the non-linear field emission F-N curve.This achievement reported here represents a significant step towards the application of GaAs microtips array as a field emission material.