The semiconductor solid phase epitaxial model of continuous laser-annealing is used to simulate the laser-annealing process of monocrystalline silicon at the continuous Nd:YAG laser.Specially

at lower power density of laser

quasi-static model is used to simulate the radial heat dissipation from irradiated region to nonirradiated regions.A partial linear method is used to deal with non-homogeneous nonlinear equation of heat conduction.Then a hidden-form differential equation is gotten.Using the program of chasing method to solve the equation

the distribution of temperature(T(z

t))at time and space can be worked out accurately at the condition of adiathermic boundary.Furthermore

the thickness of recrystallization of laser-annealing is gotten.At laser wave =1.06m

the power density of laser I

0

=700W/cm

2

and the preheated temperature T

0

=523K

the result is that the temperature of surface reaches to about 1290K and the thickness of recrystallization is about 0.5m after 0.7sec.