Li Guiying, Li Yongliang, Wang Yafei, Yang Xizhen, Sun Yinguan. DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS[J]. Chinese Journal of Luminescence, 1999,20(1): 5-6
Li Guiying, Li Yongliang, Wang Yafei, Yang Xizhen, Sun Yinguan. DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS[J]. Chinese Journal of Luminescence, 1999,20(1): 5-6DOI:
Using chemical etching combined with SEM measurement
the dislocation densities
N
D
of the epilayer and substrate in GaPⅩⅣN LPE wafers from different sources are carried out. The brightness of the samples are measured also. The results indicate that the brightness increases as decreasing of the