具有高光开关比和高响应度的单根In₂O₃纳米线紫外光电晶体管

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "具有高光开关比和高响应度的单根In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线紫外光电晶体管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Single In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "陈", "givenname": "雪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Xue", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "陈雪(1992－), 女, 吉林长春人, 博士研究生, 2015年于吉林师范大学获得学士学位, 主要从事纳米光电子器件方面的研究。E-mail:streamchen520@yahoo.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "陈雪" } ] }, { "name": "text", "data": "(1992－), 女, 吉林长春人, 博士研究生, 2015年于吉林师范大学获得学士学位, 主要从事纳米光电子器件方面的研究。E-mail:" }, { "name": "text", "data": "streamchen520@yahoo.com" } ] ] } ], "email": "streamchen520@yahoo.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "魏", "givenname": "志鹏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WEI", "givenname": "Zhi-peng", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "WEI Zhi-peng, E-mail:zpweicust@126.com", "data": [ { "name": "text", "data": "WEI Zhi-peng, E-mail:zpweicust@126.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "魏志鹏(1978－), 男, 吉林长春人, 博士, 教授, 博士研究生导师, 2008年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事半导体光电子器件方面的研究。E-mail:zpweicust@126.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "魏志鹏" } ] }, { "name": "text", "data": "(1978－), 男, 吉林长春人, 博士, 教授, 博士研究生导师, 2008年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事半导体光电子器件方面的研究。E-mail:" }, { "name": "text", "data": "zpweicust@126.com" } ] ] } ], "email": "zpweicust@126.com", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "", "text": "长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022", "data": [ { "name": "text", "data": "长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022" } ] }, { "lang": "en", "label": "", "text": "State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线由于其独特性质而成为紫外光电探测器的潜力候选者，目前，In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线基紫外光电探测器已被广泛研究，但较大的暗电流限制了其进一步应用。本文制备了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线紫外光电晶体管，通过背栅电压的调制作用，器件中的暗电流几乎被全部耗尽，同时，由于光照下的阈值偏移，栅压对光电流的影响较小。最终得到具有高光开关比（1.07×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "）和高响应度（5.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A/W）的单根In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线紫外光电晶体管，性能明显优于之前报道的In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构光电探测器。本工作促进了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线在下一代纳米光电子器件和集成电路中的应用。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Owing to the unique properties, In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires have become potential candidates for ultraviolet photodetectors. To date, In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires-based UV photodetectors have been extensively studied. However, the large dark current limits its further applications. In this paper, a single In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire ultraviolet phototransistor is performed. Through the modulation of the back gate voltage, the dark current is almost completely depleted. At the same time, the threshold voltage shows a shift under illumination, leading to little dependence between gate voltage and photocurrent. Finally, a single In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire ultraviolet phototransistor with a high optical on-off ratio of 1.07×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " and a high responsivity of 5.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A/W was obtained, which is better than the previously reported In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanostructured optoelectronic devices. This work promotes the application of In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires in the next generation of nano-optoelectronic devices and integrated circuits." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线" } ], [ { "name": "text", "data": "紫外" } ], [ { "name": "text", "data": "光电晶体管" } ], [ { "name": "text", "data": "响应度" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire" } ], [ { "name": "text", "data": "ultraviolet" } ], [ { "name": "text", "data": "phototransistor" } ], [ { "name": "text", "data": "responsivity" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "一维氧化铟(In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")纳米线由于具有优秀的化学稳定性、较宽的带隙、高光学透明性以及高场效应载流子迁移率，被认为是下一代电子器件、传感器、紫外光电器件的杰出候选者" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "b1", "b2", "b3", "b4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，基于In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的紫外光电探测器已被报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "b2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": ", " }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "b5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "b5", "b6", "b7" ], "text": "5-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，由于其具有较大的暗电流，In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电探测器通常表现出较小的光开关比，严重限制了光电探测器探测微弱信号的能力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在先前的报道中，研究人员发现在基于In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的场效应晶体管中，其通常表现为耗尽型" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，意味着场效应晶体管为常开器件，这也是In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线紫外光电探测器暗电流较大的原因。通过场调制效应，可将晶体管由开态调整为关态，此时In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线场效应晶体管将具有极低的输出电流。然而，目前报道的In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构光电晶体管性能较低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这和光照下器件的光电流也被栅极电场抑制具有很大关系。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过化学气相沉积法(Chemical vapor deposition, CVD)生长了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线，并将其制备成In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管及光电晶体管。研究发现，通过场效应调制，In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线中的暗电流几乎被全部耗尽，但光电流却没有明显降低，最终得到的光电晶体管在254 nm光照下具有高光开关比(~10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": ")、高响应度(5.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A/W)和高比探测率(9.89×10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " cm·Hz" }, { "name": "sup", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，性能优于In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管，同时高于之前报道的In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构光电探测器。研究结果充分表明了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电晶体管在光电探测领域的优越性，推进了其进一步应用。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "样品制备" } ], "level": "2", "id": "s2-1" } }, { "name": "p", "data": [ { "name": "text", "data": "通过CVD方法在卧式管式炉中生长In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线。所用生长衬底为蒸镀有2 nm Au颗粒的纯Si衬底，所用药品为In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "粉末和纳米碳粉，比例为10 :1。生长温度为1 050 ℃，生长时间为1 h，载气为Ar :O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(100 :2)混合气，气流量为200 mL/min。生长结束后继续通入混合气，直至衬底自然降温至室温。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "器件的制备" } ], "level": "2", "id": "s2-2" } }, { "name": "p", "data": [ { "name": "text", "data": "采用物理转移法，将生长好的纳米线转移到带有定位标记的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si衬底上(SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "~300 nm)，选取直径~100 nm的纳米线，通过微纳加工过程制备电极(Au/Cr~50 nm/15 nm)。具体步骤为：CAD画出电极图形；旋涂光刻胶(MMA/PMMA)；电子束光刻；显影；蒸金、剥离。制备好器件后，采用半导体参数分析仪对器件进行电学性能测试及光电性能测试，其中，光电性能测试所用光源为254 nm手提式紫外分析仪，光功率密度为0~0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "纳米线的基本表征" } ], "level": "2", "id": "s3-1" } }, { "name": "p", "data": [ { "name": "text", "data": "采用扫描电子显微镜(SEM)表征In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的形貌，如" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "所示。由SEM图像可见，生长好的样品存在大量较细直径的纳米线，同时也存在一定量较大直径的微米线。其中纳米线直径在70~120 nm范围内，同时具有数十微米的长度。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的SEM图。(a)放大2 000倍；(b)放大6 500倍。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "SEM images of the In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires. (a)2 000×. (b)6 500×." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971051&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971051&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971051&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为便于后续器件制备，我们选取直径~100 nm的单根纳米线进行了微区拉曼测试，如" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "所示。可见纳米线在227.7 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和303.4 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "处表现出两个明显的拉曼位移峰，分别来源于亚稳态刚玉结构In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和立方相In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线(直径：~100 nm)的微区拉曼图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "text", "data": "μ-Raman image of the In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire with the diameter of ~100 nm" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971052&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971052&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971052&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管" } ], "level": "2", "id": "s3-2" } }, { "name": "p", "data": [ { "name": "text", "data": "采用微纳加工工艺将单根In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线制备成光电二极管，器件结构示意图如" }, { "name": "xref", "data": { "text": "图 3(a)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(a)" } ] } }, { "name": "text", "data": "所示，其中，纳米线直径约为100 nm，沟道长度为2 μm。随后，对光电二极管在暗场和紫外光照(254 nm，0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "特性进行表征，如" }, { "name": "xref", "data": { "text": "图 3(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(b)" } ] } }, { "name": "text", "data": "所示，其中插图为器件的SEM图像，比例尺为2 μm。可见器件在紫外光照下具有明显的光响应。" } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管的基本特性。(a)器件结构示意图；(b)器件在暗场和254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "曲线，插图为器件的SEM图，比例尺为2 μm；(c)器件响应度与偏压的依赖性关系；(d)器件比探测率与偏压的依赖性关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "Characteristics of In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire photodiodes. (a)Schematic diagram of the device structure. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " curves of the device at dark and 254 nm(0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") illumination, the inset is the SEM image of the device, scale bar: 2 μm. (c)Dependence of the responsivity on the bias voltage. (d)Dependence of specific detectivity on bias voltage." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971053&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971053&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971053&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "光开关比(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": ")、响应度(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")和比探测率(" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] }, { "name": "text", "data": ")是衡量光电探测器探测能力的重要指标，其中光开关比定义为光电探测器所产生的光电流和暗电流的比值，光开关比和比探测率用于衡量探测器检测微弱信号的能力，响应度用于衡量探测器将光信号转换为电信号的能力。响应度和比探测率可通过下式计算得到" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "b11", "b12", "b13" ], "text": "11-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "1" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971054&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971054&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971054&type=middle" } } } ], "id": "fgxb-42-2-208-E1" } } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "2" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971055&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971055&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971055&type=middle" } } } ], "id": "fgxb-42-2-208-E2" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "是光电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "是暗电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "是光功率密度，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "是光敏区域，" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "是电子电量。由" }, { "name": "xref", "data": { "text": "图 3(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(b)" } ] } }, { "name": "text", "data": "可知，虽然器件可以产生光电流，但是，由于此时光电二极管的暗电流较大，导致器件的光开关比很小(小于2)，因此难以区分噪声信号，不利于实现弱信号的探测。此外，计算了器件在不同电压下的响应度和比探测率，如" }, { "name": "xref", "data": { "text": "图 3(c)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(c)" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "3(d)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "3(d)" } ] } }, { "name": "text", "data": "所示。可见器件的响应度和比探测率随偏压的变化而变化，并在1 V电压下达到峰值，此时，器件的光开关比为1.3，响应度为1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A/W，比探测率为1.98×10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " cm·Hz" }, { "name": "sup", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。由此可知，In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管虽然具有较高的光响应度，但其较大的暗电流限制了器件探测微弱信号的能力。因此，In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管不利于实际应用。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线场效应晶体管" } ], "level": "2", "id": "s3-3" } }, { "name": "p", "data": [ { "name": "text", "data": "将In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线制备成背栅型场效应晶体管，并对其进行基本电学特性表征。" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "4(b)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "4(b)" } ] } }, { "name": "text", "data": "分别为器件在" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "=1 V下的转移特性曲线以及器件在不同栅压下的输出特性曲线，可见器件具有明显的场调制效应。" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "随着栅压的增加而增加，表明器件呈现出N型导电性，且具有极低的关态电流~ 10" }, { "name": "sup", "data": [ { "name": "text", "data": "-12" } ] }, { "name": "text", "data": "以及极高的开态电流~10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "，开态电流和关态电流的比值高达10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "，表明其作为开关器件的应用潜力。此外，器件具有较为明显的回滞，回滞和器件中存在的界面态息息相关，器件具有回滞，表明其中存在较为明显的界面态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。器件的场效应迁移率(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": ")和场诱导载流子浓度(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": ")可用下式计算" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "3" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": 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"title": [ { "name": "text", "data": "Characteristics of In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire field effect transistors. (a)Transfer characteristic and hysteresis of the device when " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "=1 V, the inset is the schematic diagram of the device. (b)Ooutput characteristic of the device under different gate voltages(-50-50 V)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971057&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971057&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971057&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "是器件的跨导，定义为" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "=d" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "/d" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": "；" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "是沟道长度；" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "是背栅电容，为:" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "4" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971058&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971058&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971058&type=middle" } } } ], "id": "fgxb-42-2-208-E4" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "是真空介电常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "是SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的相对介电常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "是氧化层厚度，" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "为纳米线直径。载流子浓度可用下式计算：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "5" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971059&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971059&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971059&type=middle" } } } ], "id": "fgxb-42-2-208-E5" } } ] }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "是器件的阈值。计算得到器件的场效应迁移率约为121 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，载流子浓度约为5.75× 10" }, { "name": "sup", "data": [ { "name": "text", "data": "17" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": "=0)。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电晶体管" } ], "level": "2", "id": "s3-4" } }, { "name": "p", "data": [ { "name": "text", "data": "为表明In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线场效应晶体管作为光电晶体管的应用潜力，进一步测试了其作为光电晶体管的基本特性，如" }, { "name": "xref", "data": { "text": "图 5", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图 5(a)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(a)" } ] } }, { "name": "text", "data": "为器件在暗场及254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下的转移特性曲线(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "=1 V)，可见，在光照下，器件具有较高的光电流。光电流虽然和栅压具有一定的依赖关系，但是，即便是在最强的反向栅压下，器件的光电流依然无法耗尽，导致器件具有极高的光开关比。为进一步比较器件性能与栅压的依赖关系，分析了在254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下，器件光开关比、响应度和比探测率与栅压的依赖关系，如" }, { "name": "xref", "data": { "text": "图 5(b)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(b)" } ] } }, { "name": "text", "data": "~" }, { "name": "xref", "data": { "text": "(d)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "(d)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电晶体管的基本特性。(a)暗场及254 nm(0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")光照下的转移特性曲线，插图为光照下的转移特性曲线；(b)器件在254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下的光开关比；(c)254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下，器件响应度与栅压的依赖关系；(d)254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下，器件比探测率与栅压的依赖关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Characteristics of In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire phototransistor. (a)Ttransfer characteristic at dark and 254 nm(0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") illumination. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": " of the device under 254 nm(0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") illumination. (c)Dependence of the responsivity on the bias voltage, under 254 nm(0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") illumination. (d)Dependence of the specific detectivity on the bias voltage, under 254 nm(0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") illumination." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971060&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971060&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971060&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从图中可以看出，随着栅压的调制，器件的光开关比可高达10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "，明显优于In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管。此外，器件的光响应度和比探测率也随着栅压的变化而变化，但其变化幅度较弱，同时其峰值皆出现在-25 V栅压附近。对比此时的暗场转移特性曲线，场效应管并非处于关态，这和光照所导致的阈值电压偏移有关。光照下，器件阈值电压会向反向移动，导致最大光生电流不发生在暗场关态电压处，这将导致光开关比明显减小。此时，器件的光开关比为50，虽然数值较低，但仍不利于微弱光信号的检测。因此，为了同时得到优化的光电晶体管性能，应使光电晶体管工作于暗场关态电压处(-32.5 V)，此时，器件的光开关比为1.07×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "，响应度为5.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A/W，比探测率为9.89×10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " cm·Hz" }, { "name": "sup", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。光电晶体管性能明显优于光电二极管，同时，高于文献报道的In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构光电探测器，如" }, { "name": "xref", "data": { "text": "表 1", "type": "table", "rid": "Table1", "data": [ { "name": "text", "data": "表 1" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": ", " }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "b17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "b15", "b16", "b17" ], "text": "15-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "Table1", 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}, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] } ] }, { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "9.89×10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] } ] }, { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "本文" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "线性动态范围(LDR)(" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "LDR" } ] }, { "name": "text", "data": ")也是衡量器件性能指标的重要参数，并可通过下式计算：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "6" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971061&type=", "small": 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"text", "data": "]" } ] }, { "name": "text", "data": "。为此测试了不同光照强度下In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电晶体管的转移特性(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "=1 V)，并给出光电流和光功率密度的依赖关系(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": "=-32.5 V)，如" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "所示。计算得到器件的LDR为160 dB，优于Si探测器(120 dB)和InGaAs探测器(66 dB)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "b18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同光照强度下，In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电晶体管的基本特性。(a)不同光强下晶体管的转移特性曲线；(b)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": "=-32.5 V时，光电流和光强的依赖性关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Characteristics of In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowire phototransistor under different illumination power intensities. (a)Transfer characteristic of the phototransistor under different illumination power intensities. (b)Dependence of the photocurrent on the illumination power intensities, " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": "=-32.5 V." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971062&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971062&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971062&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "据报道，金属氧化物纳米线的缺陷态主要来源于纳米线表面的氧空位" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。暗场下，吸附在纳米线表面的氧分子捕获了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线中的部分自由电子，从而形成负氧离子[O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(g)+" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "→O" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "]，并在纳米线表面附近形成耗尽区，同时，背栅电场的调制作用将暗电流全部耗尽。光照下，光生电子-空穴对被耗尽区形成的内建电场分离，光生空穴运动到纳米线表面，释放负氧离子[" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " +O" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": " →O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(g)]，导致氧的脱附，在氧分子的重吸收过程中，未与光生空穴复合的光生电子移向沟道并被电极收集，从而产生明显的光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": ", " }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "b19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "b20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "b19", "b20" ], "text": "19-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，在光照下晶体管内的载流子浓度增加，器件的阈值电压发生偏移，需要更大的反向栅压调制才能将载流子耗尽，而高的载流子浓度也会降低接触电阻，使更多的光生载流子被收集。因此，光电晶体管的高性能主要来源于纳米线表面氧分子的吸附和解吸，以及光照下场效应管阈值电压的偏移。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电二极管，并对其基本光开关比、响应度和比探测率进行了分析。虽然光电二极管具有较高的光响应度，但是，器件的暗电流较大，光开关比很小，不利于微弱信号的探测。通过将其制备成光电晶体管，可通过栅压调制将暗电流全部耗尽，而对于光电流却影响较小。最终，在254 nm、0.178 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下可得到光开光比为1.07×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "、响应度为5.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A/W、比探测率为9.89×10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " cm·Hz" }, { "name": "sup", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线紫外光电晶体管，性能明显优于先前报道的In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构光电探测器，促进了In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线光电晶体管的进一步应用。" 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