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具有高光开关比和高响应度的单根In2O3纳米线紫外光电晶体管
Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
- 发光学报 2021年42卷第2期 页码：208-214
- 作者机构：
长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
- 作者简介：
[ "陈雪(1992－), 女, 吉林长春人, 博士研究生, 2015年于吉林师范大学获得学士学位, 主要从事纳米光电子器件方面的研究。E-mail:streamchen520@yahoo.com" ]
[ "魏志鹏(1978－), 男, 吉林长春人, 博士, 教授, 博士研究生导师, 2008年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事半导体光电子器件方面的研究。E-mail:zpweicust@126.com" ]
- 基金信息：吉林省科技发展计划项目(20200301052RQ);吉林省教育厅项目(JJKH20200763KJ);长春科技大学青年基金会(XQNJJ-2018-18);国家自然科学基金(12074045);国家自然科学基金(61904017);国家自然科学基金(62074018)
DOI：10.37188/CJL.20200376
中图分类号： O472.8纸质出版日期：2021-2，
收稿日期：2020-12-8，
录用日期：2020-12-28
扫 描 看 全 文
陈雪, 魏志鹏. 具有高光开关比和高响应度的单根In2O3纳米线紫外光电晶体管[J]. 发光学报, 2021,42(2):208-214.
Xue CHEN, Zhi-peng WEI. Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity[J]. Chinese Journal of Luminescence, 2021,42(2):208-214.
陈雪, 魏志鹏. 具有高光开关比和高响应度的单根In2O3纳米线紫外光电晶体管[J]. 发光学报, 2021,42(2):208-214. DOI： 10.37188/CJL.20200376.
Xue CHEN, Zhi-peng WEI. Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity[J]. Chinese Journal of Luminescence, 2021,42(2):208-214. DOI： 10.37188/CJL.20200376.
摘要
In
2
O
3
纳米线由于其独特性质而成为紫外光电探测器的潜力候选者，目前，In
2
O
3
纳米线基紫外光电探测器已被广泛研究，但较大的暗电流限制了其进一步应用。本文制备了In
2
O
3
纳米线紫外光电晶体管，通过背栅电压的调制作用，器件中的暗电流几乎被全部耗尽，同时，由于光照下的阈值偏移，栅压对光电流的影响较小。最终得到具有高光开关比（1.07×10
8
）和高响应度（5.58×10
7
A/W）的单根In
2
O
3
纳米线紫外光电晶体管，性能明显优于之前报道的In
2
O
3
纳米结构光电探测器。本工作促进了In
2
O
3
纳米线在下一代纳米光电子器件和集成电路中的应用。
Abstract
Owing to the unique properties
In
2
O
3
nanowires have become potential candidates for ultraviolet photodetectors. To date
In
2
O
3
nanowires-based UV photodetectors have been extensively studied. However
the large dark current limits its further applications. In this paper
a single In
2
O
3
nanowire ultraviolet phototransistor is performed. Through the modulation of the back gate voltage
the dark current is almost completely depleted. At the same time
the threshold voltage shows a shift under illumination
leading to little dependence between gate voltage and photocurrent. Finally
a single In
2
O
3
nanowire ultraviolet phototransistor with a high optical on-off ratio of 1.07×10
8
and a high responsivity of 5.58×10
7
A/W was obtained
which is better than the previously reported In
2
O
3
nanostructured optoelectronic devices. This work promotes the application of In
2
O
3
nanowires in the next generation of nano-optoelectronic devices and integrated circuits.
关键词
In2O3纳米线紫外光电晶体管响应度
Keywords
In2O3 nanowireultravioletphototransistorresponsivity
references
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