具有高光开关比和高响应度的单根In<sub>2</sub>O<sub>3</sub>纳米线紫外光电晶体管

陈雪; 魏志鹏

doi:10.37188/CJL.20200376

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具有高光开关比和高响应度的单根In₂O₃纳米线紫外光电晶体管

器件制备及器件物理 | 更新时间：2021-02-08

- 具有高光开关比和高响应度的单根In₂O₃纳米线紫外光电晶体管
- Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
- 发光学报 2021年42卷第2期页码：208-214
- 作者机构：
  
  1.长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
  
  [ "陈雪(1992－), 女, 吉林长春人, 博士研究生, 2015年于吉林师范大学获得学士学位, 主要从事纳米光电子器件方面的研究。E-mail:streamchen520@yahoo.com" ]
  [ "魏志鹏(1978－), 男, 吉林长春人, 博士, 教授, 博士研究生导师, 2008年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事半导体光电子器件方面的研究。E-mail:zpweicust@126.com" ]
- 基金信息：
  
  吉林省科技发展计划项目(20200301052RQ);吉林省教育厅项目(JJKH20200763KJ);长春科技大学青年基金会(XQNJJ-2018-18);国家自然科学基金(12074045);国家自然科学基金(61904017);国家自然科学基金(62074018)
- DOI：10.37188/CJL.20200376
  中图分类号：
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陈雪, 魏志鹏. 具有高光开关比和高响应度的单根In₂O₃纳米线紫外光电晶体管[J]. 发光学报, 2021,42(2):208-214.

Xue CHEN, Zhi-peng WEI. Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity[J]. Chinese Journal of Luminescence, 2021,42(2):208-214.
陈雪, 魏志鹏. 具有高光开关比和高响应度的单根In₂O₃纳米线紫外光电晶体管[J]. 发光学报, 2021,42(2):208-214. DOI： 10.37188/CJL.20200376.

Xue CHEN, Zhi-peng WEI. Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity[J]. Chinese Journal of Luminescence, 2021,42(2):208-214. DOI： 10.37188/CJL.20200376.

摘要

In,2,O,3,纳米线由于其独特性质而成为紫外光电探测器的潜力候选者，目前，In,2,O,3,纳米线基紫外光电探测器已被广泛研究，但较大的暗电流限制了其进一步应用。本文制备了In,2,O,3,纳米线紫外光电晶体管，通过背栅电压的调制作用，器件中的暗电流几乎被全部耗尽，同时，由于光照下的阈值偏移，栅压对光电流的影响较小。最终得到具有高光开关比（1.07×10,8,）和高响应度（5.58×10,7, A/W）的单根In,2,O,3,纳米线紫外光电晶体管，性能明显优于之前报道的In,2,O,3,纳米结构光电探测器。本工作促进了In,2,O,3,纳米线在下一代纳米光电子器件和集成电路中的应用。

Abstract

Owing to the unique properties, In,2,O,3, nanowires have become potential candidates for ultraviolet photodetectors. To date, In,2,O,3, nanowires-based UV photodetectors have been extensively studied. However, the large dark current limits its further applications. In this paper, a single In,2,O,3, nanowire ultraviolet phototransistor is performed. Through the modulation of the back gate voltage, the dark current is almost completely depleted. At the same time, the threshold voltage shows a shift under illumination, leading to little dependence between gate voltage and photocurrent. Finally, a single In,2,O,3, nanowire ultraviolet phototransistor with a high optical on-off ratio of 1.07×10,8, and a high responsivity of 5.58×10,7, A/W was obtained, which is better than the previously reported In,2,O,3, nanostructured optoelectronic devices. This work promotes the application of In,2,O,3, nanowires in the next generation of nano-optoelectronic devices and integrated circuits.

关键词

In2O3纳米线紫外光电晶体管响应度

Keywords

In2O3 nanowireultravioletphototransistorresponsivity

references

YU Y, LI W Q, WU P C, et al.. Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors[J].Appl. Phys. Lett., 2016, 109(19):193505-1-5.

MENG M, WU X L, JI X L, et al.. Ultrahigh quantum efficiency photodetector and ultrafast reversible surface wettability transition of square In2O3 nanowires[J].Nano Res., 2017, 10(8):2772-2781.

XU Q, LIU X Q, WAN B S, et al.. In2O3 nanowire field-effect transistors with sub-60 mV/dec subthreshold swing stemming from negative capacitance and their logic applications[J].ACS Nano, 2018, 12(9):9608-9616.

CHEN Y Y, YANG S M, LU K C. Synthesis of high-density indium oxide nanowires with low electrical resistivity[J].Nanomaterials, 2020, 10(11):2100-1-7.

ZHANG D, LI C, HAN S, et al.. Ultraviolet photodetection properties of indium oxide nanowires[J].Appl. Phys. A, 2003, 77(1):163-166.

ZHANG Z G, WANG X X, ZHANG J, et al.. Recent advances in 1D micro- and nanoscale indium oxide structures[J].J. Alloys Compd., 2018, 752:359-375.

LI X, XIONG X, ZHANG Q. Performance-enhancing ultraviolet photodetectors established on individual In2O3 nanowires via coating a CuO layer[J].Mater. Res. Express, 2017, 4(4):045018-1-15.

ZOU X M, LIU X Q, WANG C L, et al.. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors[J].ACS Nano, 2013, 7(1):804-810.

ALSAIF M M Y A, KURIAKOSE S, WALIA S, et al.. 2D SnO/In2O3 van der Waals heterostructure photodetector based on printed oxide skin of liquid metals[J].Adv. Mater. Interfaces, 2019, 6(7):1900007-1-25.

ZHANG W H, ZHANG W D. Synthesis and optical properties of nanosheet-based rh-In2O3 microflowers by triethylene glycol-mediated solvothermal process[J].J. Phys. Chem. Solids, 2013, 74(9):1271-1274.

GUO N, HU W D, LIAO L, et al.. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature[J].Adv. Mater., 2014, 26(48):8203-8209.

ZHU X T, LIN F Y, ZHANG Z H, et al.. Enhancing performance of a GaAs/AlGaAs/GaAs nanowire photodetector based on the two-dimensional electron-hole tube structure[J].Nano Lett., 2020, 20(4):2654-2659.

CHEN X, WANG D K, WANG T, et al.. Enhanced photoresponsivity of a GaAs nanowire metal-semiconductor-metal photodetector by adjusting the Fermi level[J].ACS Appl. Mater. Interfaces, 2019, 11(36):33188-33193.

ZHENG D S, WANG J L, HU W D, et al.. When nanowires meet ultrahigh ferroelectric field-high-performance full-depleted nanowire photodetectors[J].Nano Lett., 2016, 16(4):2548-2555.

MAZOUCHI M, SARKAR K, PURAHMAD M, et al.. Photoconduction mechanism of ultra-long indium oxide nanowires[J].Solid-State Electron., 2018, 148:58-62.

MOUDGIL A, SHARMA K K, DAS S. In2O3/TiO2 heterostructure for highly responsive low-noise ultraviolet photodetector[J].IEEE Trans. Electron Devices, 2020, 67(1):166-172.

POOJA P, CHINNAMUTHU P. Surface state controlled superior photodetection properties of isotype n-TiO2/In2O3 heterostructure nanowire array with high specific detectivity[J].IEEE Trans. Nanotechnol., 2019, 19:34-41.

GONG X, TONG M H, XIA Y J, et al.. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm[J].Science, 2009, 325(5948):1665-1667.

HUANG X Y, CHI Z T, LIU J, et al.. Enhanced gas sensing performance based on p-NiS/n-In2O3 heterojunction nanocomposites[J].Sens. Actuators B-Chem., 2020, 304:127305-1-11.

JIANG J, LING C Y, XU T,et al.. Defect engineering for modulating the trap states in 2D photoconductors[J].Adv. Mater., 2018, 30(40):1804332-1-6.

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具有高光开关比和高响应度的单根In2O3纳米线紫外光电晶体管

Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity

DOI：10.37188/CJL.20200376

摘要

Abstract

关键词

Keywords

references

具有高光开关比和高响应度的单根In₂O₃纳米线紫外光电晶体管

Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity