高功率半导体激光列阵芯片测试表征与仿真优化

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高功率半导体激光列阵芯片测试表征与仿真优化" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "杜", "givenname": "宇琦", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "DU", "givenname": "Yu-qi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "bio": [ { "lang": "zh", "text": [ "杜宇琦(1995-)，女，山西吕梁人，硕士研究生,2018年于太原理工大学获得学士学位，主要从事高功率半导体激光器机理分析方面的研究。E-mail: duyuqi@opt.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350319&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350323&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350328&type=" } ], "data": [ [ { "name": "text", "data": "杜宇琦" }, { "name": "text", "data": "(1995-)，女，山西吕梁人，硕士研究生,2018年于太原理工大学获得学士学位，主要从事高功率半导体激光器机理分析方面的研究。E-mail: " }, { "name": "text", "data": "duyuqi@opt.cn" } ] ] } ], "email": "duyuqi@opt.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "贞福", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Zhen-fu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "E-mail: wzf2718@opt.ac.cn", "data": [ { "name": "text", "data": "E-mail: wzf2718@opt.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王贞福(1982-)，男，山东高密人，博士，副研究员,2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高功率、高效率半导体激光器方面的研究。E-mail:wzf2718@opt.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350333&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350338&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350343&type=" } ], "data": [ [ { "name": "text", "data": "王贞福" }, { "name": "text", "data": "(1982-)，男，山东高密人，博士，副研究员,2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高功率、高效率半导体激光器方面的研究。E-mail:" }, { "name": "text", "data": "wzf2718@opt.ac.cn" } ] ] } ], "email": "wzf2718@opt.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "晓颖", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Xiao-ying", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "杨", "givenname": "国文", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YANG", "givenname": "Guo-wen", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "特", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Te", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "育衔", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Yu-xian", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "波", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Bo", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "常", "givenname": "奕栋", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHANG", "givenname": "Yi-dong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "赵", "givenname": "宇亮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Yu-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "兰", "givenname": "宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LAN", "givenname": "Yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西 　 西安 　 710119", "data": [ { "name": "text", "data": "中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西 　 西安 　 710119" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China", "data": [ { "name": "text", "data": "State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学，北京 　 100049", "data": [ { "name": "text", "data": "中国科学院大学，北京 　 100049" } ] }, { "lang": "en", "label": "2", "text": "University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "陕西省计量科学研究院，陕西 　 西安 　 710100", "data": [ { "name": "text", "data": "陕西省计量科学研究院，陕西 　 西安 　 710100" } ] }, { "lang": "en", "label": "3", "text": "Shaanxi Institute of Metrology Science, Xi'an 710100, China", "data": [ { "name": "text", "data": "Shaanxi Institute of Metrology Science, Xi'an 710100, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "针对高功率半导体激光芯片工作温度升高易引起芯片性能退化和失效问题，首先理论分析了工作温度对内量子效率的影响机理。其次，为量化温度影响芯片稳定性的主要因素，自主搭建高功率半导体激光列阵芯片测试系统，研究15~60 ℃半导体激光列阵芯片的温度特性，分析了5种能量损耗分布及其随温度的变化趋势。实验结果表明，当温度由15 ℃升高至60 ℃，载流子泄漏损耗占比由2.30%急剧上升至11.36%，是造成半导体激光芯片在高温下电光转换效率降低的主要因素。最后进行了外延结构的仿真优化，仿真结果表明，提高波导层Al组分至20%，能有效限制载流子泄漏，平衡Al组分增加带来的串联电阻增大问题，可以获得高效率输出。该研究对高温下半导体激光芯片的设计具有重要的指导意义。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Due to small size, light weight, high efficiency and long operation life, high power semiconductor laser array chips have gradually entered into mass-markets and emerged applications, such as laser pumping, materials processing, medical therapy and lidar. However, limited by high-temperature working environments such as material processing, the development of high power semiconductor laser is hindered. Since laser diode arrays work in high-temperature working environments and generate great quantity during operating, the output power and reliability of high power semiconductor laser is decreased, which is caused by reducing in slope efficiency, increasing in threshold current, and wavelength redshift. Hence, it is vital to research the optoelectronic performance and laser diode array optimization of semiconductor laser under high temperature. To improve the high temperature performance of high-power semiconductor laser chips, firstly, the influence mechanism of environment temperature on internal quantum efficiency is analyzed theoretically. Secondly, in order to quantify the main factors affecting the stability of the chip, the high-power semiconductor laser array chips test system was built to study the characteristics of the laser diode array chips at 15-60 ℃, and analyze energy loss distribution at various temperatures. The experimental results show that when the temperature rises from 15 ℃ to 60 ℃, the percentage of carrier leakage loss increases sharply from 2.30% to 11.36%, which is the main factor affecting the high temperature operation of semiconductor laser array chips. Finally, the chip structure simulation shows that increasing the Al composition of the waveguide layer to 20% can effectively limit carrier leakage, balance the increase in series resistance caused by the increase of Al composition, and obtain high electro-optical conversion efficiency. This research can provide a reference for the design of high-temperature laser diode array chips." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "高功率" } ], [ { "name": "text", "data": "半导体激光列阵芯片" } ], [ { "name": "text", "data": "高温特性" } ], [ { "name": "text", "data": "能量损耗分布" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "high power" } ], [ { "name": "text", "data": "laser diode array chips" } ], [ { "name": "text", "data": "high temperature characteristic" } ], [ { "name": "text", "data": "energy loss distribution" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器由于体积小、重量轻、电光转换效率高、寿命长等优点，在激光泵浦" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、材料加工" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、激光医疗" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、激光雷达" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "和空间激光通信" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "等方面应用十分广泛。其中,7901 100 nm波段高功率半导体激光器发展比较成熟，一般采用InGaAs/AlGaAs/GaAs材料体系或InGaAs/GaAsP体系。InGaAs/GaAsP材料采用宽带隙GaAsP作势垒层可有效限制载流子泄漏，减小因载流子泄漏而造成的光学损耗" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，但由于势垒层GaAsP外延生长工艺复杂，容易引入缺陷，造成大量载流子的聚集，限制了器件效率提高" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";InGaAs/AlGaAs/GaAs材料体系目前已经开展了较为深入的研究，制备技术成熟" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，有阈值电流密度低、调制及线宽特性改善等诸多优点。由于在材料焊接、表面相变硬化、表面熔覆、空间通信" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "等高温工作领域的应用，工作环境恶劣，激光器面临着相对较高的环境温度和工作温度" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，严重影响着半导体激光器的光电性能" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。此外，温度升高器件容易产生热饱和(Thermal rollover)、腔面光学灾变损伤(Catastrophic optical mirror damage,COMD)等物理现象，引起器件的性能退化甚至失效。因此，研究高功率半导体激光器在高温下的输出特性和变化规律，特别是高温对电光转换效率的影响机制，以此来提高器件的电光转换效率、减小废热产生成为国内外研究的热点领域之一。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2006年,Kanazawa等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "研究了1.2 μm高温工作的InGaAs/GaAs量子阱激光器的温度特性，高应变InGaAs/GaAs脊形波导激光器的有源层由具有高度应变的InGaAs的3个量子阱组成,In占比32%，在连续驱动条件下，最高工作温度达到200 ℃以上，温度特性" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "在3080 ℃下为222 K，显示出应变量子阱优异的温度特性;2009年,Crump等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "报道了980 nm半导体激光器单管在短脉宽(500 ns,1 kHz)条件下，器件在15125 ℃范围内斜率效率降低15%，且通过波导层中自发辐射的增强证实了载流子的泄漏;2020年,Hülsewede等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "为提高半导体激光器工作温度范围，降低散热冷却成本，优化芯片设计及热沉结构，实现了列阵器件在热沉35 ℃条件下，芯片输出功率仍在200 W以上，结温不超过70 ℃。同样，国内对半导体激光器的温度特性也做了大量研究。2012年，长春理工大学高功率半导体激光国家重点实验室研究了1.06 μm InGaAs/InGaAsP量子阱半导体激光器列阵模块的温度特性，通过调试得到不同温度条件下的最佳工作状态，并提出引入应变降低阈值电流" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";2016年，刘旭等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "报道了高温激光二极管抽运全固态激光器，满足在-4060 ℃范围内稳定工作，降低温控系统的制冷压力，有效实现了全固态激光器小型化和高效率;2017年，西安光机所研究了填充因子为30%的808 nm半导体激光器阵列在热沉温度为15 ℃时最高电光转换效率达到71% " }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为进一步研究高功率半导体激光列阵的高温特性工作机理，本文建立列阵芯片测试系统，分析15~60 ℃半导体激光芯片列阵的光电性能，通过计算特征温度分析半导体激光芯片的热稳定性，从5种能量损耗路径研究高温下影响半导体激光芯片性能的主要因素，结合实验结果，进行了半导体激光器结构建模与仿真，针对载流子泄漏问题给出了外延结构优化设计建议。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　理论分析" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器的光输出功率为" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350349&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350354&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350359&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "为外微分量子效率," }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "为普朗克常数," }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "为光子频率," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "为工作电流," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "为阈值电流，斜率效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "是表征半导体激光器光电性能的主要参数之一，可表示为" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350364&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350370&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350373&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "表示内量子效率," }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "为内损耗," }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "为腔面损耗," }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为腔长," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "分别为芯片前后腔面反射率。由公式(2)可知，对于确定腔长、腔面反射率的半导体激光器，斜率效率与内量子效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "成正比，与内损耗" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "成反比。半导体激光器内量子效率可表示为" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ":" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350378&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350382&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350386&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "l" } ] }, { "name": "text", "data": "表示与侧向扩展电流相联系的注入效率，代表注入到有源区的电流与注入电流之比，对于宽波导半导体激光器," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "l" } ] }, { "name": "text", "data": "约为1;" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "表示注入到量子阱区的复合电流与注入到整个有源区的电流的比值;" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "表示注入到量子阱的电流中辐射复合占总复合电流(包括辐射复合和自发辐射复合)的比例，随温度的升高" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "基本保持恒定。由于" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "l" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "在不同温度下基本保持恒定" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，因此," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "是影响内量子效率的主要因素，可表示为" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350389&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350392&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350395&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF4" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "stim" } ] }, { "name": "text", "data": "为辐射复合电流," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "为非辐射复合电流," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "为漏电流。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为量子阱漏电流示意图。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "为15~60 ℃下InGaAs/GaAs量子阱自由电子浓度与15 ℃自由电子浓度的比值变化情况，可以看出，在15~60 ℃，量子阱自由电子浓度下降超过20%，漏电流大小与量子阱载流子浓度成反比。因此，漏电流随温度升高迅速增大，内量子效率也会急剧减小，严重影响半导体激光器的稳定性。为量化研究影响芯片稳定性的主要因素，从实验角度详细分析了5种能量损耗分布及其随温度的变化趋势。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "半导体激光器漏电流示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagram of leakage current of LD" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350398&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350404&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350403&type=" } ] } }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "量子阱自由电子浓度在不同温度下的归一化分布" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Normalized distribution of the free electron concentration of the quantum well at different temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350406&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350408&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350407&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　实验系统及芯片测试" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　芯片结构" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光芯片外延结构如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示，采用金属有机化学气相沉积系统(Metal-organic chemical vapour deposition,MOCVD)进行外延材料生长。在n-GaAs衬底(Si掺杂,2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ")上依次生长N型GaAs缓冲层，掺杂浓度为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ",N型包层Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.18" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.82" } ] }, { "name": "text", "data": "As，掺杂浓度为1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ";N型波导层Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.9" } ] }, { "name": "text", "data": "As，不掺杂;有源区为无掺杂的InGaAs/GaAs;P型波导层Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.9" } ] }, { "name": "text", "data": "As，不掺杂;P型包层Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "As，掺杂浓度为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ";P型盖层GaAs，掺杂浓度为1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "典型的半导体激光阵列芯片外延结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Epitaxial structure schematic diagram of a typical laser diode array chips" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350409&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350411&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350410&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "为半导体激光芯片列阵及具体结构示意图。本实验采用标准的1 cm列阵，列阵芯片尺寸如下:腔长2 mm，宽度10 mm，厚度120 μm,P面电极200 μm，包含37个独立发光点，填充因子75%。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "半导体激光列阵芯片示意图及结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Laser diode array chips schematic diagram and structure" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350412&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350414&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350413&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　实验系统" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "我们独立自主搭建了LIV100列阵测试系统，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，芯片真空吸附在温控载物台上，电源卡采用U型铜箔提供脉宽范围为0.052 000 μs、重复频率19.239 995.00 Hz的高电流，接触式探针测量运行状态下芯片电压，电流、电压和光功率的采样速率为1~20 MS/s，最终由积分球接收光信号并由光电二极管检测器及光谱仪测量光功率和波长。在不考虑封装带来的应力影响下，实验研究15~60 ℃高功率半导体激光芯片列阵的温度特性。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "半导体激光列阵芯片测试系统结构图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Structure diagram of laser diode array chips test system" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350415&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350417&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350416&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　芯片测试" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "列阵芯片通过真空吸附固定在散热底板上，通过热电制冷器(Thermo-electric cooler,TEC)控温将散热底板控制在恒定温度。在驱动电流100 A、重复频率20 Hz、脉宽200 μs、占空比0.4%条件下，测试15~60 ℃范围内的光电性能，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示为峰值功率和电光转换效率测试结果。从图中可以看出，列阵芯片在15 ℃输出功率最大为93.11 W,60 ℃功率为72.59 W，在15~60 ℃芯片整体光输出功率下降达22%，对应电光转换效率由54.82%下降至43.88%。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "15~60 ℃半导体激光列阵芯片" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": " curve of laser diode array chips at 15-60 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350418&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350420&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350419&type=" } ] } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "15~60 ℃半导体激光阵列芯片电光转换效率曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Power conversion efficiency curve of laser diode array chips at 15-60 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350421&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350423&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350422&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "此外，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示，在驱动电流100 A条件下，随着温度由15 ℃升高至60 ℃，芯片峰值波长从952.8 nm红移至965.6 nm，温度随波长偏移系数为0.28 nm/℃。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "15~60 ℃半导体激光阵列芯片光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Spectra of laser diode array chips at 15-60 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350424&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350426&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350425&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "阈值电流随温度的变化特性表明，量子阱结构限制了不同温度下半导体激光器的光电性能" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。从所测得的" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": "曲线，计算得到不同温度条件下，阈值电流、斜率效率随温度的变化如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。从" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "可知，在相同电流条件下,15~60 ℃温度范围内，列阵芯片阈值电流由19.92 A增大至28.80 A，斜率效率由1.18 W/A降低至1.03 W/A。阈值电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "与温度的对应关系为" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "15~60 ℃半导体激光芯片阈值电流变化趋势" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Variation trend of threshold current of laser diode array at 15-60 ℃" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "/℃" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "/A" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "slop" } ] }, { "name": "text", "data": "/(W·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "15" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "19.92" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.18" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "20" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "20.61" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.16" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "25" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "21.36" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.15" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "30" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "22.24" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.14" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "35" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "23.04" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.13" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "40" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "23.77" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.11" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "45" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "24.59" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.09" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "50" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "25.75" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.06" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "55" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "27.17" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.05" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "60" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "28.80" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.03" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350428&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350427&type=" } } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350429&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350431&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350433&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF5" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "为室温; " }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "为室温下阈值电流;" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为半导体激光芯片的特征温度，用来表征半导体激光芯片对温度的敏感特性," }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "越大表示半导体激光芯片对温度越不敏感，热稳定性越好。通过计算得到15~40 ℃特征温度" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为138.89 K,45~60 ℃特征温度" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "只有94.34 K，反映了在高温条件下，半导体激光芯片对温度极其敏感，其光电性能极易受温度影响。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　能量损耗分析" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "当热沉温度从15 ℃上升至60 ℃，半导体激光芯片的输出光功率降低，阈值电流增大，斜率效率降低，中心波长红移。造成这一变化的主要原因有激光器有源区载流子能量的显著增加导致载流子泄漏加剧，温度升高导致自发辐射、非辐射复合几率增大等。为深入探究半导体激光芯片的高温特性，本文从电功率转换成光功率的能量损耗路径进行分析，通常输入电功率可表示为" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(6)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350435&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350437&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350438&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF6" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "为列阵芯片串联电阻," }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为开启电压。开启电压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "由准费米能级差" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "和能带不匹配带来的界面电压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "hj" } ] }, { "name": "text", "data": "两部分组成，因此，输入电功率可以分为五部分" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，表示为" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(7)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350439&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350440&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350441&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF7" } }, { "name": "p", "data": [ { "name": "text", "data": "其中," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "为串联电阻引起的功率损失;" }, { "name": "italic", "data": [ { "name": "text", "data": "IV" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "hj" } ] }, { "name": "text", "data": "是能带不匹配带来的界面损失;" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "为阈值以下自发辐射;" }, { "name": "italic", "data": [ { "name": "text", "data": "IV" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(1-" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": ")表示载流子泄漏损耗;" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": ")" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "为理论输出光功率，包含实际光输出功率及腔内腔面损耗。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "根据公式(7)，对驱动电流100 A条件下，芯片15~60 ℃温度范围内五种能量损耗占比量化计算如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "所示。具体分析结果如下:" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "驱动电流100 A时, 15~60 ℃半导体激光列阵芯片能量损耗分布图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Energy loss distribution chart of laser diode array chips with driving current of 100 A at 15-60 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350442&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350444&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350443&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "(1)焦耳热" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在15~60 ℃温度范围内，焦耳热占比较大，从21.70%降低至20.72%。公式(7)中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "表示焦耳热，其中," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "为芯片各层串联电阻的叠加及线路电阻和接触电阻," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "与载流子迁移率" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "、载流子浓度、各层厚度成反比。由于P波导层掺杂浓度显著低于包层，且空穴迁移率仅为电子迁移率的1/3，因此各层电阻中,P型波导层是串联电阻的主要组成。由于迁移率" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "∝" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350445&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350448&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350446&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "3" }, { "name": "italic", "data": [ { "name": "text", "data": "/" } ] }, { "name": "text", "data": "2" } ] }, { "name": "text", "data": ", " }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "随着温度升高而增加，导致高温下" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "降低，焦耳热随温度的升高逐渐减小" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。此外，由于列阵芯片测试过程中接触电阻偏大，使" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "占比较高。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(2)电压损失" } ] }, { "name": "p", "data": [ { "name": "text", "data": "电压损失是指半导体能带不匹配带来的界面电压，当热沉温度从15 ℃上升到60 ℃时，界面电压损失略微减小，电压损耗由1.50%降低至1.47%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(3)自发辐射" } ] }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "所示，在电流100 A条件下，由于阈值电流较大，在15~60 ℃温度范围内，自发辐射占比在14.84%19.14%之间。当温度升高时，阈值电流随温度升高而大幅增大，导致自发辐射占比增加" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(4)载流子泄漏" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "能量损耗分布图可以看出，在15~60 ℃温度范围内，载流子泄漏水平从2.3%迅速增大至11.36%，这是造成半导体激光芯片内损耗增加、阈值电流增大的关键因素。如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，当TEC温度从15 ℃升高至60 ℃时，阈值电流增加了44.57%，斜率效率降低11.96%。主要原因是温度升高，自由载流子能量增大，导致部分载流子越过势垒进入波导层，将能量以热的形式释放。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "计算得到的15~40 ℃特征温度" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为138.89 K,45~60 ℃特征温度" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "只有94.34 K，也很好地证明了在高温条件下，载流子泄漏水平明显增大。此外，逃逸的自由载流子促进波导层载流子密度增加，非辐射复合速率增大，更多电子能量转换为热能导致半导体激光芯片有源区内量子效率降低，温度升高，进而可能发生热翻转，限制输出功率的增加。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　芯片结构仿真优化" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "为实现高温工作时对载流子的有效限制，从芯片结构设计层面上优化波导层及包层的Al组分。从" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "可以看出，当N型波导层与P型波导层Al组分由10%增加至25%，波导层少数载流子浓度降低，载流子泄漏问题得到有效控制。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "不同波导Al组分下N型、P型波导少子归一化分布。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "Normalized minority carrier distribution of N-type and P-type waveguides at different waveguide Al components" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350451&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350456&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350453&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "为60 ℃工作温度条件下，该结构在不同波导Al组分下的理论输出功率、电压及注入电流为10 A时光电转换效率曲线。由图可知，通过调节Al组分可以有效提高输出功率，主要原因是高Al组分增加了对量子阱载流子的限制作用，有效减小了载流子泄漏损耗。随着波导层Al组分的增加，理论上在相同载流子浓度条件下，迁移率降低将导致串联电阻增大" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";但当波导层Al组分低于20%时，载流子泄漏严重且大部分载流子泄漏至波导层，波导层少数载流子浓度随Al组分的增加逐渐降低，对应迁移率随之不断提高，综合影响导致整体串联电阻没有明显变化。当波导层Al组分高于20%时，载流子泄漏被有效抑制，波导层载流子浓度降低不明显，尤其是P波导层的少子浓度下降变缓慢，导致波导层载流子迁移率降低，引起串联电阻明显增加，电压增大明显。因此，如" }, { "name": "xref", "data": { "text": "图11(c)", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11(c)" } ] } }, { "name": "text", "data": "所示，光电转换效率呈先增大后减小的趋势，并在Al组分为20%时达到最大光电转换效率。从仿真结果可知，在权衡载流子泄漏、串联电阻对光电性能的影响后，提高波导层Al组分至20%既能有效限制载流子泄漏，又能平衡Al组分增加带来的串联电阻增大问题。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "(a)不同波导Al组分下的" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": "曲线;(b)不同波导Al组分下的" }, { "name": "italic", "data": [ { "name": "text", "data": "V-I" } ] }, { "name": "text", "data": "曲线;(c)电光转换效率与波导层不同Al组分关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": " curve at different waveguide Al components. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "V-I" } ] }, { "name": "text", "data": " curve at different waveguide Al components. (c)Relationship of electro-optical converson efficiency and P-waveguide Al components." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350459&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350465&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350461&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "6　结论" } ], "level": "1", "id": "s6" } }, { "name": "p", "data": [ { "name": "text", "data": "本文对温度影响960 nm激光阵列芯片的内在机理进行了理论分析，并搭建了列阵芯片测试系统，对15~60 ℃温度范围内列阵芯片进行光电性能测试，计算得出工作温度由15 ℃升高至60 ℃时，焦耳热损耗由21.70%降低至20.72%，电压损耗从1.50%减小到1.47%，自发辐射占比在14.84%19.14%之间，载流子泄漏占比从2.3%迅速上升至11.36%，是造成芯片热不稳定性的关键原因。仿真结果表明，优化N型、P型波导层及包层Al组分，当芯片工作温度为60 ℃时，波导层Al组分为20%时光电转换效率最高，表明适当增加铝组分可以有效地限制载流子泄漏。该研究对于高温下半导体激光芯片电光转换效率的提高提供了重要的参考。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SKIDMORE J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PETERS M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ROSSIN V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Advances in high-power 9xx nm laser diodes for pumping fiber lasers" }, { "name": "text", "data": "[C]." }, { "name": "text", "data": "Proceedings of the SPIE 9733 High-power Diode Laser Technology and Applications ⅩⅣ" }, { "name": "text", "data": ", " }, { "name": "text", "data": "San Francisco" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ": " }, { "name": "text", "data": "97330B" }, { "name": "text", "data": "." } ], "title": "Advances in high-power 9xx nm laser diodes for pumping fiber lasers" } ] }, { "id": "R2", "label": "[2]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BACHMANN F" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Industrial applications of high power diode lasers in materials processing" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Appl. Surf. Sci." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2003" }, { "name": "text", "data": ", " }, { "name": "text", "data": "208-209" }, { "name": "text", "data": ":" }, { "name": "text", "data": "125" }, { "name": "text", "data": "-" }, { "name": "text", "data": "136" }, { "name": "text", "data": "." } ], "title": "Industrial applications of high power diode lasers in materials processing" } ] }, { "id": "R3", "label": "[3]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LEPSELTER J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ELMAN M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Biological and clinical aspects in laser hair removal" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Dermatolog. Treat." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2004" }, { "name": "text", "data": ", " }, { "name": "text", "data": "15" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "72" }, { "name": "text", "data": "-" }, { "name": "text", "data": "83" } ], "title": "Biological and clinical aspects in laser hair removal" } ] }, { "id": "R4", "label": "[4]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "陈湘君" }, { "name": "text", "data": ", " }, { "name": "text", "data": "陈自来" }, { "name": "text", "data": ". " }, { "name": "text", "data": "固体激光雷达的发展现状" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "红外与激光工程" }, { "name": "text", "data": ", " }, { "name": "text", "data": "1998" }, { "name": "text", "data": ", " }, { "name": "text", "data": "27" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "24" }, { "name": "text", "data": "-" }, { "name": "text", "data": "28" }, { "name": "text", "data": "." } ], "title": "固体激光雷达的发展现状" }, { "lang": "en", "text": [ { "name": "text", "data": "CHEN X J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN Z L" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development of the solid laser radar" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Infrared Laser Eng." }, { "name": "text", "data": ", " }, { "name": "text", "data": "1998" }, { "name": "text", "data": ", " }, { "name": "text", "data": "27" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "24" }, { "name": "text", "data": "-" }, { "name": "text", "data": "28" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Development of the solid laser radar" } ] }, { "id": "R5", "label": "[5]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "曼玉选" }, { "name": "text", "data": ", " }, { "name": "text", "data": "仲莉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "马骁宇" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "极低内部光学损耗975 nm半导体激光器" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "光学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "40" }, { "name": "text", "data": "(" }, { "name": "text", "data": "19" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1914001-1-5" }, { "name": "text", "data": "." } ], "title": "极低内部光学损耗975 nm半导体激光器" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHANG M X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHONG L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MA X Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "975 nm semiconductor lasers with ultra-low internal optical loss" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Acta Opt. Sinica" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "40" }, { "name": "text", "data": "(" }, { "name": "text", "data": "19" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1914001-1-5" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "975 nm semiconductor lasers with ultra-low internal optical loss" } ] }, { "id": "R6", "label": "[6]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MA S J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG Y P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SODABANLU H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Cryst. Growth" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "370" }, { "name": "text", "data": ":" }, { "name": "text", "data": "157" }, { "name": "text", "data": "-" }, { "name": "text", "data": "162" }, { "name": "text", "data": "." } ], "title": "Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure" } ] }, { "id": "R7", "label": "[7]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "杜石磊" }, { "name": "text", "data": ". " }, { "name": "text", "data": "脊型波导形状对单模半导体激光器输出特性的影响研究" }, { "name": "text", "data": "[D]." }, { "name": "text", "data": "长春" }, { "name": "text", "data": ":" }, { "name": "text", "data": "长春理工大学" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": "." } ], "title": "脊型波导形状对单模半导体激光器输出特性的影响研究" }, { "lang": "en", "text": [ { "name": "text", "data": "DU S L" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Study on the Output Characteristics of Single-mode Semiconductor Laser with Different Shape of Ridge Waveguide" }, { "name": "text", "data": "[D]." }, { "name": "text", "data": "Changchun" }, { "name": "text", "data": ":" }, { "name": "text", "data": "Changchun University of Science and Technology" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Study on the Output Characteristics of Single-mode Semiconductor Laser with Different Shape of Ridge Waveguide" } ] }, { "id": "R8", "label": "[8]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王立军" }, { "name": "text", "data": ", " }, { "name": "text", "data": "宁永强" }, { "name": "text", "data": ", " }, { "name": "text", "data": "秦莉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率半导体激光器研究进展" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": "." } ], "title": "大功率半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "WANG L J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NING Y Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "QIN L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development of high power diode laser" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Development of high power diode laser" } ] }, { "id": "R9", "label": "[9]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "江先锋" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张丽芳" }, { "name": "text", "data": ", " }, { "name": "text", "data": "郭栓银" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "高温硬焊料准连续半导体激光器巴条叠阵的性能研究" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "563" }, { "name": "text", "data": "-" }, { "name": "text", "data": "566" }, { "name": "text", "data": "." } ], "title": "高温硬焊料准连续半导体激光器巴条叠阵的性能研究" }, { "lang": "en", "text": [ { "name": "text", "data": "JIANG X F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG L F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GUO S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Research on performance of high temperature hard solder diode laser array" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "563" }, { "name": "text", "data": "-" }, { "name": "text", "data": "566" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Research on performance of high temperature hard solder diode laser array" } ] }, { "id": "R10", "label": "[10]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李明山" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张文平" }, { "name": "text", "data": ", " }, { "name": "text", "data": "王石语" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "高温环境下大功率DPL的LD最佳散热效果" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "红外与激光工程" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "37" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "221" }, { "name": "text", "data": "-" }, { "name": "text", "data": "225" }, { "name": "text", "data": "." } ], "title": "高温环境下大功率DPL的LD最佳散热效果" }, { "lang": "en", "text": [ { "name": "text", "data": "LI M S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG W P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optimal thermal dissipation of LD in high power DPL under high temperature environment" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Infrared Laser Eng." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "37" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "221" }, { "name": "text", "data": "-" }, { "name": "text", "data": "225" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Optimal thermal dissipation of LD in high power DPL under high temperature environment" } ] }, { "id": "R11", "label": "[11]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KANAZAWA S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TAKEDA K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MIYAMOTO T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser" }, { "name": "text", "data": "[C]." }, { "name": "text", "data": "Proceedings of the SPIE 6352 Optoelectronic Materials and Devices" }, { "name": "text", "data": ", " }, { "name": "text", "data": "Gwangju" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2006" }, { "name": "text", "data": ": " }, { "name": "text", "data": "63520L" }, { "name": "text", "data": "." } ], "title": "High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser" } ] }, { "id": "R12", "label": "[12]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CRUMP P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BLUME G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PASCHKE K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96 μm" }, { "name": "text", "data": "[C]." }, { "name": "text", "data": "Proceedings of the SPIE 7198 High-power Diode Laser Technology and Applications Ⅶ" }, { "name": "text", "data": ", " }, { "name": "text", "data": "San Jose" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2009" }, { "name": "text", "data": ": " }, { "name": "text", "data": "719814" }, { "name": "text", "data": "." } ], "title": "20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96 μm" } ] }, { "id": "R13", "label": "[13]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HÜLSEWEDE R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZORN M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient and high-brightness broad area laser diodes designed for high-temperature operation:advantages of semiconductor laser diodes as efficient high-power laser light sources applicable at elevated ambient temperatures" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "PhotonicsViews" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "17" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "52" }, { "name": "text", "data": "-" }, { "name": "text", "data": "56" }, { "name": "text", "data": "." } ], "title": "Efficient and high-brightness broad area laser diodes designed for high-temperature operation:advantages of semiconductor laser diodes as efficient high-power laser light sources applicable at elevated ambient temperatures" } ] }, { "id": "R14", "label": "[14]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李再金" }, { "name": "text", "data": ", " }, { "name": "text", "data": "芦鹏" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李特" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2012" }, { "name": "text", "data": ", " }, { "name": "text", "data": "33" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "647" }, { "name": "text", "data": "-" }, { "name": "text", "data": "650" }, { "name": "text", "data": "." } ], "title": "1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性" }, { "lang": "en", "text": [ { "name": "text", "data": "LI Z J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LU P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2012" }, { "name": "text", "data": ", " }, { "name": "text", "data": "33" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "647" }, { "name": "text", "data": "-" }, { "name": "text", "data": "650" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode" } ] }, { "id": "R15", "label": "[15]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "刘旭" }, { "name": "text", "data": ", " }, { "name": "text", "data": "程勇" }, { "name": "text", "data": ", " }, { "name": "text", "data": "万强" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "高温激光二极管抽运全固态激光器" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "43" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "):" }, { "name": "text", "data": "0701003-1-6" }, { "name": "text", "data": "." } ], "title": "高温激光二极管抽运全固态激光器" }, { "lang": "en", "text": [ { "name": "text", "data": "LIU X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHENG Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WAN Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "High temperature laser diode pumped all-solid-state laser" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chin. J. Lasers" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "43" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "):" }, { "name": "text", "data": "0701003-1-6" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "High temperature laser diode pumped all-solid-state laser" } ] }, { "id": "R16", "label": "[16]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG Z F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG G W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "High power, high efficiency continuous-wave 808 nm laser diode arrays" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Opt. Laser Technol." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "97" }, { "name": "text", "data": ":" }, { "name": "text", "data": "297" }, { "name": "text", "data": "-" }, { "name": "text", "data": "301" }, { "name": "text", "data": "." } ], "title": "High power, high efficiency continuous-wave 808 nm laser diode arrays" } ] }, { "id": "R17", "label": "[17]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PIPREK J" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Advanced analysis of high-temperature failure mechanisms in telecom lasers" }, { "name": "text", "data": "[C]." }, { "name": "text", "data": "Proceedings of the SPIE 4533 Semiconductor Lasers for Lightwave Communication Systems" }, { "name": "text", "data": ", " }, { "name": "text", "data": "Denver" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2001" }, { "name": "text", "data": ": " }, { "name": "text", "data": "70" }, { "name": "text", "data": "-" }, { "name": "text", "data": "81" }, { "name": "text", "data": "." } ], "title": "Advanced analysis of high-temperature failure mechanisms in telecom lasers" } ] }, { "id": "R18", "label": "[18]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CRUMP P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GRIMSHAW M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "85% power conversion efficiency 975-nm broad area diode lasers at -50 ℃,76% at 10 ℃" }, { "name": "text", "data": "[C]." }, { "name": "text", "data": "Proceedings of the 2006 Conference on Lasers and Electro-optics and 2006 Quantum Electronics and Laser Science Conference" }, { "name": "text", "data": ", " }, { "name": "text", "data": "Long Beach" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2006" }, { "name": "text", "data": ": " }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2" }, { "name": "text", "data": "." } ], "title": "85% power conversion efficiency 975-nm broad area diode lasers at -50 ℃,76% at 10 ℃" } ] }, { "id": "R19", "label": "[19]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KANSKAR M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "EARLES T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GOODNOUGH T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems" }, { "name": "text", "data": "[C]." }, { "name": "text", "data": "Proceedings of the SPIE 5738 Novel In-plane Semiconductor Lasers Ⅳ" }, { "name": "text", "data": ", " }, { "name": "text", "data": "San Jose" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2005" }, { "name": "text", "data": ": " }, { "name": "text", "data": "47" }, { "name": "text", "data": "-" }, { "name": "text", "data": "56" }, { "name": "text", "data": "." } ], "title": "High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems" } ] }, { "id": "R20", "label": "[20]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "刘恩科" }, { "name": "text", "data": ", " }, { "name": "text", "data": "朱秉升" }, { "name": "text", "data": ", " }, { "name": "text", "data": "罗晋生" }, { "name": "text", "data": ". " }, { "name": "text", "data": "半导体物理学" }, { "name": "text", "data": "[M]. 第" }, { "name": "text", "data": "4" }, { "name": "text", "data": "版. " }, { "name": "text", "data": "北京" }, { "name": "text", "data": ":" }, { "name": "text", "data": "国防工业出版社" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": "." } ], "title": "半导体物理学" }, { "lang": "en", "text": [ { "name": "text", "data": "LIU E K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU B S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LUO J S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Semiconductor Physics" }, { "name": "text", "data": " [M]." }, { "name": "text", "data": "4" }, { "name": "text", "data": "th ed. " }, { "name": "text", "data": "Beijing" }, { "name": "text", "data": ":" }, { "name": "text", "data": "National Defense Industry Press" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": " " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Semiconductor Physics" } ] }, { "id": "R21", "label": "[21]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "宋云菲" }, { "name": "text", "data": ", " }, { "name": "text", "data": "王贞福" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李特" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "808 nm半导体激光芯片电光转换效率的温度特性机理研究" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "物理学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "66" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "):" }, { "name": "text", "data": "104202-1-6" }, { "name": "text", "data": "." } ], "title": "808 nm半导体激光芯片电光转换效率的温度特性机理研究" }, { "lang": "en", "text": [ { "name": "text", "data": "SONG Y F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG Z F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficiency analysis of 808 nm laser diode array under different operating temperatures" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Acta Phys. Sinica" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "66" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "):" }, { "name": "text", "data": "104202-1-6" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Efficiency analysis of 808 nm laser diode array under different operating temperatures" } ] }, { "id": "R22", "label": "[22]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FREVERT C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CRUMP P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BUGGE F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Semiconductor Sci. Technol." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "31" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "025003" }, { "name": "text", "data": "." } ], "title": "The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20210014", "clc": [ [ { "name": "text", "data": "TN248.4" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2021)05-0674-08", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（61504167）；陕西省自然科学基金（2019ZY-CXPT-03-05，2018JM6010，2015JQ6263）；陕西省科技厅人才项目（2017KJXX-72）资助" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China (61504167); Natural Science Foundation of Shaanxi Province (2019ZY-CXPT-03-05, 2018JM6010, 2015JQ6263); Talent Project of Science and Technology Department of Shaanxi Province (2017KJXX-72)" } ] } ], "history": { "received": "2021-01-05", "revised": "2021-01-19", "ppub": "2021-05-01", "opub": "2021-10-22" }, "copyright": { "data": [], "year": "2021" } }, "appendix": [], "type": "announcement", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "05", "volume": "42", "originalSource": [] }