通过氧源调控原子层沉积的SnO_x层实现高效稳定的钙钛矿太阳能电池 增强出版

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"first-author" ], "bio": [ { "lang": "zh", "text": [ "谢怿（1997-），男，广东湛江人，硕士研究生，2020年于天津理工大学获得学士学位，主要从事钙钛矿太阳能电池中原子层沉积的研究。E-mail： sayie210@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032141&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032149&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032145&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "谢怿" }, { "name": "text", "data": "（1997-），男，广东湛江人，硕士研究生，2020年于天津理工大学获得学士学位，主要从事钙钛矿太阳能电池中原子层沉积的研究。E-mail： " }, { "name": "text", "data": "sayie210@163.com" } ] ] } ], "email": "sayie210@163.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "吴", "givenname": "绍航", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WU", "givenname": "Shaohang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： wushaohang@jnu.edu.cn", "data": [ { "name": "text", "data": "E-mail： wushaohang@jnu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "吴绍航（1987-），男，广西贵港人，博士，副研究员，2015年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高效稳定的钙钛矿太阳电池的研究。E-mail： wushaohang@jnu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032153&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032161&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032157&type=", "width": "24.89200020", "height": "29.88733101", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "吴绍航" }, { "name": "text", "data": "（1987-），男，广西贵港人，博士，副研究员，2015年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高效稳定的钙钛矿太阳电池的研究。E-mail： " }, { "name": "text", "data": "wushaohang@jnu.edu.cn" } ] ] } ], "email": "wushaohang@jnu.edu.cn", 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"prefix": "" }, { "lang": "en", "surname": "MAI", "givenname": "Yaohua", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "暨南大学 信息科学技术学院， 新能源技术研究院， 广东 广州　510632", "data": [ { "name": "text", "data": "暨南大学 信息科学技术学院， 新能源技术研究院， 广东 广州　510632" } ] }, { "lang": "en", "text": "Institute of New Energy Technology， College of Information Science and Technology， Jinan University， Guangzhou 510632， China", "data": [ { "name": "text", "data": "Institute of New Energy Technology， College of Information Science and Technology， Jinan University， Guangzhou 510632， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "原子层沉积的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜具有良好的均匀性和致密性，常被用于提升倒置平面结构钙钛矿太阳能电池的稳定性。而SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜的特性对器件能量转换效率（Power conversion efficiency，PCE）有着重要影响。本文通过氧源（H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O、O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）调控SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜的能级和导电性，提升器件PCE。结果表明，O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为单一氧源的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜（记为O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "‐SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）具有较优的能级排列；而只有H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作氧源的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜（记为H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O‐SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）具有较高的电导率。而采用O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O混合氧源制备的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（记为MIX‐SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "），则兼顾了能级匹配和良好的导电性，有效提升器件的PCE，达到20.9%。不仅如此，得益于SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜的致密结构，有效避免了外部水氧的入侵和内部材料的分解流失，从而提升了器件稳定性，在85 ℃（氮气气氛）下老化超过646 h仍能维持初始PCE的86%以上。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " deposited by atomic layer deposition exhibits uniform and dense nature， which is commonly used to improve the stability of inverted planar perovskite solar cells. Meanwhile， the characteristics of SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " films have an essential impact on power conversion efficiency（PCE） of devices. In this paper， the characteristics of atomic-layer-deposited SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " are adjusted by the oxygen sources（H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O， O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）， including energy level and conductivity， so as to achieve the improvement of PCE of devices. The results show that the SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " film with O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " as a single oxygen source has good energy level alignment. SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "， which only has water as an oxygen source （denoted H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）， performs higher electrical conductivity. While， taking advantage of mentioned sources， the SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " （denoted as MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "） not only obtains good energy level alignment， but also excellent conductivity， which effectively improves the PCE of the devices， reaching 20.9%. Moreover， thanks to the denseness of SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " film， it can largely prevent the ingress of moisture into devices， and also inhibit the decomposition of perovskite， dramatically enhancing the stability of perovskite solar cells， which can retain 86% of initial PCE after aging at 85 ℃ （nitrogen atmosphere） for more than 646 h." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "钙钛矿太阳能电池" } ], [ { "name": "text", "data": "原子层沉积" } ], [ { "name": "text", "data": "氧源调控" } ], [ { "name": "text", "data": "SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "perovskite solar cells" } ], [ { "name": "text", "data": "atomic layer deposition" } ], [ { "name": "text", "data": "oxygen resources adjustment" } ], [ { "name": "text", "data": "SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "高能量转换效率（Power conversion efficiency，PCE）和高稳定性是钙钛矿太阳能电池（Perovskite solar cells，PSCs）成功实现产业化的先决条件，而界面层性质是影响PSCs PCE和稳定性的关键因素之一。特别是钙钛矿（PVK）和背电极之间的界面层：一方面，材料稳定且结构致密的界面层有利于保护PVK层，既可避免PVK组分流失又可屏蔽外部因素侵蚀，从而提升器件稳定性；另一方面，能级匹配且导电性好的界面层有利于载流子抽取，从而提升器件PCE" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，PSCs中的界面层往往需要兼具性质稳定、结构致密、能级匹配和电导性好等优点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "和NiO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "等氧化物通常具有良好的材料稳定性而且能级和导电性可调，因此常被应用于高效稳定PSCs的界面层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R3", "R4", "R5" ], "text": "3-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。原子层沉积技术（Atomic layer deposition，ALD）具有独特的优势，容易得到致密薄膜。对于ALD氧化物而言，ALD NiO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "通常需要更高温度（150 ℃以上），而ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "则温度较低（可低至80 ℃）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "更容易沉积到PVK层之上，在PVK层和背电极之间获得结构致密且电学性能可调的界面层。可见，从工艺和材料的角度上看，倒置平面结构更容易与ALD技术结合，实现高效稳定的PSCs。早在2017年，Riedl等采用ALD技术制备SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "作为PSCs的电子传输层（Electron transport layer, ETL），实现了12.8%的PCE" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。致密的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "有效地保护了PVK层，从而提升了器件的稳定性。优化的器件在60 ℃（氮气气氛）下热老化1 000 h后PCE无衰减。2018年， Park等利用ALD将致密的掺铝氧化锌（AZO）薄膜应用于倒置平面PSCs中，实现了18.45%的PCE，器件在空气环境下经一个太阳光强老化超过500 h后仍能保持初始PCE的86.7%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以上文献表明， 将ALD应用于倒置结构中沉积ETL，能利用所沉积薄膜致密稳定的特性，实现隔绝外部水氧和抑制内部分解，从而大幅提升器件稳定性。此外，ALD制备SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "还常被用于叠层电池以避免工艺过程中溶液对底电池的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。实际上，SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "已经被证明是很好的N型界面材料，经过精细调控后，应用于正置结构器件时可以实现25%以上的PCE" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是对于倒置平面结构中的ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "依然缺乏系统的调控。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "研究表明，不同于四氯化锡（SnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）等无机锡源需要依赖高沉积温度（300~500 ℃）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，四（二甲氨基）锡（TDMASn）等有机锡源能够在低温下（" }, { "name": "text", "data": "<" }, { "name": "text", "data": "300 ℃）沉积SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "，并且获得更优的电学性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；除此之外，在同样的沉积温度下，在采用N-,N'-叔丁基-1,1-二甲基乙二胺亚锡-（Ⅱ）作锡源时，分别采用H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O和O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作氧源，最终薄膜会分别以SnO和SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的形式存在" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由此可见，反应源是影响薄膜特性的关键因素。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过氧源调控SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "性能，从而调控器件性能。采用H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O、O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "及两者的混合源作为氧源，TDMASn作为锡源，制备SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜。结果显示，利用O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为氧源的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（记为O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）能级匹配更优； H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作为氧源的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（记为H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）电阻率较低。结合两者后的混合源所生成的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（记为MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）则兼具两者的特点，表现出了更为优异的性能，有效地提升了器件的填充因子（FF），最终实现20.9%的PCE。另外，得益于ALD技术的特点，SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表现出相当的致密性，提升了器件的稳定性，在85 ℃（氮气气氛）下老化超过646 h仍能维持初始PCE的86%以上。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　试剂与材料" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "碘化铅（PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "," }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.99%）、甲基溴化铵（MABr," }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.5%）、碘化铯（CsI," }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.9%）、溴化铅（PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.99%）、苯乙基铵（PEAI," }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.5%）和聚[双（4-苯基）（2,4,6-三甲基苯基）胺]（PTAA）、富勒烯C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "（C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": ",≥99.5%）购买自西安宝莱特科技有限公司。碘化甲脒（FAI, ≥99.99%）在greatcellsolar materials公司购买。氯苯（CB，99%）、异丙醇（IPA，99.5%）和N,N-二甲基甲酰胺（DMF，99.8%）购买自麦克林公司。氧化铝分散体（Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，30 nm）、二甲基亚砜（DMSO," }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.99%）购自Sigma-Aldrich。乙酸乙酯（EA，≥99%）购自阿拉丁公司。所有化学品均直接使用，无需进一步纯化。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　电池制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "PSCs的结构为铟锡氧化物（ITO）/PTAA/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "（FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "Pb（I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/PEAI/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/ 银（Ag）。在制备前，依次使用洗涤剂、去离子水、乙醇对刻蚀后的ITO衬底分别超声清洗20 min。完成清洗后，将1.5 mg PTAA粉末溶于1 mL CB中制备PTAA前驱液，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "用IPA进行1∶50稀释。这两种溶液先后在ITO衬底上以5 000 r/min和3 500 r/min分别旋转30 s，之后都在热台上进行120 ℃退火10 min。PVK配方是Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "（FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "Pb（I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，对应的前驱体溶液由FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（260 µL）、MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（40 µL）和CsI（15 µL）三种溶液混合而成。其中，FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "是在DMF∶DMSO（体积比为8∶2）的混合溶液中加入FAI（1.38 mol/L）和PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（1.5 mol/L）； MABr（1.38 mol/L）和PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（1.5 mol/L）在同样DMF∶DMSO（体积比为8∶2）的混合溶液中进行MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "前驱体溶液的制备。最后的CsI溶液是称量390 mg CsI溶解在1 mL DMSO中。PVK层的制备过程则是将PVK前驱体溶液涂覆在ITO/PTAA/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上，转速为4 000 r/min共40 s，最后10 s经EA反溶剂处理，紧接着100 ℃退火20 min。随后滴加PEAI溶液（1 mg/mL溶于IPA）在PVK表面以4 000 r/min转速旋转25 s，并放置于温度为100 ℃的热台退火10 min。结束旋涂后，将样品转移至蒸镀仓内，抽真空至5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa以0.2 A/s的速度进行C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "的蒸发。之后，进行SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的制备。腔体温度为110 ℃，最后SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜厚度约20 nm。在ALD反应沉积过程中除了氧源相关部分不同外，其余步骤均一致，具体的流程如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "采用不同氧源沉积SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的步骤" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "The procedures of SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " deposition using different oxygen sources" } ] } ], "note": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "vocab", "data": [ { "name": "text", "data": "注：" } ] }, { "name": "text", "data": "最后蒸镀Ag电极（150 nm），每个子电池电极交叠区域为0.35 cm×0.35 cm。" } ] } ] } ], "table": [ { "head": [ [ { "rowspan": "2", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "器件类别" } ] }, { "colspan": "9", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "步骤" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "锡源/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ms" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "等待时间/ms" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ms" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "等待时间/ms" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "锡源/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ms" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "等待时间/ms" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ms" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "等待时间/ms" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "循环次数/次" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O⁃SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "100" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "60" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "⁃SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "100" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "30" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "MIX⁃SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "100" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "60" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "100" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "30" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5 000" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "100" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032171&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032165&type=", "width": "162.79998779", "height": "32.65409851", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "X射线光电子能谱仪（X-ray photoelectron spectra, XPS）和紫外光电子能谱仪（Ultraviolet photoelectron spectroscopy，UPS）的型号皆为Thermo Scientific K-Alpha+，分别进行薄膜化学状态和能带的分析。采用型号为DektakXT的紫外-可见近红外分光光度计（UV-Vis）分析薄膜的吸收特性。采用Edinburgh FS5的荧光光谱仪测试光致发光（Photoluminescence, PL）光谱，进行载流子传输动力学研究。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "所有制备的太阳能电池均在空气环境下测试。电流密度-电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": ")曲线和性能参数由硅标准电池校准样品表面光强至100 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "后，使用孔径面积为0.09 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的模具对电池进行掩膜，经Keithley的2400数字源表和具有AM1.5 G光谱的Newport ORIEL-SOI3A 太阳模拟器测量。外部量子效率（External quantum efficiency, EQE）使用来自Enlitech的QE-R仪器由硅参考电池校准后测量。采用Bruker D8 Advance的 X射线衍射仪（X-ray diffraction，XRD）对薄膜物相进行分析。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　薄膜化学性质及电学参数" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "在本实验中，将不同氧源及其所对应沉积的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "分别简单记为H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O源）、O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "源）和MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O 与O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "混合，简记为混合源）。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "首先，为了研究不同氧源对SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜的表面化学组成和电子态性质的影响，我们进行XPS分析，表征结果如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）中Sn 3d谱图里显示着两个峰，分别为Sn 5/2和Sn 3/2，两组峰之间相差约8.4 eV，与Sn 3d轨道特征峰一致。对锡谱图进行相应的分峰拟合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " （Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的峰位为486.3 eV，Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "的峰位为486.7 eV），能够发现在H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "中，同时存在Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "和Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "的特征峰，而O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "只存在Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "的对称单峰。我们推测这是由于参与反应的氧源氧化性强弱所导致。很多文献采用H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作为氧化剂与有机锡源进行反应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但早在2014年就有研究结果发现，H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O的弱氧化性会引起反应沉积过程不充分，最终导致生成的薄膜导电性欠佳" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同样的结论可以从" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）的O 1s的谱图中得到。对不同的O 1s分峰拟合看出，H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "中存在着对应Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的氧（O-Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "），而O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "只有对应Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "的氧（O-Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "）。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "不同氧源所沉积ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的 XPS谱。 （a）Sn 3d；（b）O 1s。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "XPS spectra of ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " deposited with various oxygen resources. （a）Sn 3d. （b）O 1s." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032176&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032185&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032180&type=", "width": "134.52523804", "height": "49.67332458", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "值得关注的是，即便在有H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作氧源的情况下，适当引入O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "共同参与反应，最终也能有效地增强氧源的氧化性。在Sn 3d和O 1s谱图中，都能看出MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "呈现与O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "类似的结果，没有发现对应的Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、O-Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "相关的峰出现。除此之外，对于倒置平面结构而言，ETL在PVK层之上，因此作为ETL的ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "工艺温度通常不能太高，一般在110 ℃左右。而较低的温度制备ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜容易存在与杂质相关的氧峰（O-impurity），是化学反应性不足所导致，会随着生长温度的升高逐渐消失" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的能级和导电性会对器件PCE有重要影响。因此，我们对不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜进行了UPS测试。三种不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的UPS结果显示在图S1中。根据谱图，并借助以下公式计算出了相对应的导带值（" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032193&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032189&type=", "width": "41.57133484", "height": "3.72533321", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": " " } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032200&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032197&type=", "width": "3.64066648", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "是氦源的入射光子能量（21.22 eV），" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032207&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032204&type=", "width": "6.85799980", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "和" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032214&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032211&type=", "width": "6.51933336", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "分别为UPS谱图的二次电子截止边和起始边（在" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）和图S1）；" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032220&type=", "big": 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"text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "为-4.5，-4.07，-4.45 eV。可见，氧源能够影响SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的能级，并且由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）能带图（PVK" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ag" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的能级是从文献中获得）发现，O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的引入使得MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "和O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "变化明显，更有利于实现能级匹配，有助于电池PCE的提升。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的UPS截止边图；（b）能级匹配图；（c）在ITO/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Ag结构下的" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V" } ] }, { "name": "text", "data": "特性曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "（a）" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "cut-off" } ] }, { "name": "text", "data": " in UPS spectra of different SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": ". （b）Schematic diagram of the energy levels. （c）" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V " } ] }, { "name": "text", "data": "characteristics of different SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " thin films with the structure of ITO/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Ag." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032224&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032228&type=", "big": 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"xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "中。有趣的是，在前文中，尽管H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作为氧源会存在氧化性不足、能级排列欠佳的问题，但是能观察到H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "在测试过程中表现出最高的电导率。MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "具备仅次于H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的高电导率，可见在O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "参与反应的基础上，引入H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O能够很好地改善薄膜的电导率。有研究表明薄膜中的杂质氧（O-impurity）和Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "会影响薄膜的导电性，但是通过对比实验条件和结构（表S1），我们认为更有可能是H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O中的H被掺入到薄膜之中引起的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。除此之外，图S2 UV-Vis吸收谱图表明，H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "不仅电导率高，而且在300 nm以下波段的吸收是最少的。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "不同结构下的电阻，电导率（" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "）是根据公式" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032234&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032231&type=", "width": "15.15533447", "height": "2.53999996", "fontsize": "" } } } ] }, { "name": "text", "data": "计算得到，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "是测试的有效面积，" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "是薄膜厚度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Summary of the resistance with different structure，the conductivity（" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "） is calculated according to the formula " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032241&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032239&type=", "width": "14.47799969", "height": "2.53999996", "fontsize": "" } } } ] }, { "name": "text", "data": "， where " }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": " is the active area and " }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": " is the thickness of the film" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "/Ω" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "/cm" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": 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"name": "text", "data": "/H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O⁃SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Ag" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5.17" } ] }, { "align": "center", "data": [ { "name": "text", "data": "9" } ] }, { "align": "center", "data": [ { "name": "text", "data": "3.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "7.09×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "ITO/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "⁃SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Ag" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "8.52" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "9" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "3.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "4.30×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032247&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032244&type=", "width": "77.69583893", "height": "21.66875076", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "综合来看，不同氧源对SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜性质有着显著影响。O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为氧源时，沉积反应充分，能级匹配较好，但导电性差；而H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作为氧源时，能级排列较差，但导电性好。而将两种源进行结合，能对SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "实现很好的调控作用，得到的MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "不仅利用O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "实现能级匹配，也能保留H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的高导电性。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　光伏性能" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "我们进一步比较了C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "复合界面层的电荷抽取性能。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）所示，PVK薄膜引入C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "界面层后，PL光谱的强度急剧下降，而MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "对应的样品下降得最为明显。得益于更优的能级排列（如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示），这表明C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "能更有效地提取到光生电子。采用ITO/PTAA/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/PVK/PEAI/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Ag结构制作器件，器件的EQE绘制在" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）。采用MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的器件表现出最优的光电响应和最高的短路电流密度（" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sc" } ] }, { "name": "text", "data": "）。三者的典型器件在标准AM1.5 G光照条件下的反向扫描" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V" } ] }, { "name": "text", "data": "曲线及相关参数分别在" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）和" }, { "name": "xref", "data": { "text": "表3", "type": "table", "rid": "T3", "data": [ { "name": "text", "data": "表3" } ] } }, { "name": "text", "data": "中表示，所对应的正向扫描曲线表示在图S3中。作为对比，未采用ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V" } ] }, { "name": "text", "data": "曲线则放置在图S4中。通过软件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "拟合得到器件串联电阻（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "）和并联电阻（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sh" } ] }, { "name": "text", "data": "），拟合结果如" }, { "name": "xref", "data": { "text": "表3", "type": "table", "rid": "T3", "data": [ { "name": "text", "data": "表3" } ] } }, { "name": "text", "data": "和图S5所示。器件统计性能以箱线图的形式绘制于" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（d），具体参数列在表S2。可以看到，采用MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "器件性能是最优的，各项参数的分布都比其余两者高，其中FF、PCE两项参数平均值为78.7%和19.6%，PCE最高能达到20.9%。含有H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的器件各项参数略低于MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的器件，但分布趋势也较统一，平均PCE能够达到18.8%。对比而言，O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "器件只有少部分能正常工作，且参数均较低、波动较大，平均PCE只能达到16.8%。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）不同结构（ITO/PVK，ITO/PVK/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）下的PL光谱；（b）不同器件对应的EQE；（c）不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "器件的典型" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线；（d）不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "器件的PSCs的光伏参数统计分布。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a）PL spectra of perovskite films on different configuration（ITO/PVK，ITO/PVK/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）. （b） EQE of the corresponding devices. （c）Optimal " }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": " curves of different SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " " } ] }, { "name": "text", "data": "devices.（d）Statistics of photovoltaic parameters of PSCs having different SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": 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"data": "17.8" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "249.3" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "219.7" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032262&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032259&type=", "width": "77.69584656", "height": "33.22917175", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　稳定性测试" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "相关文献表明，外部环境对器件的侵蚀" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和器件内部PVK材料自身的分解" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "是影响器件稳定性的关键机制。因此，PVK层之上界面层的覆盖性和屏蔽性严重影响器件稳定性。我们借助原子力显微镜（Atomic force microscopy, AFM）研究了界面层C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面形貌，结果如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）。在只有PVK薄膜的样品其均方根（Root mean square, RMS）粗糙度为27.9 nm。当C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "沉积在PVK薄膜上时，RMS粗糙度为21.3 nm。而之后ALD所沉积的H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "、O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "和MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "sub", "data": [ { "name": "text", "data": " " } ] }, { "name": "text", "data": "RMS粗糙度分别为21.2，21.2，21.3 nm，和前一界面层的RMS粗糙度相差不大，这证明了ALD沉积薄膜的均匀性及保形性。为了简单检验ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "对外部因素入侵的屏蔽作用，我们在不同结构上滴加去离子水，观察其薄膜变化过程并拍照记录（如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）所示）。在滴加水的瞬间，仅有PVK层在接触到水的瞬间就开始变色; 而有C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "覆盖的PVK，则是在1 min内较缓慢变色; 至于PVK/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "，则是在10 min内仅有略微的分解。H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "保护器件的时间在三者中较短，最长则是O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "，MIX-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "居中。这与之前的XPS分析结果一致，O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "参与反应更加彻底，因而薄膜性质更好，更加致密。将O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O进行混合后参与反应，则在一定程度上提升了薄膜的性质，使其更加致密，更有利于抵御水的侵蚀。为了排除ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "疏水性能的影响，我们对三种ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "进行水接触角的测试（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）），结果显示水接触角均小于90°，呈现出亲水性。因此，可以判断ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜本身具备很好的致密性，使得外部的水汽不能轻易地渗入PVK层，从而保护了器件。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图 4" } ], "title": [ { "name": "text", "data": "（a）PVK、PVK/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "和PVK/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的AFM高度图；（b）滴水在不同薄膜表面随时间的变化；（c）不同薄膜结构的水接触角；（d）不同薄膜结构进行130 ℃、30 h热老化前后的XRD图；（e）不同SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "器件在氮气、85 ℃条件下的热稳定性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "（a）AFM images of perovskite， perovskite/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": " and perovskite/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": ". （b）Changes of water dropping on different films over time. （c）Water contact angle of different structures. （d）XRD patterns of different structures before and after thermal aging at 130 ℃ for 30 h. （e）Thermal stability of devices with different SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " under nitrogen at 85 ℃." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032265&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032270&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032268&type=", "width": "136.47085571", "height": "164.10397339", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于PVK材料中存在有机基团，特别是甲基铵（Methylammonium, MA）,容易在高温下流失，导致材料变性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } } ], "rid": [ "R27", "R28" ], "text": "27-28", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。致密的界面层可以抑制该过程，从而提升PVK稳定性。我们选取了跟滴水实验相同的实验分组，在手套箱的氮气氛围下以130 ℃热老化30 h，前后的结果如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（d）所示。可以看到，所有薄膜初始状态的XRD图谱并未有明显的差别，PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的峰也较弱。而在加热了30 h后，没有界面保护的薄膜PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "峰强显著上升，意味着PVK发生了很大程度的分解。C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "层的存在能减缓PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "分解。而PVK/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "在加热到30 h左右，PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的峰并未出现较大变化。我们推断C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "在这里起到一个屏障的作用，抑制了PVK的分解" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。将上述不同的ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "应用至PSCs，在氮气手套箱内对器件进行85 ℃热稳定性测试。老化结果如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（e）所示，所对应老化过程的" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V" } ] }, { "name": "text", "data": "曲线和前后EQE绘制在图S6和图S7中。在没有进行ALD沉积SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的器件，不到100 h PCE就已经衰减至初始PCE的1/10；相反，这三种SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的器件在经过600 h后仍能很好地工作，并且PCE衰减不明显。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过氧源调控了ALD SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的性能。研究表明O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作氧源时O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "能级匹配优、导电性差；而水源反应所生成的H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O-SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "能级匹配较差、电导率高。将这两种氧源进行结合，能够利用两者特点，具备高电导率的同时实现良好的能级匹配，最终提升了PSCs的PCE和稳定性。综合来看，利用ALD技术可以在PVK上低温制备结构致密且性能可控的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜，与倒置结构PSCs（包括单节和叠层）技术兼容，有利于实现高效稳定的PSCs。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文补充文件和专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220325." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220325." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BOYD C C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEACHAROEN R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LEIJTENS T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Understanding degradation mechanisms and improving stability of perovskite photovoltaics" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chem. Rev." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "119" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "3418" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3451" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acs.chemrev.8b00336" } ], "href": "http://dx.doi.org/10.1021/acs.chemrev.8b00336" } } ], "title": "Understanding degradation mechanisms and improving stability of perovskite photovoltaics" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHOU H P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEN Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LI G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Interface engineering of highly efficient perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Science" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "， " }, { "name": "text", "data": "345" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6196" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "542" }, { "name": "text", "data": "-" }, { "name": "text", "data": "546" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1126/science.1254050" } ], "href": "http://dx.doi.org/10.1126/science.1254050" } } ], "title": "Interface engineering of highly efficient perovskite solar cells" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WU Y Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YUE Y F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient and stable large-area perovskite solar cells with inorganic charge extraction layers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Science" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "350" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6263" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "944" }, { "name": "text", "data": "-" }, { "name": "text", "data": "948" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1126/science.aad1015" } ], "href": "http://dx.doi.org/10.1126/science.aad1015" } } ], "title": "Efficient and stable large-area perovskite solar cells with inorganic charge extraction layers" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ERDENEBILEG E" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LI J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Low-temperature atomic layer deposited electron transport layers for co-evaporated perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Solar RRL" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "6" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2100842" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/solr.202100842" } ], "href": "http://dx.doi.org/10.1002/solr.202100842" } } ], "title": "Low-temperature atomic layer deposited electron transport layers for co-evaporated perovskite solar cells" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SEO S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JEONG S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "PARK H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Atomic layer deposition for efficient and stable perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chem. Commun." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "55" }, { "name": "text", "data": "（" }, { "name": "text", "data": "17" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2403" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2416" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1039/c8cc09578g" } ], "href": "http://dx.doi.org/10.1039/c8cc09578g" } } ], "title": "Atomic layer deposition for efficient and stable perovskite solar cells" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "RAIFORD J A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "OYAKHIRE S T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BENT S F" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Energy Environ. Sci." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1997" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2023" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1039/d0ee00385a" } ], "href": "http://dx.doi.org/10.1039/d0ee00385a" } } ], "title": "Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BRINKMANN K O" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAO J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "POURDAVOUD N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Suppressed decomposition of organometal halide perovskites by impermeable electron-extraction layers in inverted solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Commun." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "8" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "13938-1-9" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/ncomms13938" } ], "href": "http://dx.doi.org/10.1038/ncomms13938" } } ], "title": "Suppressed decomposition of organometal halide perovskites by impermeable electron-extraction layers in inverted solar cells" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SEO S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JEONG S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BAE C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Perovskite solar cells with inorganic electron-and hole-transport layers exhibiting long-term （≈500 h） stability at 85 ℃ under continuous 1 sun illumination in ambient air" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "30" }, { "name": "text", "data": "（" }, { "name": "text", "data": "29" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1801010-1-8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adma.201801010" } ], "href": "http://dx.doi.org/10.1002/adma.201801010" } } ], "title": "Perovskite solar cells with inorganic electron-and hole-transport layers exhibiting long-term （≈500 h） stability at 85 ℃ under continuous 1 sun illumination in ambient air" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XIAO K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIN Y H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Scalable processing for realizing 21.7%-efficient all-perovskite tandem solar modules" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Science" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "376" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6594" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "762" }, { "name": "text", "data": "-" }, { "name": "text", "data": "767" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1126/science.abn7696" } ], "href": "http://dx.doi.org/10.1126/science.abn7696" } } ], "title": "Scalable processing for realizing 21.7%-efficient all-perovskite tandem solar modules" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "REN N Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHU C J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LI R J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "50 ℃ low-temperature ALD SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " driven by H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " for efficient perovskite and perovskite/silicon tandem solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "121" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "033502-1-7" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/5.0091311" } ], "href": "http://dx.doi.org/10.1063/5.0091311" } } ], "title": "50 ℃ low-temperature ALD SnO2 driven by H2O2 for efficient perovskite and perovskite/silicon tandem solar cells" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YOO J J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SEO G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHUA M R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient perovskite solar cells " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " improved carrier management" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nature" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "， " }, { "name": "text", "data": "590" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7847" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "587" }, { "name": "text", "data": "-" }, { "name": "text", "data": "593" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/s41586-021-03285-w" } ], "href": "http://dx.doi.org/10.1038/s41586-021-03285-w" } } ], "title": "Efficient perovskite solar cells via improved carrier management" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHENG H E" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TIAN D C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HUANG K C" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Properties of SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " films grown by atomic layer deposition" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Procedia Eng." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2012" }, { "name": "text", "data": "， " }, { "name": "text", "data": "36" }, { "name": "text", "data": "： " }, { "name": "text", "data": "510" }, { "name": "text", "data": "-" }, { "name": "text", "data": "515" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1016/j.proeng.2012.03.074" } ], "href": "http://dx.doi.org/10.1016/j.proeng.2012.03.074" } } ], "title": "Properties of SnO2 films grown by atomic layer deposition" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DU X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DU Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GEORGE S M" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "In" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "situ" } ] }, { "name": "text", "data": " examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Vac. Sci. Technol. A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2005" }, { "name": "text", "data": "， " }, { "name": "text", "data": "23" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "581" }, { "name": "text", "data": "-" }, { "name": "text", "data": "588" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1116/1.1914810" } ], "href": "http://dx.doi.org/10.1116/1.1914810" } } ], "title": "In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ELAM J W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BAKER D A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HRYN A J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Atomic layer deposition of tin oxide films using tetrakis （dimethylamino） tin" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Vac. Sci. Technol. A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2008" }, { "name": "text", "data": "， " }, { "name": "text", "data": "26" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "244" }, { "name": "text", "data": "-" }, { "name": "text", "data": "252" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1116/1.2835087" } ], "href": "http://dx.doi.org/10.1116/1.2835087" } } ], "title": "Atomic layer deposition of tin oxide films using tetrakis （dimethylamino） tin" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HU T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BECKER T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "POURDAVOUD N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Indium-free perovskite solar cells enabled by impermeable tin-oxide electron extraction layers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "29" }, { "name": "text", "data": "（" }, { "name": "text", "data": "27" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1606656-1-9" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adma.201606656" } ], "href": "http://dx.doi.org/10.1002/adma.201606656" } } ], "title": "Indium-free perovskite solar cells enabled by impermeable tin-oxide electron extraction layers" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LEE J H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YOO M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KANG D H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Selective SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " atomic layer deposition driven by oxygen reactants" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Appl. Mater. Interfaces" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "39" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "33335" }, { "name": "text", "data": "-" }, { "name": "text", "data": "33342" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsami.8b12251" } ], "href": "http://dx.doi.org/10.1021/acsami.8b12251" } } ], "title": "Selective SnOx atomic layer deposition driven by oxygen reactants" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MULLINGS M N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HÄGGLUND C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BENT S F" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Tin oxide atomic layer deposition from tetrakis （dimethylamino） tin and water" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Vac. Sci. Technol. A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2013" }, { "name": "text", "data": "， " }, { "name": "text", "data": "31" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "061503-1-8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1116/1.4812717" } ], "href": "http://dx.doi.org/10.1116/1.4812717" } } ], "title": "Tin oxide atomic layer deposition from tetrakis （dimethylamino） tin and water" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MACKUS A J M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MACISAAC C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KIM W H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide， tin-oxide， and zinc-tin-oxide" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Chem. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "146" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "052802-1-11" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.4961459" } ], "href": "http://dx.doi.org/10.1063/1.4961459" } } ], "title": "Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide， tin-oxide， and zinc-tin-oxide" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHOI D W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MAENG W J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "PARK J S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The conducting tin oxide thin films deposited " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Surf. Sci." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "， " }, { "name": "text", "data": "313" }, { "name": "text", "data": "： " }, { "name": "text", "data": "585" }, { "name": "text", "data": "-" }, { "name": "text", "data": "590" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1016/j.apsusc.2014.06.027" } ], "href": "http://dx.doi.org/10.1016/j.apsusc.2014.06.027" } } ], "title": "The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics" } ] }, { "id": "R20", "label": "20", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHOI D W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "PARK J S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly conductive SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Surf. Coat. Technol." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "， " }, { "name": "text", "data": "259" }, { "name": "text", "data": "： " }, { "name": "text", "data": "238" }, { "name": "text", "data": "-" }, { "name": "text", "data": "243" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1016/j.surfcoat.2014.02.012" } ], "href": "http://dx.doi.org/10.1016/j.surfcoat.2014.02.012" } } ], "title": "Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant" } ] }, { "id": "R21", "label": "21", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI F M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SHEN Z T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WENG Y J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Novel electron transport layer material for perovskite solar cells with over 22% efficiency and long-term stability" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Funct. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "30" }, { "name": "text", "data": "（" }, { "name": "text", "data": "45" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2004933-1-9" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adfm.202004933" } ], "href": "http://dx.doi.org/10.1002/adfm.202004933" } } ], "title": "Novel electron transport layer material for perovskite solar cells with over 22% efficiency and long-term stability" } ] }, { "id": "R22", "label": "22", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LEE M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KIM D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LEE Y K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Indene-C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": " bisadduct electron-transporting material with the high LUMO level enhances open-circuit voltage and efficiency of tin-based perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Appl. Energy Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "3" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "5581" }, { "name": "text", "data": "-" }, { "name": "text", "data": "5588" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsaem.0c00535" } ], "href": "http://dx.doi.org/10.1021/acsaem.0c00535" } } ], "title": "Indene-C60 bisadduct electron-transporting material with the high LUMO level enhances open-circuit voltage and efficiency of tin-based perovskite solar cells" } ] }, { "id": "R23", "label": "23", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XU C Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG Y W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LUO P F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Comparative study on TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": " electron transport layers for efficient perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Appl. Energy Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "， " }, { "name": "text", "data": "4" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "5543" }, { "name": "text", "data": "-" }, { "name": "text", "data": "5553" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsaem.1c00226" } ], "href": "http://dx.doi.org/10.1021/acsaem.1c00226" } } ], "title": "Comparative study on TiO2 and C60 electron transport layers for efficient perovskite solar cells" } ] }, { "id": "R24", "label": "24", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MACCO B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WU Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "VANHEMEL D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High mobility In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Phys. Status Solidi （RRL）‐Rapid Res. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "， " }, { "name": "text", "data": "8" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "987" }, { "name": "text", "data": "-" }, { "name": "text", "data": "990" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/pssr.201409426" } ], "href": "http://dx.doi.org/10.1002/pssr.201409426" } } ], "title": "High mobility In2O3∶H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization" } ] }, { "id": "R25", "label": "25", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KOIDA T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SAI H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KONDO M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶H transparent conductive oxide films with high mobility and near infrared transparency for optoelectronic applications" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Surf. Eng." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2012" }, { "name": "text", "data": "， " }, { "name": "text", "data": "28" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "102" }, { "name": "text", "data": "-" }, { "name": "text", "data": "107" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1179/1743294411y.0000000053" } ], "href": "http://dx.doi.org/10.1179/1743294411y.0000000053" } } ], "title": "In2O3∶H transparent conductive oxide films with high mobility and near infrared transparency for optoelectronic applications" } ] }, { "id": "R26", "label": "26", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SUCKOW S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "2" }, { "name": "text", "data": "/" }, { "name": "text", "data": "3" }, { "name": "text", "data": "-Diode Fit" }, { "name": "text", "data": " ［EB/OL］. " }, { "name": "text", "data": "2014-12-03" }, { "name": "text", "data": ". " }, { "name": "uri", "data": { "text": [ { "name": "text", "data": "https：//nanohub.org/resources/14300" } ], "href": "https://nanohub.org/resources/14300" } }, { "name": "text", "data": "." } ], "title": "-Diode Fit" } ] }, { "id": "R27", "label": "27", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BERHE T A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SU W N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEN C H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Organometal halide perovskite solar cells： degradation and stability" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Energy Environ. Sci." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "， " }, { "name": "text", "data": "9" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "323" }, { "name": "text", "data": "-" }, { "name": "text", "data": "356" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1039/c5ee02733k" } ], "href": "http://dx.doi.org/10.1039/c5ee02733k" } } ], "title": "Organometal halide perovskite solar cells： degradation and stability" } ] }, { "id": "R28", "label": "28", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CONINGS B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DRIJKONINGEN J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GAUQUELIN N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Intrinsic thermal instability of methylammonium lead trihalide perovskite" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Energy Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "5" }, { "name": "text", "data": "（" }, { "name": "text", "data": "15" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1500477-1-8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/aenm.201500477" } ], "href": "http://dx.doi.org/10.1002/aenm.201500477" } } ], "title": "Intrinsic thermal instability of methylammonium lead trihalide perovskite" } ] }, { "id": "R29", "label": "29", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DUNFIELD S P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BLISS L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "From defects to degradation： a mechanistic understanding of degradation in perovskite solar cell devices and modules" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Energy Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "26" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1904054-1-35" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/aenm.201904054" } ], "href": "http://dx.doi.org/10.1002/aenm.201904054" } } ], "title": "From defects to degradation： a mechanistic understanding of degradation in perovskite solar cell devices and modules" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220325", "clc": [ [ { "name": "text", "data": "TM914.4" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032（2023）02-0337-09", "citeme": [ { "data": [ { "name": "text", "data": "谢怿,吴绍航,高彦艳等.通过氧源调控原子层沉积的SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层实现高效稳定的钙钛矿太阳能电池[J].发光学报,2023,44(02):337-345." } ], "text": "谢怿,吴绍航,高彦艳等.通过氧源调控原子层沉积的SnOx层实现高效稳定的钙钛矿太阳能电池[J].发光学报,2023,44(02):337-345." }, { "data": [ { "name": "text", "data": "XIE Yi,WU Shaohang,GAO Yanyan,et al.Constructing Efficient and Stable Perovskite Solar Cells by Adjusting Atomic-layer-deposited SnO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " Layer " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " Oxygen Sources[J].Chinese Journal of Luminescence,2023,44(02):337-345." } ], "text": "XIE Yi,WU Shaohang,GAO Yanyan,et al.Constructing Efficient and Stable Perovskite Solar Cells by Adjusting Atomic-layer-deposited SnOx Layer via Oxygen Sources[J].Chinese Journal of Luminescence,2023,44(02):337-345." } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金青年项目（62005099）； 广东省基础与应用基础研究基金项目（粤佛联合基金重点项目）（2021B1515120003）" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by Guangdong Basic and Applied Basic Research Foundation（62005099）； Guangdong Basic and Applied Basic Research Fund（Key project of Guangdong‐Foshan Joint Fund）（2021B1515120003）" } ] } ], "history": { "received": "2022-09-06", "revised": "2022-09-26", "ppub": "2023-02-05", "opub": "2023-03-13" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "2", "volume": "44", "originalSource": [] }