数值模拟980 nm锥形半导体激光器输出特性 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "数值模拟980 nm锥形半导体激光器输出特性" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Numerical Simulation on Output Characteristics of 980 nm Tapered Semiconductor Lasers" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "王", "givenname": "芝浩", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Zhi-hao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "王芝浩(1997-)，男，山东潍坊人，硕士研究生，2019年于济南大学获得学士学位，主要从事高功率半导体激光器的研究。E-mail: wangzh_1997@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623169&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623172&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623175&type=" } ], "data": [ [ { "name": "text", "data": "王芝浩" }, { "name": "text", "data": "(1997-)，男，山东潍坊人，硕士研究生，2019年于济南大学获得学士学位，主要从事高功率半导体激光器的研究。E-mail: " }, { "name": "text", "data": "wangzh_1997@163.com" } ] ] } ], "email": "wangzh_1997@163.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "警辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jing-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "帅男", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Shuai-nan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "悦", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Yue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "苏", "givenname": "鹏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SU", "givenname": "Peng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "高", "givenname": "欣", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GAO", "givenname": "Xin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "薄", "givenname": "报学", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BO", "givenname": "Bao-xue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*Corresponding Author, E-mail: bbx@cust.edu.cn", "data": [ { "name": "text", "data": "*Corresponding Author, E-mail: bbx@cust.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "薄报学(1964-)，男，河南淇县人，博士，教授，2002年于吉林大学获得博士学位，主要从事高功率半导体激光器技术与应用的研究。E-mail: bbx@cust.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623178&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623182&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623187&type=" } ], "data": [ [ { "name": "text", "data": "薄报学" }, { "name": "text", "data": "(1964-)，男，河南淇县人，博士，教授，2002年于吉林大学获得博士学位，主要从事高功率半导体激光器技术与应用的研究。E-mail: " }, { "name": "text", "data": "bbx@cust.edu.cn" } ] ] } ], "email": "bbx@cust.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": ". 长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022", "data": [ { "name": "text", "data": ". 长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "具有高功率及高亮度激光特性的锥形半导体激光器在激光加工、自由空间通信、医疗等领域具有广泛的应用前景。本文基于广角差分光束传播法(WA-FD-BPM)，对980 nm锥形半导体激光器进行了仿真模拟，详细分析了不同结构参数(脊形区刻蚀深度、锥形角度、不同脊形区/锥形区长度比、锥形区刻蚀深度、前腔面反射率)对器件光束质量和" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": "特性的影响。分析认为，锥形区波导的几何损耗是导致器件斜率效率降低的主要因素，光泵浦效应是影响锥形激光器光束质量变差的重要因素，可通过降低器件的前腔面反射率来改善光束质量。研究结果可为锥形激光器的性能优化提供参考。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Tapered semiconductor lasers with high power and high brightness characteristics have been extensively used in many fields such as laser processing, free space communications, and medical " }, { "name": "italic", "data": [ { "name": "text", "data": "etc" } ] }, { "name": "text", "data": ". A simulation on 980 nm tapered semiconductor lasers has been done based on the wide-angle differential beam propagation method(WA-FD-BPM) in this work. The effects of structural parameters(such as ridge etching depth, taper angle, different ridge/taper length ratio, taper etching depth, front cavity reflectance) on the beam quality and " }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": " characteristics of the device are analyzed in detail. The analysis shows that the geometric loss of the tapered waveguide is the main factor leading to the decrease of the slope efficiency of the device, and the optical pumping effect is an important factor affecting the deterioration of the beam quality. The beam quality can be improved by reducing the reflectivity of the front cavity surface of the device. The results in this paper can provide a certain theoretical reference for the design and analysis of tapered lasers." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "锥形半导体激光器" } ], [ { "name": "text", "data": "广角差分光束传播法" } ], [ { "name": "text", "data": "光束质量" } ], [ { "name": "text", "data": "光场分布" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "tapered semiconductor laser" } ], [ { "name": "text", "data": "wide-angle differential beam propagation" } ], [ { "name": "text", "data": "beam quality" } ], [ { "name": "text", "data": "optical field distribution" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器由于其结构简单、体积小、重量轻、电光转换效率高、可靠性好、寿命长、激射波长范围广等优势，被广泛应用于军事、空间光通信、信息、工业、生物医学及科学研究等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年来，随着半导体激光器的广泛应用，人们对其输出功率、光束质量等方面也提出了更高的要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，特别是在泵浦固体、光纤激光器时，需要同时具有高功率及高亮度特性的泵浦源。虽然宽条形半导体激光器的输出功率和转换效率不断提高，但随着输出功率的增加，极易产生高阶模，导致输出光束质量变差。为此，研究者提出了一种能够同时兼顾高输出功率及高光束质量的锥形激光器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R7", "R8" ], "text": "7-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且其具有结构简单、制作成本低的优势。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "自美国麻省理工学院(MIT)Walpole等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次研究报道激射波长为980 nm的锥形半导体激光器实现了近衍射极限的光束质量以来，锥形激光器性能不断提升。但锥形激光器实现高亮度、高光束质量的输出仍然受到光丝、自聚焦等非线性效应的限制" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R11", "R12" ], "text": "11-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这主要是由于载流子空间烧孔引起有源区附近的折射率发生变化，发生光场自聚焦现象，导致光束质量变差。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文从器件结构方面对锥形激光器的结构参数进行仿真及数值模拟，包括锥形角度" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": "、脊形区长度" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "、锥形增益区长度" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "、脊形区刻蚀深度" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW_etch" } ] }, { "name": "text", "data": "和锥形增益区刻蚀深度" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Tap_etch" } ] }, { "name": "text", "data": "以及前腔面反射率(AR)，获得其对器件光束特性及输出特性的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "模型理论" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "器件结构模型" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "锥形半导体激光器主要由提供单模光源的脊形波导结构(Ridge waveguide,RW)和对单模光源进行功率放大的锥形增益区(Taper amplification area,Tap)构成，其结构示意图如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "锥形半导体激光器结构示意图(红色部分代表器件InGaAs有源区，黄色部分代表器件AlGaAs波导层、限制层及GaAs盖层，蓝色部分代表器件电流注入区)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagram of tapered semiconductor lasers(the red part represents InGaAs active area, the yellow part represents AlGaAs waveguide layer, confinement layer and GaAs cap layer, and the blue part represents the current injection region)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623191&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623200&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623195&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "仿真基本理论" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "注入量子阱的电流决定了束缚态量子阱内的载流子密度，通过体半导体区域的载流子传输，应用载流子连续性方程、Poisson方程，以自洽的方式对锥形激光器准三维模型进行求解。在有效折射率近似的条件下，利用广角差分光束传播法(WA-FD-BPM)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "进行光场的求解。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.1" } ], "title": [ { "name": "text", "data": "载流子传输" } ], "level": "3", "id": "s2b1" } }, { "name": "p", "data": [ { "name": "text", "data": "激光器内的载流子浓度分布主要基于不同2D截面内的电子和空穴的Poisson方程和连续性方程的自洽求解" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623202&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623206&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623210&type=" } } } ], "id": "DF1" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623214&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623220&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623225&type=" } } } ], "id": "DF2" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623229&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623234&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623241&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "为介电常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "φ" } ] }, { "name": "text", "data": "为电势，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "为电荷量，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "分别为电子浓度和空穴浓度，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623246&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623254&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623250&type=" } } } ] }, { "name": "text", "data": "和" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623259&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623268&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623263&type=" } } } ] }, { "name": "text", "data": "分别为施主和受主杂质的电离浓度，" }, { "name": "italic", "data": [ { "name": "text", "data": "j" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "j" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "为电子和空穴的电流密度，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623272&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623282&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623277&type=" } } } ] }, { "name": "text", "data": "和" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623285&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623296&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623290&type=" } } } ] }, { "name": "text", "data": "分别为量子阱中受限和非受限状态之间的电子和空穴俘获/逃逸率，" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "nr" } ] }, { "name": "text", "data": "和 " }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sp" } ] }, { "name": "text", "data": "分别为非辐射和辐射复合速率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.2" } ], "title": [ { "name": "text", "data": "光学模式" } ], "level": "3", "id": "s2b2" } }, { "name": "p", "data": [ { "name": "text", "data": "对于锥形放大器来说，由于锥形区的有源层面积较宽，模场传播时，其横向分布会随增益饱和程度、温度分布而发生变化。光束传播法(Beam-propagation method,BPM)是分析光波导器件光波传输特性最为广泛的方法之一，其特点是能够应用于复杂的几何模型波导计算，并且考虑了传输模、辐射模以及模式耦合和转换的影响。采用WA-FD-BPM求解传播光场，可有效改善高折射率差和大锥角的折射率导引结构条件下差分光束传播法(FD-BPM)存在的精度差的问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基于Padé近似的广角差分光束传播法是由矢量亥姆霍兹波动方程在弱波导(波导在" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "方向上的折射率变化量极小)近似下，利用缓变包络近似将方程降维处理得到缓变场方程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623298&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623300&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623304&type=" } } } ], "id": "DF4" } }, { "name": "text", "data": "该方程等价于标量Helmholtz方程，其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "k=k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": ")," }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为自由空间波数，" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "=2π/" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "," }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623305&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623311&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623309&type=" } } } ] }, { "name": "text", "data": "为表示场" }, { "name": "italic", "data": [ { "name": "text", "data": "u" } ] }, { "name": "text", "data": "的平均相位变化的常数。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "激光模式在锥形激光器中的传播不同于锥形放大器。在锥形放大器中光束仅沿传播方向单向传播，而在锥形激光器中，需要同时考虑前向和后向传播，即存在两个过程：波导中的模式传输和界面处的模式转换。由此引入传递矩阵" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "text", "data": "，其由传播矩阵和界面矩阵组成。" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623314&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623317&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623321&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "其中" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623323&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623331&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623328&type=" } } } ] }, { "name": "text", "data": "、" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623332&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623339&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623336&type=" } } } ] }, { "name": "text", "data": "分别为入射场的前向波和后向波；" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623342&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623349&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623345&type=" } } } ] }, { "name": "text", "data": "、" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623354&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623360&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623356&type=" } } } ] }, { "name": "text", "data": "分别为出射场的前向波和后向波。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.3" } ], "title": [ { "name": "text", "data": "耦合求解" } ], "level": "3", "id": "s2b3" } }, { "name": "p", "data": [ { "name": "text", "data": "通过载流子、模场方程联立求解进行锥形半导体激光器的特性分析。首先，沿着光传播方向" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": "轴，将其划分为有限个纵向2D切片(垂直" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": "轴)，利用初始光场依次计算后续的光场，并产生新的光子密度分布，获得腔中新的载流子、电势，由此得到横向增益分布和折射率分布。采用Padé近似的WA-FD-BPM方法将前一个切片" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "j" } ] } ] }, { "name": "text", "data": "的光场传播给下一个切片" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "j" } ] }, { "name": "text", "data": "+1" } ] }, { "name": "text", "data": "，以得到下一个切片位置的光子密度分布。经过多次往返、迭代，直至收敛并找到稳定的光场、载流子和电流分布。" } ] } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "模拟结果与分析" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "本文基于如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示的激光器外延结构对器件锥形结构参数进行仿真计算。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "激光器基本外延结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Basic epitaxial structure of laser" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Layer" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Material" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Thickness/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Doping/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "9" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.2" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn, 2.0e19" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "8" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.0" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn, 1.0e18" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "7" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "A" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623363&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623369&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623367&type=" } } } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.5" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn, 1.0e18" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "6" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.01" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.18" } ] }, { "name": "text", "data": "G" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623372&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623378&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623375&type=" } } } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.007" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Undoped" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.01" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "A" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623381&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623386&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623384&type=" } } } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.5" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Si, 1.0e18" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.0" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Si, 1.0e19" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "—" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Sub" } ] } ] ], "foot": [] } ] } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "脊形波导基模条件选择" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "脊形波导是典型的弱折射率导引波导，通过调节侧向的折射率差以达到对光场分布的限制。若要获得近衍射极限的输出光束，须保证脊形波导满足基模工作条件。脊形区宽度为4 μm，得到脊形区刻蚀深度为0.1~0.9 μm变化时的模场分布(均未出现高阶模)如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。从图中可以看出，随着刻蚀深度的增加，波导对光场的限制逐渐增强，逐渐减小了光场的侧向尺寸。较小的近场光斑使得模式的侧向限制因子增强，模式增益提高，从而使得阈值电流逐渐减小。另外，随着刻蚀深度的增加，载流子的侧向扩散也得到更好的限制，使得载流子注入效率更高，同样使得器件的阈值电流减小，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。当刻蚀深度达到一定深度时，随着刻蚀深度的增加，模场分布在垂直方向将向衬底区扩展，使垂直结平面方向的模式限制因子变小，导致阈值电流略有增加。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同脊形波导刻蚀深度的基模模场" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Fundamental mode fields at different ridge waveguide etching depths" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623389&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623396&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623393&type=" } ] } }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "脊形波导激光器阈值电流随脊形波导刻蚀深度的变化特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Threshold current of ridge waveguide lasers with different ridge etching depth" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623398&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623403&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623400&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "另外，由于脊形区与其两侧的等效折射率差随刻蚀深度的增加而增大，脊形波导的基模截止宽度也会变小，在此情况下，器件会随着注入电流的增加，容易因为热透镜效应而产生高阶模，从而严重影响器件的光束质量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "给出了脊形波导内建折射率差与热透镜效应引起的折射率差随脊形波导刻蚀深度的变化关系。从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中可以看出，当脊形刻蚀深度大于0.7 μm时，热透镜效应引起的折射率变化开始小于波导内建折射率的变化。因此，为了获得稳定的基模输出，脊形波导的刻蚀深度应大于0.8 μm。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "脊形波导侧向折射率差、热透镜效应引起折射率差随脊形波导刻蚀深度的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "The lateral refractive index variation by the ridge waveguide and the thermal lens effect with the etching depth of ridge waveguide" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623405&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623409&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623406&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "为脊形波导刻蚀深度为0.8 μm时(其他结构参数同上)，不同脊形区宽度条件对应的模态分布。从图中可以看出，当脊形区宽度大于6 μm时出现高阶模。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同脊形波导宽度对应的模态分布图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "The modal distribution at different ridge waveguide widths" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623410&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623413&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623412&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "不同锥形角度(" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": ")对器件特性的影响" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "为分析锥形增益区锥角对锥形激光器输出功率及输出光束特性的影响，对不同锥角的增益波导结构锥形半导体激光器进行了模拟。脊形波导、锥形增益区长度分别为750 μm和1 250 μm，脊形区刻蚀深度为0.8 μm，有关模拟参数如" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "所示。如无特殊说明，器件前腔面(出光面)和后腔面反射率均分别设定为1%和99%。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "不同锥角锥形激光器的几何参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 2" } ], "title": [ { "name": "text", "data": "Geometric parameters of tapered lasers with different tapered angles" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Taper angle " }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": "/(°)" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/μm" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "69" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "91" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "113" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "6" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "135" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "是注入电流为3 A时，锥形角度分别为3°、4°、5°、6°条件下的远场特性。从图中可以看出，在相同注入电流下，随着锥形角度的增加，远场发散角逐渐增大，旁瓣的相对强度增加；并且当锥角为6°时，远场光斑逐渐出现两个峰，说明当锥角接近或大于基模衍射角时会在锥形区产生高阶模式，使得激光器输出光束质量逐渐降低。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同锥形角度条件下的激光器远场图：(a)3°,(b)4°,(c)5°,(d)6°; (e)不同锥形角度下的慢轴方向远场发散角。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Far-field patterns of the laser at different tapered angles: (a)3°, (b)4°,(c)5°, (d)6°. (e)Far field divergence angles in the slow axis direction at different tapered angles." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623414&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623416&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623415&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "给出了锥形角度分别为3°、4°、5°、6°时锥形激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": "特性。从图中可以看出，高于阈值条件下的锥形器件的输出功率随着注入电流的增加而近似线性增加，器件的斜率效率随着锥形角度的增加而略有减小，阈值电流随着锥形角度的增加而增大。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同锥形角度的激光器" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": "特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": " characteristics of lasers with different taper angles" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623418&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623422&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623420&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "分析可知，随着锥形角度的增加，有源层的有效注入面积相对变大，增加了器件的波导损耗和阈值增益。因此锥形角度较小的器件，其阈值电流较小，斜率效率也较高。而对于锥形角度较大的器件，由于其较大的有效注入面积和输出端面宽度，具有较高的光学灾变损伤(Catastrophic optical damage,COD)阈值，会在一定程度上避免器件COD现象的发生。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "脊形区/锥形区长度比(" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": ")对器件特性的影响" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为分析一定腔长下，脊形区/锥形区长度比" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "对锥形激光器输出光束特性及电光特性的影响，对器件总腔长" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为2 000 μm、锥角为4°、脊形区刻蚀深度为0.8 μm的锥形激光器进行了模拟，有关模拟参数如" }, { "name": "xref", "data": { "text": "表3", "type": "table", "rid": "T3", "data": [ { "name": "text", "data": "表3" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "不同脊形区/锥形区长度比锥形激光器的几何参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 3" } ], "title": [ { "name": "text", "data": "Geometric parameters of tapered lasers with different " }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": " ratios" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Tap" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": " " } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "500" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 500" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1∶3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "108" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": " " } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "750" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 250" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3∶5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "91" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": " " } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1∶1" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "74" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": " " } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1 250" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "750" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "5∶3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "56" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": " " } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "给出了器件注入电流为3 A时，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比分别为1∶3,3∶5,1∶1,5∶3时锥形激光器前腔面(出光面)的近场分布。通过对比可以看出，随着脊形区长度的增加，对于模式的滤波作用增强，能够更加有效地抑制从锥形区反射回来的高阶模场，抑制高阶模的能量。当" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比较小时(" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "=1∶3)，其存在较多的旁瓣，这是因为从锥形增益区放大并向后传播的高阶模在经过较短的脊形区时并没有完全损耗，通过后腔面的反射又重新进入脊形区和锥形区。当" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比较大时，较短的锥形区的电流注入面积较小，将导致光功率密度较大，随着注入电流的增加，更容易引发" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "特性曲线 “扭折”及自聚焦效应，严重影响器件的光束质量，甚至会损坏器件。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "为注入电流400,1 540,3 050 mA时，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比为5∶3的远场分布，可以看出，随着注入电流的增加，远场分布从一个主峰逐渐变化为3个峰。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比锥形激光器的前腔面近场分布" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Near-field distribution of front cavity surface of tapered lasers with different " }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": " ratios" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623424&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623426&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623425&type=" } ] } }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "=5∶3不同注入电流的远场光斑。(a)400 mA;(b)1 540 mA;(c)3 050 mA。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Far-field spot with different injection current at " }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": " =5∶3. (a)400 mA. (b)1 540 mA. (c)3 050 mA." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623427&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623429&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623428&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "锥形激光器阈值增益条件为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(10)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623430&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623431&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623432&type=" } } } ], "id": "DF10" } }, { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "Γ" } ] }, { "name": "text", "data": "为光学限制因子，" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "为阈值增益，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "为器件腔内损耗，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "为腔面损耗，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "geom" } ] }, { "name": "text", "data": "为锥形区几何损耗，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "分别为脊形区和锥形区长度，" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "分别为器件前、后腔面反射率，" }, { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "为脊形区宽度，" }, { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为锥形区输出端宽度。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "给出了不同" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比的锥形激光器" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "特性曲线，" }, { "name": "xref", "data": { "text": "表4", "type": "table", "rid": "T4", "data": [ { "name": "text", "data": "表4" } ] } }, { "name": "text", "data": "给出了不同" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比锥形激光器的阈值电流和斜率效率。模拟表明，随着" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比的增加，激光器阈值电流不断减小，斜率效率逐渐增加。这是因为当激光器的腔长一定时，随着脊形区长度的增加，锥形增益区的长度减小，对应的注入区总面积变小，同时由公式(10)可知锥形区引起的几何损耗也随着降低，使得器件阈值电流减小、斜率效率增加。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "不同" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比锥形激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "P-I" } ] }, { "name": "text", "data": " characteristics of tapered lasers with different " }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": " ratios" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623433&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623437&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623435&type=" } ] } }, { "name": "table", "data": { "id": "T4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表4" } ], "title": [ { "name": "text", "data": "不同脊形区/锥形区长度比锥形激光器的电光参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 4" } ], "title": [ { "name": "text", "data": "Electro-optical parameters of tapered lasers with different " }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "ratios" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Threshold current" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "/mA" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Slope efficiency" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "text", "data": "/(W·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1∶3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "318" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.885" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3∶5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "291" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.903" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1∶1" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "268" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.915" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "5∶3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "207" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.930" } ] } ] ], "foot": [] } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "锥形区刻蚀深度(" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "sub", "data": [ { "name": "text", "data": " Tap_etch" } ] }, { "name": "text", "data": ")对器件特性的影响" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "锥形半导体激光器通常分为增益导引锥形激光器和折射率导引锥形激光器。原理上，折射率导引锥形激光器具有一定的内建折射率波导，可更有效限制光场，因此对锥形区不同刻蚀深度的激光器进行了特性模拟。器件总腔长" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为2 000 μm，脊形区的刻蚀深度为0.8 μm，有关参数如" }, { "name": "xref", "data": { "text": "表5", "type": "table", "rid": "T5", "data": [ { "name": "text", "data": "表5" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表5" } ], "title": [ { "name": "text", "data": "不同锥形区刻蚀深度激光器的几何参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 5" } ], "title": [ { "name": "text", "data": "Geometric parameters of tapered lasers with different etching depth of tapered region" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Tap" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Tapered angle " }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": "/(°)" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Etch depth of tapered region/μm" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "750" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1 250" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "91" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.0~0.8" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "给出了注入电流为3 A时，不同锥形区刻蚀深度激光器的后向光场分布(" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm)和远场分布。从图中可以看出，随着锥形区刻蚀深度的增加，锥形区输入端的后向光场分布逐渐出现更多的旁瓣，远场分布也从一个主峰逐渐变为两个峰。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "不同锥形区刻蚀深度激光器的近场分布" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "Near-field distribution of front cavity surface of tapered lasers with different etching depth of tapered region" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623438&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623442&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623440&type=" } ] } }, { "name": "fig", "data": { "id": "F12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "不同锥形区刻蚀深度的激光器远场光斑。(a)0 μm;(b)0.2 μm;(c)0.4 μm;(d)0.6 μm;(e)0.8 μm。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.12" } ], "title": [ { "name": "text", "data": "Far-field spot of tapered lasers with different etching depth of tapered region. (a)0 μm. (b)0.2 μm. (c)0.4 μm. (d)0.6 μm. (e)0.8 μm." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623444&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623447&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623446&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "出现上述现象的原因可以解释为：光场从锥形区的前腔面向后散射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并经过锥形区的滤波，被限制在脊形波导及其两侧。随着刻蚀深度的增加，与纯增益导引机制的锥形区相比，锥形区波导在侧向上对光场的限制作用逐渐增强，导致锥形区的滤波效果降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，有利于高阶模场的形成。因此，纯增益导引机制的锥形区半导体激光器对于提高器件的光束质量更有优势。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图13", "type": "fig", "rid": "F13", "data": [ { "name": "text", "data": "图13" } ] } }, { "name": "text", "data": "为不同锥形区刻蚀深度激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "特性。从图中可以看出，随着锥形区刻蚀深度的增加，其斜率效率略有增加，纯增益导引机制的锥形区器件的斜率效率为0.903 W/A，锥形区刻蚀深度为0.8 μm时，器件的斜率效率为0.941 W/A。这主要得益于锥形区波导对器件内部光场限制作用的增强，从器件前腔面反射回脊形区的光耗散较小，从而得到较高功率及斜率效率的激光输出。" } ] }, { "name": "fig", "data": { "id": "F13", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图13" } ], "title": [ { "name": "text", "data": "不同锥形区刻蚀深度激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I" } ] }, { "name": "text", "data": "特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.13" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "P-I" } ] }, { "name": "text", "data": " characteristics of tapered lasers with different etching depth of tapered region" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623449&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623452&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623451&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.5" } ], "title": [ { "name": "text", "data": "注入电流(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": ")及前腔面反射率(AR)对激光器光束特性的影响" } ], "level": "2", "id": "s3e" } }, { "name": "p", "data": [ { "name": "text", "data": "为分析注入电流对锥形激光器光束特性的影响，" }, { "name": "xref", "data": { "text": "图14", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14" } ] } }, { "name": "text", "data": "给出了器件分别在" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "=360 mA(黑实线)、5 460 mA(红线)条件下锥形区(" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=1 350 μm)和锥形区输入端(" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm)的后向和前向光场分布。从图中可以看出，当注入电流增加时，腔内具有较高的光子密度，光场通过前腔面反射向后传播时具有较高的增益，使得光场强度提升，腔内产生更高强度的光丝，如" }, { "name": "xref", "data": { "text": "图14(a)", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14(a)" } ] } }, { "name": "text", "data": "所示。虽然脊形波导两侧为非电泵浦区域，可以增加高阶模的损耗，但在注入电流升高后，侧瓣的强度也明显升高，如" }, { "name": "xref", "data": { "text": "图14(b)、(c)", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14(b)、(c)" } ] } }, { "name": "text", "data": "所示；光场向前传播并在锥形区获得增益后，激励更多的侧瓣产生，且其强度仅次于中心波瓣强度，导致输出光束质量变差。" } ] }, { "name": "fig", "data": { "id": "F14", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图14" } ], "title": [ { "name": "text", "data": "不同位置后向光场分布：(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=1 350 μm,(b)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm；不同位置前向光场分布：(c)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm,(d)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=1 350 μm。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.14" } ], "title": [ { "name": "text", "data": "The backward field distribution: (a)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=1 350 μm, (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm. The forward field distribution: (c)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm, (d)" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=1 350 μm." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623453&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623455&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623454&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过上述分析，在高注入电流条件下光束经过在腔内往返传播，可激励产生更多的光丝，形成多模激射，影响器件的输出光束质量。由此可知，这种光泵浦效应是影响锥形激光器光束质量的主要因素。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "另外，前腔面反射率对于光束在腔内往返传播形成的光丝效应也有着明显影响。" }, { "name": "xref", "data": { "text": "图15", "type": "fig", "rid": "F15", "data": [ { "name": "text", "data": "图15" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "16", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "给出了不同前腔面反射率在" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm、" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=2 000 μm处的前向光场分布和远场分布。可以看出，在较低的前腔面反射率条件下，激光器的旁瓣强度及数量明显下降，并且对应的远场光斑数量减少，明显提高了器件的光束质量。" } ] }, { "name": "fig", "data": { "id": "F15", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图15" } ], "title": [ { "name": "text", "data": "不同前腔面反射率条件下" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm(a)、" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=2 000 μm(b)处的前向光场分布。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.15" } ], "title": [ { "name": "text", "data": "The forward light field distribution at " }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=750 μm(a) and " }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "=2 000 μm(b) under different reflectance of front cavity surface" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623456&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623458&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623457&type=" } ] } }, { "name": "fig", "data": { "id": "F16", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图16" } ], "title": [ { "name": "text", "data": "不同前腔面反射率的激光器远场光斑。(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=5%;(b)" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=3%;(c)" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=1%。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.16" } ], "title": [ { "name": "text", "data": "Far-field spot with different front cavity reflectivity. (a)" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=5%. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=3%. (c)" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=1%." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623459&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623461&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623460&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文主要对锥形半导体激光器的输出特性进行了模拟分析。通过对多种不同锥角结构的器件模拟得出，随着锥角的增大，斜率效率降低、阈值电流变大，光束质量逐渐变差。分析认为，锥形区波导的几何损耗是导致器件斜率效率降低的主要因素。同时，器件的脊形区/锥形区长度比也对激光器的光束质量具有明显的影响，随着" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比的增加，波导对高阶模式的空间滤波更加充分，但器件的最大输出功率会受到限制。本文给出了不同" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RW" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Taper" } ] }, { "name": "text", "data": "比器件前腔面的光场分布，可更加直观地观察器件特性的变化。同时，折射率导引机制锥形激光器由于在侧向上对光场的限制较强，光场在腔内传播时会更容易形成旁瓣，引发高阶模的产生。模拟表明，光泵浦效应是影响锥形激光器光束质量变差的重要因素，可通过降低器件的前腔面反射率获得明显改善。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210376." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "陈良惠" }, { "name": "text", "data": ", " }, { "name": "text", "data": "杨国文" }, { "name": "text", "data": ", " }, { "name": "text", "data": "刘育衔" }, { "name": "text", "data": ". 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" }, { "name": "text", "data": "(in Chinese)" } ], "title": "Influence of guided wave mode on output characteristics of tapered diode laser" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20210376", "clc": [ [ { "name": "text", "data": "TN248.4" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2022)02-0275-10", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（61774024）；吉林省科技发展计划（20190302007GX，20200501008GS）资助项目" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China (61774024); Science and Technology Development Plan of Jilin Province (20190302007GX, 20200501008GS)" } ] } ], "history": { "received": "2021-11-26", "revised": "2021-12-19", "opub": "2022-02-24" }, "copyright": { "data": [], "year": "2022" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "02", "volume": "43", "originalSource": [] }