利用离子激发发光研究低温条件下ZnO发光行为 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "利用离子激发发光研究低温条件下ZnO发光行为" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "赵", "givenname": "国强", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Guo-qiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "赵国强(1996-)，男，辽宁葫芦岛人，博士研究生，2019年于成都理工大学获得学士学位，主要从事半导体材料离子激发发光与材料辐照效应的研究。E-mail: 202131220022@mail.bnu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623026&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623030&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623032&type=" } ], "data": [ [ { "name": "text", "data": "赵国强" }, { "name": "text", "data": "(1996-)，男，辽宁葫芦岛人，博士研究生，2019年于成都理工大学获得学士学位，主要从事半导体材料离子激发发光与材料辐照效应的研究。E-mail: " }, { "name": "text", "data": "202131220022@mail.bnu.edu.cn" } ] ] } ], "email": "202131220022@mail.bnu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "金福", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Jin-fu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "广甫", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Guang-fu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*Corresponding Authors, E-mail: 88088@bnu.edu.cn;", "data": [ { "name": "text", "data": "*Corresponding Authors, E-mail: 88088@bnu.edu.cn;" } ] } ], "bio": [ { "lang": "zh", "text": [ "王广甫(1964-)，男，河北邢台人，博士，教授级高工，1999年于北京师范大学获得博士学位，主要从事离子束分析技术及应用和MeV离子注入应用的研究。E-mail: 88088@bnu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623038&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623043&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623050&type=" } ], "data": [ [ { "name": "text", "data": "王广甫" }, { "name": "text", "data": "(1964-)，男，河北邢台人，博士，教授级高工，1999年于北京师范大学获得博士学位，主要从事离子束分析技术及应用和MeV离子注入应用的研究。E-mail: " }, { "name": "text", "data": "88088@bnu.edu.cn" } ] ] } ], "email": "88088@bnu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "仇", "givenname": "猛淋", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "QIU", "givenname": "Meng-lin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "*11112020052@bnu.edu.cn", "data": [ { "name": "text", "data": "*11112020052@bnu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "仇猛淋(1991-)，男，江苏盐城人，博士，讲师，2018年于北京师范大学获得博士学位，主要从事离子辐照及离子束分析的研究。E-mail: 11112020052@bnu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623055&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623060&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623064&type=" } ], "data": [ [ { "name": "text", "data": "仇猛淋" }, { "name": "text", "data": "(1991-)，男，江苏盐城人，博士，讲师，2018年于北京师范大学获得博士学位，主要从事离子辐照及离子束分析的研究。E-mail: " }, { "name": "text", "data": "11112020052@bnu.edu.cn" } ] ] } ], "email": "11112020052@bnu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "庭顺", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Ting-shun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "华", "givenname": "青松", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HUA", "givenname": "Qing-song", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "北京师范大学核科学与技术学院　射线束教育部重点实验室，北京　100875", "data": [ { "name": "text", "data": "北京师范大学核科学与技术学院　射线束教育部重点实验室，北京　100875" } ] }, { "lang": "en", "label": "1", "text": "Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China", "data": [ { "name": "text", "data": "Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "北京市辐射中心，北京　100875", "data": [ { "name": "text", "data": "北京市辐射中心，北京　100875" } ] }, { "lang": "en", "label": "2", "text": "Beijing Radiation Center, Beijing 100875, China", "data": [ { "name": "text", "data": "Beijing Radiation Center, Beijing 100875, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "离子激发发光(Ions beam induced luminescence,IBIL)可以实时原位分析不同温度、不同离子辐照条件下材料内部点缺陷的演变行为。本文利用2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "研究了300,200,100 K温度下ZnO单晶内部点缺陷发光及其随注量的演变行为。实验中发现ZnO深能级发射和近带边发射，结合Voigt分峰与XPS实验结果，确定红光(1.75 eV)与V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "相关，橙红光(1.95 eV)来自Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "跃迁；对于与V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "相关的绿光(2.10 eV)，其红移可能由于温度降低导致更多电子由导带释放到Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "。峰中心位于3.10 eV和3.20 eV近带边发射分别来自于Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到价带的跃迁和激子复合，红移原因分别为Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "附近局域化能级和带隙收缩。利用单指数公式对发光强度进行拟合，获得的衰减速率常数(" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": ")可以表征缺陷的辐射硬度，对比发现深能级发射峰在200 K时辐射硬度最大，而近带边发射峰在300 K时辐射硬度最大。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Ions beam induced luminescence(IBIL) can be used to analyze the evolution of defects under different temperatures and different ion irradiation conditions in real-time " }, { "name": "italic", "data": [ { "name": "text", "data": "in situ." } ] }, { "name": "text", "data": " In this paper, the evolution of luminescence of point defects with fluence inside ZnO single crystals at 300,200, 100 K was analyzed using 2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ". The deep-band emission and near-band emission of ZnO were observed in the experiments, and combined with the Voigt splitting results, it was determined that the origin of red emission(1.75 eV) was V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": ", and the orange-red emission(1.95 eV) was associated with the transitions from the conduction band to O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": ". While for the green emission(2.10 eV) that redshifts with decreasing temperature, it was mainly related to V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": ". The reason of redshift was that more electrons from conduction band were released to Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": ". For the near-band emission, 3.10 eV and 3.20 eV emission mainly associated with the transitions from Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": " to the valence band and recombination of excitons, and the redshifts were mainly due to the localization energy level of Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": " and the temperature-induced band-gap shrinkage. Using the single exponential formula to fit the decay of the luminescence intensity with fluence, the decay rate costant(" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": ") was used to characterize the irradiation hardness of the defects. It was found that all three peaks of the deep-band emission were the maximum irradiation hardness at 200 K, while for the two peaks of the near-band emission, they had the maximum irradiation hardness at 300 K. This may be due to the fact that during the temperature increase, a large number of electron holes obtained enough thermal kinetic energy to be released from the originally bound by the point defect, coupled with the temperature-induced band-gap shrinkage, the dual effect made the radiation recombination inside the crystal enhanced, and thus the irradiation resistance was enhanced." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "离子激发发光" } ], [ { "name": "text", "data": "温度" } ], [ { "name": "text", "data": "点缺陷" } ], [ { "name": "text", "data": "ZnO" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "ion-beam-induced luminescence" } ], [ { "name": "text", "data": "temperature" } ], [ { "name": "text", "data": "point defects" } ], [ { "name": "text", "data": "ZnO" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "ZnO作为第三代半导体材料，具有优越的物理化学性质：宽禁带(3.37 eV)、较高的激子束缚能(60 meV)和光激发效率。优异的光电性能和压电性能使其在光电器件以及太阳能电池等领域得到了广泛应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些优越的性质以及广泛的应用使得ZnO的发光行为备受关注。ZnO在自然生长的过程中会不可避免地引入一些本征点缺陷如氧空位(V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": ")、锌空位(V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": ")、氧间隙(O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": ")、锌间隙(Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": ")等，这些点缺陷会直接或者间接地影响其发光行为以及结构等特性，从而对ZnO光电器件的发光性能产生一定的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R2", "R3", "R4", "R5" ], "text": "2-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，不同温度以及不同辐照条件对ZnO内部的点缺陷种类及其演变都会产生不同的作用，进而必然会对其发光特性产生影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。离子激发发光(Ions beam induced luminescence,IBIL)作为一种离子束分析技术，可以作为离子辐照损伤实时原位监测方法，同时实现在离子辐照过程中对绝缘材料和半导体中杂质和结构变化进行实时原位监测，进而探究辐照和温度变化过程中点缺陷的演变情况" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与先辐照后表征的传统分析方法(光致发光(PL)、阴极发光(CL)和热释光(TL)等)相比，离子激发发光具有在辐照过程中实时原位测量的优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "现阶段，虽然对ZnO发光特性的研究已经趋于成熟，但制备方法的多样性、对表面状态的敏感性和实验条件等原因造成的发射光谱不同，使其精确的发射中心和发光机理仍存在争议，甚至一些实验结果很难与理论计算得到的本征缺陷能级匹配" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，大部分对于ZnO发光特性的研究主要集中在室温或高温条件下。Purbayanto等研究了室温下ZnO纳米材料的PL光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",Cabral等将理论与实验相结合利用PL研究了氧化锌内缺陷的光学行为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",Kumawat等研究了氧化锌内部点缺陷发光的温度依赖性(-10~27 ℃)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，王亚芳研究了X射线辐照低温条件下ZnO热释光光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但低温辐照过程中对发光行为的实时原位监测尚未见报道。因此，在辐照条件下对ZnO晶体本征缺陷的演变还需做进一步研究。本文利用IBIL光谱分析技术，实现了在2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "辐照作用下，100,200,300 K不同温度时的ZnO单晶发射光谱的实时原位测量，并对其内部本征点缺陷随注量以及温度的演变进行了分析。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本实验中使用的样品为合肥科晶材料科技有限公司生产的单晶ZnO(10 mm×10 mm×0.45 mm，晶向 " }, { "name": "text", "data": "<" }, { "name": "text", "data": "0001" }, { "name": "text", "data": ">" }, { "name": "text", "data": "，双面抛光)。IBIL分析测试系统建立在北京师范大学GIC4117 2×1.7 MV串列加速器上" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，实验装置见文献[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］。在测量过程中，离子激发产生的光信号通过光纤传输，由海洋光学QE-Pro光谱仪接收和储存，每个光谱的积分时间为0.5 s。实验过程中样品温度控制由从Instec公司定制的温度控制台完成，其使用液氮以及加热模块可实现100~873 K范围内的精确温度控制；加热模块和液氮回路的流量由计算机软件控制，温度的控制精度为±1 K。实验选用的是2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "束，束斑直径为6.7 mm，束流大小为10 nA，离子通量为1.773×10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。实验选取的温度点分别为100,200,300 K。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "实验结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "在100,200,300 K三种不同温度下分别利用2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "束对单晶ZnO样品进行激发，并实时收集不同温度下的IBIL光谱。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示为3个不同温度点的IBIL光谱随注量演变图，从图中可以明显观察到其IBIL光谱由两个主要的发射带构成，其中较宽发射带为可见光发光带，又可以称为深能级发射带(Deep-band-emission,DBE)，主要是由于晶体内部本征点缺陷或杂质作为辐射复合中心所致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，发光中心和强度也受缺陷种类和浓度影响；另一个较窄的为UV发射带，也叫近带边发射带(Near-band-emission,NBE)，主要受激子复合影响，通常情况下，晶体缺陷越少，晶体越完美，近带边发射强度越高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示，随着注量的增加，无论是DBE还是NBE峰，其发光强度都在逐渐衰减，并且衰减速率逐渐降低。出现这种现象的原因可能是入射离子损伤造成缺陷发光猝灭以及缺陷迁移速率降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，也可能是由于注入的H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "与O的自由基形成O—H，或者与锌空位形成V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "—H，从而抑制了发光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，100 K时的发光强度与300 K相比，有明显的增强，但与200 K时的发光强度相比，发光强度却无明显变化，后面我们会对DBE和NBE宽峰进行分峰处理，进一步细化讨论。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "辐照作用下ZnO的IBIL光谱随注量的演变。(a)100 K;(b)200 K;(c)300K。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Evolution of IBIL spectra of ZnO under 2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " bombardment with fluence at 100 K(a), 200 K(b), 300 K(c)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623069&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623077&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623073&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过IBIL分析装置采集到的是不同注量下的光谱，而为了进一步分析DBE峰与NBE峰的详细信息，就需要把光谱转换成能谱之后进行分峰处理。而现在大家普遍使用的是高斯分峰，这主要是由于人们普遍认为能级之间的跃迁分布属于高斯分布。但Lenz等认为在只有自然展宽存在的理想情况下(完美晶体，无晶格相互作用，实验温度在0 K，无振动耦合等)，晶体的发射与吸收光谱属于洛伦兹线型" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但在实验中却存在着多种展宽机制，除上述由于激发态电子振幅随机变化而导致的谱线自然状态下的均匀展宽(洛伦兹分布)外，还有半导体中存在的缺陷、应力、非故意掺杂引入的杂质对其周围的原子产生扰动导致的跃迁频率具有一定分布范围而造成的非均匀展宽(高斯线型)，更有固体中电子散射声子引起辐射电磁波相位变化的失相过程(洛伦兹线型)，功率展宽(高斯分布)以及实验因素展宽(高斯或洛伦兹分布，需具体讨论)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。所以，实验中的展宽是多种展宽机制相互作用的结果，因此我们选用Voigt线型即洛伦兹线型与高斯线型的卷积形式进行分峰处理" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了更加清楚地分析温度对ZnO发光的影响，我们选择对比同一注量下不同温度时ZnO的IBIL光谱，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "为不同温度下ZnO的整体发射光谱，可以明显观察到300 K时DBE发光强度明显低于100 K和200 K时的发光强度；" }, { "name": "xref", "data": { "text": "图2(b)、(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)、(c)" } ] } }, { "name": "text", "data": "分别为DBE和NBE归一化光谱。从" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "中可以看出，100 K时DBE峰位较200 K相比，无明显移动，但与300 K时相比，却有明显变化；对于" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": "中的NBE峰位，温度降低其峰位发生蓝移。下文我们会进一步讨论DBE与NBE峰位产生移动的原因与起源。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "在1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "辐照作用下不同温度的光谱(a)、DBE归一化光谱(b)、NBE归一化光谱(c)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Spectra(a), normalized spectra of DBE(b), normalized spectra of NBE(c) at different temperatures with H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " irradiation of 1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623083&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623089&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623087&type=" } ] } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "DBE演变" } ], "level": "2", "id": "s3a" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1.1" } ], "title": [ { "name": "text", "data": "DBE峰位随注量演变与起源" } ], "level": "3", "id": "s3a1" } }, { "name": "p", "data": [ { "name": "text", "data": "温度为200 K时，注量为3.73×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ",2 MeV H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "辐照作用下氧化锌IBIL能谱Voigt分峰结果如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图3(a)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)" } ] } }, { "name": "text", "data": "是DBE分峰示意图，图中DBE峰分为3个子峰，峰中心分别位于1.75 eV(红光)、1.95 eV(橙红光)和2.10 eV(绿光)。" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "是NBE分峰示意图，图中NBE峰分为两个子峰，峰中心分别位于3.14 eV和3.24 eV，由于这两个峰中心在不同温度下会有所不同，所以不宜用峰中心位置来命名，暂且将其两个峰用UV 1和UV 2表示。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "显示了在100,200,300 K时DBE各个峰位随注量的演变，从图中可以明显观察到氧化锌DBE峰峰位在100 K与200 K时无明显移动，但300 K时峰位明显与100 K和200 K不同，其中1.75 eV与1.95 eV对应的红光和橙红光无明显变化，只有绿光从100 K时的2.10 eV移动到300 K时的2.30 eV。这也与前面" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "不同温度下归一化光谱中的峰位移动趋势相同，表明温度为300 K时DBE峰相对于100 K和200 K时的蓝移主要是由于在高能侧子峰位从2.10 eV蓝移到2.30 eV。此外，在" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中可以明显观察到，随着注量的增大，3个峰的峰位无明显移动。这说明注量的改变并不能对其峰位产生影响，而造成峰位移动的直接原因是温度的变化，温度从200 K升高到300 K，绿光发射带明显蓝移。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示为DBE各个发光中心在不同温度下的半高宽随注量的演变，可以明显观察到，100 K和200 K时3个子峰的半高宽值随注量是稳定的，无明显波动；但在300 K时半高宽波动较大，但无明显移动，这主要是由于室温下发光强度相对较弱导致光谱统计涨落较大，从而造成发光峰的半高宽波动较大，并不是有新的发光中心出现所致。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "在200 K 3.73×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "辐照时，DBE峰(a)和NBE峰(b)的IBIL能谱Voigt分峰结果。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Voigt decomposition of IBIL energy spectral of DBE peak(a) and NBE peak(b) at 200 K under H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " irradiation of 3.73×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623091&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623095&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623092&type=" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "100 K(a)、200 K(b)、300 K(c)时ZnO的DBE峰位随注量的演变。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Evolution of the peak position of the DBE peak of ZnO with fluence at 100 K(a), 200 K(b), 300 K(c)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623097&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623102&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623100&type=" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "100 K(a)、200 K(b)、300 K(c)时ZnO的DBE峰半高宽随注量的演变。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Evolution of the FWHM of the DBE peak of ZnO with fluence at 100 K(a), 200 K(b), 300 K(c)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623104&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623106&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623105&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在氧化锌的DBE峰中，红光和绿光作为其重要的组成部分以及在LED发光二极管中的重要应用使得二者极大地吸引了人们的关注。现阶段对于氧化锌红光的研究主要集中在通过不同激发方式以及与理论计算相结合等来探究其发光的起源，同时也有研究者因为红光可以作为N掺杂的P型ZnO的特征发射从而对红光进行了深入研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然而在众多的研究文献中却很难找到大家公认的发光起源。对于绿光的起源，大家普遍认为其主要来源于V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R3", "R4", "R5", "R6", "R7", "R8", "R9", "R10", "R11", "R12", "R13", "R14", "R15", "R16", "R17", "R18", "R19", "R20", "R21", "R22", "R23", "R24", "R25", "R26", "R27", "R28", "R29", "R30" ], "text": "3-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "即使没有掺杂的氧化锌单晶在生长的过程中也会不可避免地引入一些本征点缺陷；理论上V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "与Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "形成能较低，很容易在晶体生长过程中形成" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "与Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "在ZnO内部浓度较高。同时，本研究中采用2 MeV质子束辐照，实验也表明在MeV质子辐照作用下会产生高浓度的Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "与V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示为辐照前后ZnO样品O 1s的XPS光谱，我们利用高斯解谱得到3个子峰，分别是峰中心位于530.40 eV的O 1s A、531.26 eV的O 1s B和532.29 eV的O 1s C。O 1s A主要来自于ZnO晶格内本征的Zn—O键，O 1s B则与O" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "缺O态相关，主要与V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "相关，O 1s C则主要与O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "相关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "为辐照前后氧化锌样品O 1s A、O 1s B和O 1s C峰面积相对强度占比，即使是没有经历过辐照的样品，其晶体内部仍然存在V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "和O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "。辐照前O 1s A占比明显高于辐照后，也证明了辐照过程会破坏Zn—O键，使晶格原子离位；辐照后O 1s B和O 1s C相对强度占比明显高于辐照前，说明辐照后无论是V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "还是O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "都有所增加，也证实了离子束的辐照会在ZnO晶体内部产生V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "与O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示为辐照前后ZnO中Zn的XPS归一化光谱，其中辐照前Zn 2p" }, { "name": "sub", "data": [ { "name": "text", "data": "3/2" } ] }, { "name": "text", "data": "和Zn 2p" }, { "name": "sub", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "分别位于1 021.50 eV和1 044.60 eV，但辐照后峰位有轻微的移动，这可能是由于Zn与入射的H形成Zn—H，因为Zn—H键能比Zn—O更高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "辐照前(a)和辐照(10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")后(b)ZnO单晶O 1s的XPS光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "XPS O 1s spectra of ZnO single crystal before(a) and after irradiation(10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623107&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623109&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623108&type=" } ] } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "辐照(10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")前后ZnO单晶Zn 2p的XPS归一化光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Normalized XPS Zn 2p spectra of ZnO single crystal before and after irradiation(10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623110&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623112&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623111&type=" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "辐照前后ZnO单晶的O 1s A、O 1s B和O 1s C峰面积相对强度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "The relative intensity of O 1s A, O 1s B and O 1s C peak areas of ZnO single crystal before and after irradiation" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": " " } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "辐照前/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "辐照后/%" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "O 1s A" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "67.09" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "30.44" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "O 1s B" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "15.64" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "28.80" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "O 1s C" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "17.27" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "41.75" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对于红光的起源仍然存在争议，比如Djuri等通过光致发光(PL)对不同温度下的ZnO发光光谱分析得出红光主要与V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "相关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";Knutsen等通过退火、PL和正电子湮没光谱等手段对电子辐照的ZnO样品进行研究，并提供了更多1.80 eV发射与V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "联系起来的更直接的证据" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，本实验室的Zheng等利用IBIL分析技术同样在ZnO单晶中观察到1.75 eV的红光，并认为其来自于V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在本研究中无论是样品还是发光中心的位置，均与Zheng等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的研究具有相同之处，更倾向于红光的发射来自于V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "，涉及的跃迁主要来自于与锌空位相关的深受主与浅施主" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "氧化锌发光机理示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Schematic diagram mechanism of ZnO luminescence" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623113&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623115&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623114&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对于氧化锌发射光谱中的橙红光(1.95 eV)，已经有研究人员报道了相关的发光起源。Gomi等观察到ZnO的红光发射，而且证明了这一发射带与间隙锌引起的晶格膨胀和晶格无序有关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Ahn等通过在ZnO生长过程中调整氧含量并用PL证明了1.95 eV发射峰来自于O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，IBIL光谱中观察到的橙红光发射能量与理论计算得到的从Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "能级跃迁发射的能量相同" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且在O 1s的XPS光谱中也证明了O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "的存在，因此对于峰中心位于1.95 eV的橙红光，有理由认为其来自于Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "跃迁，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在氧化锌DBE峰中，绿光被广大研究者报道最多" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R25", "R26", "R27", "R28", "R29", "R30" ], "text": "25-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",Luo等在室温下的PL光谱中观察到2.1 eV和2.4 eV发射带，分别归因于O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "和V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";Cui等利用X射线激发发光观察到ZnO的2.1 eV绿色发射带，并且认为与V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "相关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；理论计算也表明电子空穴对在V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "发生辐射复合是绿光发射的起源" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } } ], "rid": [ "R38", "R39", "R40" ], "text": "38-40", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是由于制备方法的多样性以及表面态的影响，准确的发光机制仍然存在争议。本实验中观察到的绿光峰位的蓝移与Cao等利用光致发光在实验中观察到的ZnO可见光峰位的蓝移实验现象相同" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且O 1s的XPS光谱证明了V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "的存在，同时" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中数据也说明了辐照过程会产生一定量的V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "。因此，我们认为绿光发射是两部分跃迁的叠加：一部分来自于导带到V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "跃迁(2.30 eV)，另一部分来自于Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "跃迁(2.10 eV)。室温下，在MeV质子轰击作用下，大量的电子被激发到导带，因此导带到V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "跃迁占主导地位，峰位在2.30 eV；当温度降低，更多的电子被释放到与导带邻近的更低能级的Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "，接着与被V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "俘获的空穴发生辐射重组，从而造成绿光发射的红移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1.2" } ], "title": [ { "name": "text", "data": "DBE峰辐射硬度" } ], "level": "3", "id": "s3a2" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图9(a)、(b)、(c)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(a)、(b)、(c)" } ] } }, { "name": "text", "data": "分别为峰中心位于1.75,1.95,2.10 eV 3个发光中心的强度在不同温度下随注量的演变情况及单指数拟合结果，可以明显观察到发光中心的强度均随注量呈单一下降趋势。发光强度的衰减是由于MeV离子束入射造成的晶格损伤以及离子入射造成大量缺陷的形成，进而导致缺陷对电子和空穴的俘获作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而造成发光强度的衰减。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "中实线是使用单指数公式对3个发光中心强度随注量的演变进行拟合的结果" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623116&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623117&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623118&type=" } } } ], "id": "DF1" } }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "是发光强度，" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "是注量，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "是拟合常数。" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "是衰减速率常数，它代表发光中心对辐照损伤的抵抗能力，即通常用它来表示发光中心的辐射硬度。" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值越大，代表发光强度衰减速率越慢，意味着对应的发光中心有更好的稳定性和更大的辐射硬度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "列出了不同温度下的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "75" } ] }, { "name": "text", "data": "代表1.75 eV发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "95" } ] }, { "name": "text", "data": "代表1.95 eV发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "10" } ] }, { "name": "text", "data": "代表2.10 eV发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值。从表中数据可以看出，3个发光中心的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值同时在200 K时最大，说明发光中心的辐射硬度在200 K时最大，其次为100 K，在300 K 时其抗辐照性能最弱。温度越高，缺陷迁移率越高，自由载流子寿命越短，因此发光中心的猝灭速率越快" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，在200 K时出现的辐射硬度最大可能是由于在150 K附近存在一个相变。Cui等发现ZnO的" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623119&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623123&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623121&type=" } } } ] }, { "name": "text", "data": "在150 K时会转变为V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "，由150 K向两侧衰减，进而导致200 K抗辐照性能强于100 K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；也可能是由于在200 K附近存在一个由于热电离和光激发共同作用导致载流子显著增强而造成的由金属相到绝缘相的转变" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，进而导致200 K辐射硬度最大。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "1.75 eV(a)、1.95 eV(b)、2.10 eV(c)峰位在3个不同温度下随注量的演变。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "The evolution of the 1.75 eV peak(a), 1.95 eV peak(b), 2.10 eV peak(c) with fluence at three different temperatures." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623125&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623128&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623127&type=" } ] } }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "使用公式(1)对图9中3个不同发光中心随注量演变拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "75" } ] }, { "name": "text", "data": "代表对1.75 eV发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "95" } ] }, { "name": "text", "data": "代表对1.95 eV发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "10" } ] }, { "name": "text", "data": "代表对2.10 eV发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 2" } ], "title": [ { "name": "text", "data": "The " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": " obtained by fitting three different luminescence centers in Fig.9 using Eq.(1) with the evolution of fluence, with " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "75" } ] }, { "name": "text", "data": " belonging to the 1.75 eV peak, " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "95" } ] }, { "name": "text", "data": " belonging to the 1.95 eV peak and " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "10" } ] }, { "name": "text", "data": " belonging to the 2.10 eV peak" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "/K" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1.75" } ] }, { "name": "text", "data": "/(10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1.95" } ] }, { "name": "text", "data": "/(10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2.1" } ] }, { "name": "text", "data": "/(10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "100" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3.18" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2.31" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2.73" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4.48" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5.46" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4.56" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "300" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.86" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.13" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.52" } ] } ] ], "foot": [] } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "NBE演变" } ], "level": "2", "id": "s3b" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2.1" } ], "title": [ { "name": "text", "data": "NBE峰位随注量演变与起源" } ], "level": "3", "id": "s3b1" } }, { "name": "p", "data": [ { "name": "text", "data": "近带边发射(NBE)是ZnO固有的，即使在没有缺陷的样品中也能清楚地观察到；此外，它还携带了激子复合和缺陷结构相关的信息" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，对于ZnO近带边发射的研究较多，但大家对于近带边发射的起源观点却近乎一致，普遍认为其主要来自于激子的复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } } ], "rid": [ "R43", "R44", "R45", "R46" ], "text": "43-46", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。温度会对激子辐射复合机制产生一定影响，紫外光发射的温度依赖性也因此受到重视。Cui和Cao等分别利用X射线激发发光和光致发光，均在ZnO变温光谱中观察到紫外光的红移，并均将其归因于温度诱发的带隙收缩" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在不同温度下测量得到的随注量变化的NBE能谱同样需进行Voigt分峰处理，得到不同温度下UV 1和UV 2峰位和半高宽随注量演变情况，分别见" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "。从" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "中可以观察到，两个子峰在温度升高同时都在发生红移。对于ZnO的紫外发射UV 2而言，峰位由100 K时的3.30 eV红移到300 K时的3.18 eV，我们认为这种紫外发射同样起源于ZnO内部激子的复合。而对于它的红移，主要是由于温度诱发的带隙收缩，而且对实验中不同温度下峰位使用Varshni公式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "进行拟合后得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "(0)(温度为0 K时的带隙能)为3.35 eV，属于带间跃迁。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "100 K(a)、200 K(b)、300 K(c)时ZnO的NBE峰峰位随注量的演变。红色与绿色实线分别代表100 K温度时UV 1和UV 2实验数据点的拟合曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "Evolution of the peak position of the NBE peak of ZnO with fluence at 100 K(a), 200 K(b), 300 K(c). The red and green solid lines represent the fitting curves of UV 1 and UV 2 experimental data points at 100 K." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623129&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623132&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623130&type=" } ] } }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "100 K(a)、200 K(b)、300 K(c)时ZnO的NBE峰半高宽随注量的演变。红色与绿色实线分别代表100 K温度时UV 1和UV 2实验数据点的拟合曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "Evolution of the FWHM of the NBE peak of ZnO with fluence at 100 K(a), 200 K(b), 300 K(c). The red and green solid lines represent the fitting curves of UV 1 and UV 2 experimental data points at 100 K." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623133&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623139&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623135&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对于室温下峰中心位于3.10 eV的UV 1而言，其峰位移动无法用Varshni公式进行拟合，因此无法归结于单一的温度诱发的带隙收缩。而且根据全势垒muffin-tin轨道法计算得出从Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到价带跃迁的能量为3.10 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，我们认为ZnO的3.10 eV发射主要与Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "相关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而这种红移主要是Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "的局域化能级引起的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } } ], "rid": [ "R48", "R49" ], "text": "48-49", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于质子束的轰击，造成晶体内部产生大量点缺陷，这些点缺陷会不可避免地在间隙原子中心附近引起晶格畸变，而这些晶格畸变就会在间隙锌周围造成载流子的局域化效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这与半导体合金中无序化引起的势能涨落非常相似" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，Cao等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用光致发光研究发现了ZnO紫光发射峰位呈现出“S”移动，即在Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "附近形成的载流子局域化效应与温度诱发的带隙收缩竞争的结果，且UV 1从100 K到200 K峰位红移的能量明显大于200 K 到300 K红移能量。在100~300 K这一温度段内Varshni公式近似于线性变化，这表明UV 1的红移不属于单一带隙收缩的作用结果，而是在带隙收缩的基础上叠加了其他的机制，最有可能的就是由于大量的质子轰击出现的大量点缺陷，从而导致的载流子局域化效应，使得这种ZnO的紫光峰位移动机制导致出现我们实验中" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "所示的不同温度下的峰位移动现象。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了更加准确地分析NBE峰位以及半高宽随注量的演变，我们对" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "中UV 1和UV 2实验数据点进行拟合，除了200 K时的UV 1之外其余拟合得到的均是一条平行于" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "轴的直线。" }, { "name": "xref", "data": { "text": "图10(a)", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10(a)" } ] } }, { "name": "text", "data": "直线分别为" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "=3.24 和" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "=3.30；峰位随注量无明显移动，表明注量不会对峰位产生影响，说明NBE峰对应的发光机制并没有因为注量的增大而发生改变，同时也证明了IBIL可以作为一种晶体发光行为研究的探测技术。" }, { "name": "xref", "data": { "text": "图11(a)", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11(a)" } ] } }, { "name": "text", "data": "中UV 1以及UV 2的拟合直线分别为" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "=0.12 和" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "=0.05；其半高宽的数值随注量无明显改变，即在100 K温度下其半高宽主要受温度影响，不会被注量所影响，即注量不会影响能级展宽，而能级展宽主要与温度相关；300 K温度点下NBE峰位与半高宽与100 K类似，不再赘述。200 K时UV 1峰位随注量略有蓝移，其半高宽随注量略有减小，并且同时发生在200 K温度下，这可能是由于在200 K 时存在一个相变的温度点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，导致峰位以及半高宽的数值随注量发生变化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "同一NBE子峰在不同温度下其谱线半高宽数值也不尽相同，说明温度对其峰型以及半高宽有一定影响。无论是UV 1还是UV 2半高宽都在100 K时达到最小，这主要是因为在温度较高时，电子声子的热振动较强，造成能级展宽，从而导致跃迁谱线半高宽数值较大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；但在200 K时其两个子峰半高宽数值要比300 K时高，这可能是上文提及在200 K附近存在一个相变所致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而导致200 K时半高宽数值要大于300 K。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2.2" } ], "title": [ { "name": "text", "data": "NBE峰辐射硬度" } ], "level": "3", "id": "s3b2" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": "显示了NBE中两个发射中心UV 1(3.10 eV,300 K)和UV 2 (3.20 eV,300 K)在不同温度下随注量的演变。" }, { "name": "xref", "data": { "text": "表3", "type": "table", "rid": "T3", "data": [ { "name": "text", "data": "表3" } ] } }, { "name": "text", "data": "为" }, { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": "中两个发光中心利用公式(1)拟合后得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，可以看出两个发光中心在300 K温度下的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值最大，其次为200 K，最后为100 K，表明300 K温度下紫外发射的辐射硬度最大。同时说明了在100 K温度下，由于大量离子轰击，造成晶体内部迅速形成更多点缺陷并很快形成团簇，俘获大量的电子和空穴，造成非辐射复合概率增加，从而更快抑制了发光。温度升高，辐射硬度增大，这可能是由于温度升高，大量电子空穴获得足够的热动能从原本被点缺陷的束缚中释放出来，再加上温度升高带来的带隙收缩，双重作用使得晶体内部辐射复合发光增强，进而辐射硬度增强。同时也说明，同一温度下MeV离子辐照对于不同缺陷的作用及影响不同，且不同温度下同一缺陷的抗辐照性能也不尽相同。" } ] }, { "name": "fig", "data": { "id": "F12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "UV 1(a)、UV 2(b)峰位在3个不同温度下随注量的演变。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.12" } ], "title": [ { "name": "text", "data": "The evolution of the UV 1(a), UV 2(b) peak with fluence at three different temperatures." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623144&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623151&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623149&type=" } ] } }, { "name": "table", "data": { "id": "T3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "使用公式(1)对图10中两个不同发光中心随注量演变拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "UV1" } ] }, { "name": "text", "data": "代表对UV 1发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "UV2" } ] }, { "name": "text", "data": "代表对UV 2发光中心拟合得到的" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 3" } ], "title": [ { "name": "text", "data": "The " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": " obtained by fitting three different luminescence centers in Fig.10 using Eq.(1) with the evolution of fluence, with " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "UV1" } ] }, { "name": "text", "data": " belonging to the UV 1 peak, " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "UV2" } ] }, { "name": "text", "data": " belonging to the UV 2 peak" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "/K" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "UV1" } ] }, { "name": "text", "data": "/(10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "UV2" } ] }, { "name": "text", "data": "/(10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " ions·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "100" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2.13" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.81" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "4.87" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3.40" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "300" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "12.9" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "7.48" } ] } ] ], "foot": [] } ] } } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文利用2 MeVH" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "作为激发源，在ZnO单晶IBIL光谱中观察到DBE峰和NBE峰，并通过Voigt函数对不同温度和不同注量下上述两个宽峰进行分峰处理，结合ZnO单晶的XPS光谱，确定红光(1.75 eV)主要与V" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "相关，橙红光(1.95 eV)来自于Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到O" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "跃迁；而对于随着温度降低发生红移的绿光(2.10 eV)，主要与V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "相关，其红移主要由于温度降低导致更多电子由导带释放到Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "，之后与V" }, { "name": "sub", "data": [ { "name": "text", "data": "O" } ] }, { "name": "text", "data": "附近的空穴复合。而对于NBE峰，UV 1(3.10 eV)主要来自于Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "到价带的跃迁，而UV 2(3.20 eV)主要来自于激子复合，上述两个子峰红移原因分别是Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "导致的ZnO内部局域能级的形成和温度升高带来的带隙收缩。利用单指数公式对发光强度随注量的衰减进行拟合，利用" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "值表征缺陷的辐射硬度，发现DBE 3个子峰都在200 K时达到辐射硬度最大；而对于NBE两个子峰，却在300 K时辐射硬度最大，说明同一温度下辐照对于不同缺陷影响不尽相同，且同一缺陷在不同温度下其辐射硬度也有所差异。" } ] }, { "name": "p", "data": [ { "name": 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