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1.北京师范大学核科学与技术学院 射线束教育部重点实验室,北京 100875
2.北京市辐射中心,北京 100875
[ "赵国强(1996-),男,辽宁葫芦岛人,博士研究生,2019年于成都理工大学获得学士学位,主要从事半导体材料离子激发发光与材料辐照效应的研究。E-mail: 202131220022@mail.bnu.edu.cn" ]
[ "王广甫(1964-),男,河北邢台人,博士,教授级高工,1999年于北京师范大学获得博士学位,主要从事离子束分析技术及应用和MeV离子注入应用的研究。E-mail: 88088@bnu.edu.cn" ]
[ "仇猛淋(1991-),男,江苏盐城人,博士,讲师,2018年于北京师范大学获得博士学位,主要从事离子辐照及离子束分析的研究。E-mail: 11112020052@bnu.edu.cn" ]
纸质出版日期:2022-02,
收稿日期:2021-11-01,
修回日期:2021-11-19,
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赵国强, 张金福, 王广甫, 等. 利用离子激发发光研究低温条件下ZnO发光行为[J]. 发光学报, 2022,43(2):226-237.
Guo-qiang ZHAO, Jin-fu ZHANG, Guang-fu WANG, et al. ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence[J]. Chinese Journal of Luminescence, 2022,43(2):226-237.
赵国强, 张金福, 王广甫, 等. 利用离子激发发光研究低温条件下ZnO发光行为[J]. 发光学报, 2022,43(2):226-237. DOI: 10.37188/CJL.20210339.
Guo-qiang ZHAO, Jin-fu ZHANG, Guang-fu WANG, et al. ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence[J]. Chinese Journal of Luminescence, 2022,43(2):226-237. DOI: 10.37188/CJL.20210339.
离子激发发光(Ions beam induced luminescence
IBIL)可以实时原位分析不同温度、不同离子辐照条件下材料内部点缺陷的演变行为。本文利用2 MeV H
+
研究了300
200
100 K温度下ZnO单晶内部点缺陷发光及其随注量的演变行为。实验中发现ZnO深能级发射和近带边发射,结合Voigt分峰与XPS实验结果,确定红光(1.75 eV)与V
Zn
相关,橙红光(1.95 eV)来自Zn
i
到O
i
跃迁;对于与V
O
相关的绿光(2.10 eV),其红移可能由于温度降低导致更多电子由导带释放到Zn
i
。峰中心位于3.10 eV和3.20 eV近带边发射分别来自于Zn
i
到价带的跃迁和激子复合,红移原因分别为Zn
i
附近局域化能级和带隙收缩。利用单指数公式对发光强度进行拟合,获得的衰减速率常数(
f
)可以表征缺陷的辐射硬度,对比发现深能级发射峰在200 K时辐射硬度最大,而近带边发射峰在300 K时辐射硬度最大。
Ions beam induced luminescence(IBIL) can be used to analyze the evolution of defects under different temperatures and different ion irradiation conditions in real-time
in situ.
In this paper
the evolution of luminescence of point defects with fluence inside ZnO single crystals at 300
200
100 K was analyzed using 2 MeV H
+
. The deep-band emission and near-band emission of ZnO were observed in the experiments
and combined with the Voigt splitting results
it was determined that the origin of red emission(1.75 eV) was V
Zn
and the orange-red emission(1.95 eV) was associated with the transitions from the conduction band to O
i
. While for the green emission(2.10 eV) that redshifts with decreasing temperature
it was mainly related to V
O
. The reason of redshift was that more electrons from conduction band were released to Zn
i
. For the near-band emission
3.10 eV and 3.20 eV emission mainly associated with the transitions from Zn
i
to the valence band and recombination of excitons
and the redshifts were mainly due to the localization energy level of Zn
i
and the temperature-induced band-gap shrinkage. Using the single exponential formula to fit the decay of the luminescence intensity with fluence
the decay rate costant(
f
) was used to characterize the irradiation hardness of the defects. It was found that all three peaks of the deep-band emission were the maximum irradiation hardness at 200 K
while for the two peaks of the near-band emission
they had the maximum irradiation hardness at 300 K. This may be due to the fact that during the temperature increase
a large number of electron holes obtained enough thermal kinetic energy to be released from the originally bound by the point defect
coupled with the temperature-induced band-gap shrinkage
the dual effect made the radiation recombination inside the crystal enhanced
and thus the irradiation resistance was enhanced.
离子激发发光温度点缺陷ZnO
ion-beam-induced luminescencetemperaturepoint defectsZnO
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