量子垒高度对深紫外LED调制带宽的影响 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "量子垒高度对深紫外LED调制带宽的影响" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "郭", "givenname": "亮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GUO", "givenname": "Liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "郭亮(1996-)，男，江西吉安人，硕士研究生，2018年于合肥工业大学获得学士学位，主要从事通信用深紫外LED的研究。E-mail: guoliang18@semi.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777011&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777017&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777021&type=" } ], "data": [ [ { "name": "text", "data": "郭亮" }, { "name": "text", "data": "(1996-)，男，江西吉安人，硕士研究生，2018年于合肥工业大学获得学士学位，主要从事通信用深紫外LED的研究。E-mail: " }, { "name": "text", "data": "guoliang18@semi.ac.cn" } ] ] } ], "email": "guoliang18@semi.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "郭", "givenname": "亚楠", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GUO", "givenname": "Ya-nan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "羊", "givenname": "建坤", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YANG", "givenname": "Jian-kun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "闫", "givenname": "建昌", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YAN", "givenname": "Jian-chang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "军喜", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jun-xi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "魏", "givenname": "同波", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WEI", "givenname": "Tong-bo", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "zh", "text": "*E-mail: tbwei@semi.ac.cn", "data": [ { "name": "text", "data": "*E-mail: tbwei@semi.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "魏同波(1978-)，男，山东潍坊人，博士，研究员，2007年于中国科学院半导体研究所获得博士学位，主要从事宽禁带半导体材料生长及器件制备的研究。E-mail: tbwei@semi.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777027&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777031&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777036&type=" } ], "data": [ [ { "name": "text", "data": "魏同波" }, { "name": "text", "data": "(1978-)，男，山东潍坊人，博士，研究员，2007年于中国科学院半导体研究所获得博士学位，主要从事宽禁带半导体材料生长及器件制备的研究。E-mail: " }, { "name": "text", "data": "tbwei@semi.ac.cn" } ] ] } ], "email": "tbwei@semi.ac.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学院半导体研究所　半导体照明研发中心，北京　100083", "data": [ { "name": "text", "data": "中国科学院半导体研究所　半导体照明研发中心，北京　100083" } ] }, { "lang": "en", "label": "1", "text": "Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China", "data": [ { "name": "text", "data": "Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学　材料与光电研究中心，北京　100049", "data": [ { "name": "text", "data": "中国科学院大学　材料与光电研究中心，北京　100049" } ] }, { "lang": "en", "label": "2", "text": "Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "AlGaN基深紫外LED由于具有高调制带宽和小芯片尺寸，在紫外光通信领域受到越来越多的关注。本研究通过改变生长AlGaN量子垒层的Al源流量，生长了三种具有不同量子垒高度的深紫外LED，研究了量子垒高度对深紫外LED光电特性和调制特性的影响。研究发现，随着量子垒高度的增加，深紫外LED的光功率出现先增加后减小的趋势，量子垒中Al组分为55%的深紫外LED的光功率相比50%和60%的深紫外LED提升了近一倍。载流子寿命则出现先减小后增大的趋势，且发光峰峰值波长逐渐蓝移。APSYS模拟表明，随着量子垒高度增加，量子垒对载流子的束缚能力增强，电子空穴波函数空间重叠增加，载流子浓度和辐射复合速率增加；但进一步增加量子垒高度又会由于电子泄露，空穴浓度降低，从而辐射复合速率降低。量子垒中Al组分为55%的深紫外LED的-3 dB带宽达到94.4 MHz，高于量子垒Al组分为50%和60%的深紫外LED。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "AlGaN-based deep ultraviolet LED has attracted more and more attention in ultraviolet communication due to its high modulation bandwidth and small chip size. In this study,AlGaN-based deep ultraviolet LEDs with varied Al composition of 50%, 55%, 60% in quantum barriers are fabricated. The effect of barrier height on the photoelectric and modulation characteristics of deep ultraviolet LEDs is studied. It is found that the optical power and external quantum efficiency (EQE) of the deep ultraviolet LED increase first and then decreased, and carrier lifetime decreases first and then increases as the quantum barrier height increases. The peak wavelength of the spectra shows a blue-shift. APSYS simulation revealed that the spacial overlap between the wave function of electron and hole is enhanced as Al composition increases. But further increase on barrier height will lead to current leakage which reduces the radiation recombination rate and carrier density in multi-quantum well layer. The -3 dB bandwidth of deep ultraviolet LED with 55% Al composition in quantum barrier is measured to be 94.4 MHz, higher than those with 50% and 60% Al composition in quantum barrier." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "紫外光通信" } ], [ { "name": "text", "data": "深紫外发光二极管" } ], [ { "name": "text", "data": "多量子阱层" } ], [ { "name": "text", "data": "调制带宽" } ], [ { "name": "text", "data": "发光功率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "ultraviolet communication" } ], [ { "name": "text", "data": "deep ultraviolet light-emitting diodes" } ], [ { "name": "text", "data": "multiple-quantum-well layer" } ], [ { "name": "text", "data": "modulation bandwidth" } ], [ { "name": "text", "data": "optical power" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "随着深紫外LED和日盲探测器的发展，紫外光通信受到越来越多的关注。紫外光通信利用紫外光传输信号，该信号可以被漂浮在空气中的微粒和气溶胶等散射和反射，实现非视距通信" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。紫外光通信中使用的紫外光也称为日盲紫外光，它在光谱中位于200~280 nm之间" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R3", "R4" ], "text": "3-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当太阳辐射穿过大气层时，会被空气中的水蒸气、二氧化碳、氧气、臭氧、悬浮颗粒和其他气体分子强烈散射、吸收或反射，从而导致太阳光谱不连续。在所有分子和粒子中，仅占大气0.01%~0.1%的臭氧在紫外光谱中具有很强的吸收带，从而使得到达地表的太阳光中日盲紫外光含量极少，这则为紫外光通信提供了低背景噪声的通信环境" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，紫外光通信还具有高保密性、无需频段许可、抗干扰能力强等优势，这使得紫外光通信在军事领域具有重要应用价值。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "紫外光源作为紫外光通信系统中重要的组成部分，其光功率决定了紫外光通信系统的传输距离，而其带宽决定了通信速率的上限" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。紫外光通信系统中最常用的三种光源包括气体放电灯、激光器和LED。气体放电灯制造成本低、输出功率大，激光器的光线相干性高、单色性好、发散性低，然而这两种光源都存在体积大、功耗大、调制速率低的缺点。AlGaN基LED由于具有更高的调制带宽和更小的芯片尺寸，在紫外光通信中得到了越来越广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R7", "R8", "R9" ], "text": "7-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "近年来，越来越多的研究团体开始研究基于深紫外LED作为光源的紫外光通信。Alkhazragi等基于商用发光波长为279 nm的深紫外LED实现了1 m链路上通信速率为2.4 Gbps的紫外光通信系统，测得调制带宽为170 MHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2018年，Kojima等基于调制带宽为153 MHz、发光波长为280 nm的深紫外LED，在1.5 m链路上实现了1.6 Gbps的通信速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年，He等制备了AlGaN基262 nm深紫外Micro-LED阵列，在71 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下，测得调制带宽达到了438 MHz，在0.3 m链路上实现了高达1.1 Gbps的数据传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Zhu等制备了100 μm深紫外Micro-LED，在400 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下，测得调制带宽为452.53 MHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "尽管AlGaN基深紫外LED在紫外光通信中已经得到了广泛应用，但目前大部分研究仍集中在LED芯片工艺的改进上。关于深紫外LED外延结构对调制特性的影响的研究几乎处于空白状态。本研究通过改变生长AlGaN量子垒层时的Al源流量，控制了量子垒中Al组分分别为50%、55%和60%，生长了三种具有不同量子垒高度的深紫外LED，研究了量子垒高度对深紫外LED光电特性和调制特性的影响。并借助APSYS模拟和时间分辨光致发光光谱对实验结果进行了深入分析。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "实验中首先在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面蓝宝石衬底上生长1 μm厚的AlN缓冲层，然后在1 130 ℃下沉积20个周期的AlN(2 nm)/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "N(2 nm)超晶格层。然后依次生长1.8 μm厚Si掺杂浓度为3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "的n-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.61" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.39" } ] }, { "name": "text", "data": "N层，5个周期Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "N (3 nm)/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5/0.55/0.6" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5/0.45/0.4" } ] }, { "name": "text", "data": "N(12 nm)多量子阱层，50 nm厚的Mg掺杂p-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "N电子阻挡层，30 nm厚p-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "N层以及150 nm厚Mg掺杂浓度为1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "的p-GaN层。随后，在800 ℃氮气气氛下退火20 min以激活Mg受主。对生长得到的深紫外LED外延片使用标准紫外流片工艺，制备了倒装结构深紫外LED，芯片尺寸为250 μm×550 μm," }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为外延片结构示意图。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "紫外外延片结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Wafer structure of ultraviolet LED" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777042&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777051&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777047&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "样品表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "LED光功率测试采用的是远方光电公司HAAS-2000高精度快速光谱辐射计，该设备光谱范围为200~2 550 nm。光致发光光谱测试采用215 nm紫外激光器作为激发光源，激光功率为31 mW，所用光栅线密度为1 200 l/mm，测试波长范围为240~320 nm，步长为0.2 nm，积分时间为1.0 s，测试环境温度为295 K。带宽测试系统采用安捷伦E5061B型网络分析仪，其扫描频率范围为5 Hz~3 GHz，可覆盖氮化物LED的频率响应范围。直流偏置源采用Keithley 2420作为电流源，该电流源最大输出电流为3 A，最大输出电压为60 V。紫外探测器采用Thorlabs 公司APD430A2/M型硅基雪崩探测器，可探测波长范围是200~1 000 nm，可覆盖整个UVC波段。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "为实验中使用的带宽测试系统示意图。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "带宽测试系统示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Diagram of bandwidth testing system" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777056&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777066&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777061&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "电致发光光谱" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "是3种不同量子垒高度深紫外LED的EL测试结果。在20 mA电流下，量子垒中Al组分为50%、55%和60%的深紫外LED的峰值波长分别为280.4,276.5,274.0 nm，可以看出随着量子垒中Al组分的增加，深紫外LED的峰值波长逐渐蓝移。这是因为随着量子垒高度增加，量子阱对电子空穴的束缚能力增加，电子和空穴波函数的空间分离减小，量子限制效应增强，从而导致蓝移。同时可以看出，随着电流从20 mA增加到100 mA，深紫外LED的峰值波长逐渐红移。Al组分为50%的深紫外LED的峰值波长红移了1.2 nm,Al组分为55%的深紫外LED的峰值波长红移了2 nm,Al组分为60%的深紫外LED的峰值波长红移了1 nm。同时LED的发光峰半高宽也逐渐展宽，Al组分为50%的深紫外LED的半高宽从9.9 nm展宽到10.8 nm,Al组分为55%的深紫外LED的半高宽从11.3 nm展宽到12 nm,Al组分为60%的深紫外LED的半高宽从10.7 nm展宽到11.7 nm。这是因为根据焦耳定律，随着电流增加，单位时间内产生的热量增加。根据能带宽度和温度的关系，深紫外LED的能带宽度会随着温度升高而线性减小，从而导致发光波长红移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。热量的增加还会导致量子限制斯塔克效应增强，从而导致半高宽增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "量子垒中Al组分为50%(a)、55%(b)、60%(c)的深紫外LED的EL光谱随电流的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "EL spectra of ultraviolet LED with Al composition of 50%(a), 55%(b), 60%(c) in quantum barrier under varied currents." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777071&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777081&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777077&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "光功率" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "对3种不同量子垒高度的深紫外LED芯片进行光电测试，得到不同测试电流下的光功率测试结果，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。可以看出光功率随着量子垒高度的增加，出现先增大后减小的趋势。这是因为随着量子垒高度的增加，量子阱对电子空穴的束缚能力增强，使得电子空穴浓度增加，从而导致光功率增大。但进一步增加量子垒高度，会导致电子阻挡层对过冲电子的束缚能力减弱，过冲电子与p型区的空穴复合，导致空穴电流减小，最终导致光功率降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "量子垒中Al组分为50%、55%、60%的深紫外LED的光功率随电流的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Optical power of ultraviolet LED with Al composition of 50%, 55%, 60% in quantum barrier under varied currents." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777086&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777096&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777091&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "APSYS模拟" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "我们使用APSYS软件对不同量子垒高度的AlGaN基深紫外LED的能带结构进行了模拟。模拟时，深紫外LED的注入电流为62.5 mA，器件尺寸为 250 μm×250 μm，从下到上为蓝宝石衬底、AlN缓冲层、n-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.55" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.45" } ] }, { "name": "text", "data": "N层、有源区、p-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.65" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "N电子阻挡层、p-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.55" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.45" } ] }, { "name": "text", "data": "N层、p-GaN层。有源区由5个量子阱层和6个量子垒层组成，阱层为2 nm厚的A" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777101&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777111&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777106&type=" } } } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.55" } ] }, { "name": "text", "data": "N，垒层为10 nm厚的 Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5/0.55/0.6" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5/0.45/0.4" } ] }, { "name": "text", "data": "N。不同量子垒高度的AlGaN基的深紫外LED的能带结构如" }, { "name": "xref", "data": { "text": "图5(a)、(b)、(c)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(a)、(b)、(c)" } ] } }, { "name": "text", "data": "所示。可以看出，随着量子垒高度的增加，电子和空穴的波函数空间分离逐渐减小，我们进一步对其辐射复合速率进行了模拟，模拟结果如" }, { "name": "xref", "data": { "text": "图5(d)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(d)" } ] } }, { "name": "text", "data": "所示。辐射复合速率随着量子垒高度出现了先增加后减小的趋势。这是因为随着量子垒高度的增加，量子垒对载流子的束缚作用增加，使得量子阱内的载流子浓度增大，同时由于电子和空穴的空间波函数重叠增加，辐射复合所占的比重也会增加，从而辐射复合速率增大。但进一步增加量子垒高度又会由于电子泄漏，从而导致辐射复合速率减小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "量子垒中Al组分为50%(a)、55%(b)、60%(c)的深紫外LED的能带结构示意图；(d)量子垒中Al组分为50%、55%和60%的深紫外LED的辐射复合速率分布示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "Band structure of ultraviolet LED with Al composition of 50%(a), 55%(b), 60%(c) in quantum barrier. (d)Radiation recombination rate of ultraviolet LED with Al composition of 50%, 55% and 60% in quantum barrier." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777118&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777126&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777121&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "时间分辨光致发光光谱" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "我们对不同量子垒高度的深紫外LED进行了时间分辨光致发光光谱(TRPL)测试。不同量子垒高度深紫外LED的TRPL测试结果如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。通过对曲线的衰减部分使用以下公式进行双衰减指数拟合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777132&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777139&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777143&type=" } } } ], "id": "DF1" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "满足1/" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "=1/" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "nr" } ] }, { "name": "text", "data": "+1/" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "nr" } ] }, { "name": "text", "data": "为非辐射复合载流子寿命，" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为辐射复合载流子寿命。量子垒中Al组分为50%、55%和60%的深紫外LED的载流子寿命分别为432,276,352 ps。可以看出载流子寿命随着量子垒中Al组分的增加出现先减小后增大的趋势。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "量子垒中Al组分为50%、55%、60%的深紫外LED的TRPL光谱随电流的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "TRPL spectra of ultraviolet LED with Al composition of 50%, 55%, 60% in quantum barrier." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777145&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777153&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777150&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "热平衡状态下，pn结中的载流子复合速率可以由以下公式得到:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777158&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777164&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777167&type=" } } } ], "id": "DF2" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为复合常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为电子浓度，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为空穴浓度，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "为过剩载流子浓度。经整理后可以得到如下公式:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777172&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777176&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777180&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "由于在p型区中，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "远大于" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "，因此上述公式可以进一步简化为:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777183&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777187&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777191&type=" } } } ], "id": "DF4" } }, { "name": "text", "data": "载流子寿命可以由以下公式表示:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777195&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777199&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777203&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "由于载流子寿命和辐射复合速率成反比，随着量子垒高度增加，量子垒对载流子的束缚作用增强，辐射复合速率增加，载流子寿命因此减小。但进一步增加量子垒高度又会由于电子泄漏，导致辐射复合速率减小，载流子寿命增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.5" } ], "title": [ { "name": "text", "data": "调制带宽测试" } ], "level": "2", "id": "s3e" } }, { "name": "p", "data": [ { "name": "text", "data": "在60 mA电流下，测试得到了深紫外LED的频率响应结果如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示。量子垒中Al组分为50%、55%和60%的深紫外LED的-3 dB带宽分别为75.0,94.4,82.0 MHz。深紫外LED的调制带宽随着量子垒高度的增加，出现了先增加后减小的趋势。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "量子垒中Al组分为50%、55%、60%的深紫外LED的频率响应图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "Frequency response of ultraviolet LED with Al composition of 50%, 55%, 60% in quantum barrier." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777207&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777216&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777212&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "LED的调制带宽主要受到载流子寿命和RC时间常数决定，并且对于常规尺寸LED，其主要受载流子辐射复合寿命决定。载流子辐射复合寿命决定了发光强度在交变信号下的上升和下降时间，也决定了光功率随交变信号变化反应的快慢。两者之间满足以下关系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(6)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777222&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777227&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777232&type=" } } } ], "id": "DF6" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "3 dB" } ] }, { "name": "text", "data": "为LED的-3 dB 带宽，" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为双分子复合系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "为电流密度，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "为元电荷，" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "为有源区厚度。载流子寿命越短，则光子随外电流变化反应的速度越快，从而调制带宽越高。这一结果也与3.4中载流子寿命的结果相吻合。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了量子垒高度对深紫外LED光电特性和调制特性的影响，制备了3种具有不同量子垒高度的深紫外LED。研究发现，随着量子垒高度的增加，深紫外LED的光功率和外量子效率出现先增加后减小的趋势，载流子寿命则出现先减小后增大的趋势，EL光谱发光峰峰值波长逐渐蓝移。最后，我们使用基于网络分析仪的带宽测试系统对不同量子垒高度的深紫外LED进行了带宽测试，测得量子垒中Al组分为50%、55%和60%的深紫外LED的-3 dB带宽分别为75.0,94.4,85.0 MHz。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210331." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "UAN R Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MA J S" }, { "name": "text", "data": ". 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