高性能9xx nm大功率半导体激光器

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高性能9xx nm大功率半导体激光器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High Performance 9xx nm High Power Semiconductor Laser" } ] } ] }, "contribgroup": { "author": [ { "name": [], "stringName": [ { "lang": "zh", "surname": "袁庆贺", "prefix": "" }, { "lang": "en", "surname": "YUAN Qing-he", "prefix": "" } ], "aff": [ { "rid": "1660366", "text": "1" }, { "rid": "1825537", "text": "2" } ], "role": [ "first-author" ], "deceased": false }, { "name": [], "stringName": [ { "lang": "zh", "surname": "井红旗", "prefix": "" }, { "lang": "en", "surname": "JING Hong-qi", "prefix": "" } ], "aff": [ { "rid": "1660366", "text": "1" } ], "role": [], "deceased": false }, { "name": [], "stringName": [ { "lang": "zh", "surname": "仲莉", "prefix": "" }, { "lang": "en", "surname": "ZHONG Li", "prefix": "" } ], "aff": [ { "rid": "1660366", "text": "1" } ], "role": [], "deceased": false }, { "name": [], "stringName": [ { "lang": "zh", "surname": "刘素平", "prefix": "" }, { "lang": "en", "surname": "LIU Su-ping", "prefix": "" } ], "aff": [ { "rid": "1660366", "text": "1" } ], "role": [], "deceased": false }, { "name": [], "stringName": [ { "lang": "zh", "surname": "马骁宇", "prefix": "" }, { "lang": "en", "surname": "MA Xiao-yu", "prefix": "" } ], "aff": [ { "rid": "1660366", "text": "1" }, { "rid": "1825537", "text": "2" } ], "role": [], "deceased": false } ], "aff": [ { "id": "1660366", "intro": [ { "lang": "zh", "label": "1", "text": " 中国科学院半导体研究所 光电子器件国家工程中心 北京,100083", "data": [ { "name": "text", "data": " 中国科学院半导体研究所 光电子器件国家工程中心 北京,100083" } ] }, { "lang": "en", "label": "1", "text": " National Engineering Research Center for Optoelectronic devices, Institute of Semiconductors, Chinese Academy of Sciences", "data": [ { "name": "text", "data": " National Engineering Research Center for Optoelectronic devices, Institute of Semiconductors, Chinese Academy of Sciences" } ] } ] }, { "id": "1825537", "intro": [ { "lang": "zh", "label": "2", "text": " 中国科学院大学 材料科学与光电技术学院 北京,100049", "data": [ { "name": "text", "data": " 中国科学院大学 材料科学与光电技术学院 北京,100049" } ] }, { "lang": "en", "label": "2", "text": " College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": " College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "为了改善9xx nm高功率半导体激光器的性能，对n包层和p包层的掺杂分布进行了调整，以减小激光器的内部损耗。同时为了减小有源区载流子的泄漏，在有源区和波导层之间引入了高能量带隙GaAsP。设计并制作了内部损耗为1.25 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的高功率激光器。器件可靠性工作的最大输出功率为26.5 W。当输出功率为10.5 W时，最大电光功率转换效率为72.4%，斜率效率为1.16 W/A。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "To improve the performance of 9xx nm high power semiconductor lasers, the doping profile of n-cladding layer and p-cladding layer is adjusted to reduce the internal loss. A high energy band gap GaAsP was introduced between the active region and the waveguide layer to reduce the leakage of carriers in the active region. A broad area laser with internal loss of 1.25 cm is designed and fabricated. The device with maximum output power of 26.5 W is obtained. The maximum electrical-optical power conversion efficiency is 72.4%, which is obtained when the output power is 10.5 W. The slope efficiency is 1.16 W/A." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "激光二极管" } ], [ { "name": "text", "data": "内部损耗" } ], [ { "name": "text", "data": "自由载流子吸收" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "laser diode" } ], [ { "name": "text", "data": "internal loss" } ], [ { "name": "text", "data": "free carrier absorption" } ] ] } ], "highlights": [], "body": [], "footnote": [], "reflist": { "data": [ { "id": "ref1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "JACKSON S D,KING T A,POLLNAU M. Efficient high power operation of erbium 3m fibre laser diode-pumped at 975 nm[J]. Electron. Lett., 2000,36(8):223-224." } ] } ] }, { "id": "ref2", "label": "2", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "KAGEYAMA N,TORII K,MORITA T,et al.. Efficient and reliable high-power laser diode bars with low-smile implementation[J]. IEEE J. 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