高性能9xx nm大功率半导体激光器

袁庆贺; 井红旗; 仲莉; 刘素平; 马骁宇

doi:10.3788/fgxb20204102.0194

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高性能9xx nm大功率半导体激光器

器件制备及器件物理 | 更新时间：2020-08-12

- 高性能9xx nm大功率半导体激光器
- High Performance 9xx nm High Power Semiconductor Laser
- 发光学报 2020年41卷第2期页码：194-198
- 作者机构：
  
  1. 中国科学院半导体研究所光电子器件国家工程中心北京,100083
  2. 中国科学院大学材料科学与光电技术学院北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金（41414010302）资助项目()
- DOI：10.3788/fgxb20204102.0194
  中图分类号：
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袁庆贺, 井红旗, 仲莉等. 高性能9xx nm大功率半导体激光器[J]. 发光学报, 2020,41(2): 194-198

YUAN Qing-he, JING Hong-qi, ZHONG Li etc. High Performance 9xx nm High Power Semiconductor Laser[J]. Chinese Journal of Luminescence, 2020,41(2): 194-198
袁庆贺, 井红旗, 仲莉等. 高性能9xx nm大功率半导体激光器[J]. 发光学报, 2020,41(2): 194-198 DOI： 10.3788/fgxb20204102.0194.

YUAN Qing-he, JING Hong-qi, ZHONG Li etc. High Performance 9xx nm High Power Semiconductor Laser[J]. Chinese Journal of Luminescence, 2020,41(2): 194-198 DOI： 10.3788/fgxb20204102.0194.

摘要

为了改善9xx nm高功率半导体激光器的性能，对n包层和p包层的掺杂分布进行了调整，以减小激光器的内部损耗。同时为了减小有源区载流子的泄漏，在有源区和波导层之间引入了高能量带隙GaAsP。设计并制作了内部损耗为1.25 cm,-1,的高功率激光器。器件可靠性工作的最大输出功率为26.5 W。当输出功率为10.5 W时，最大电光功率转换效率为72.4%，斜率效率为1.16 W/A。

Abstract

To improve the performance of 9xx nm high power semiconductor lasers, the doping profile of n-cladding layer and p-cladding layer is adjusted to reduce the internal loss. A high energy band gap GaAsP was introduced between the active region and the waveguide layer to reduce the leakage of carriers in the active region. A broad area laser with internal loss of 1.25 cm is designed and fabricated. The device with maximum output power of 26.5 W is obtained. The maximum electrical-optical power conversion efficiency is 72.4%, which is obtained when the output power is 10.5 W. The slope efficiency is 1.16 W/A.

关键词

激光二极管内部损耗自由载流子吸收

Keywords

laser diodeinternal lossfree carrier absorption

references

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