高性能超薄In-Ga-Zn-O突触晶体管制备

杨倩; 杜世远; 罗榕思

doi:10.37188/CJL.20200296

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高性能超薄In-Ga-Zn-O突触晶体管制备

器件制备及器件物理 | 更新时间：2021-02-08

- 高性能超薄In-Ga-Zn-O突触晶体管制备
- Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer
- 发光学报 2021年42卷第2期页码：250-256
- 作者机构：
  
  1.福州大学至诚学院, 福建福州 350002
  2.福建卫生职业技术学院, 福建福州 350101
  3.福建省建筑科学研究院, 福建福州 350101
- 作者简介：
  
  [ "杨倩(1988-), 女, 山西太原人, 博士研究生, 讲师, 2013年于福州大学获得硕士学位, 主要从事薄膜晶体管的研究。E-mail:yqian_0116@163.com" ]
  [ "杜世远(1988-), 男, 福建泉州人, 硕士, 讲师, 2013年于福州大学获得硕士学位, 主要从事半导体器件及医学影像设备的研究。E-mail:282323559@qq.com" ]
- 基金信息：
  
  Special Research for Vocational Education on Both Sides of the Taiwan Strait(FJJKHX17-072);福建省教育厅中青年教师教育科研项目(JT180812)
- DOI：10.37188/CJL.20200296
  中图分类号： TN321.5
- 纸质出版日期：2021-2，
  
  收稿日期：2020-10-9，
  
  录用日期：2020-12-9
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杨倩, 杜世远, 罗榕思. 高性能超薄In-Ga-Zn-O突触晶体管制备[J]. 发光学报, 2021,42(2):250-256.

Qian YANG, Shi-yuan DU, Rong-si LUO. Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer[J]. Chinese Journal of Luminescence, 2021,42(2):250-256.
杨倩, 杜世远, 罗榕思. 高性能超薄In-Ga-Zn-O突触晶体管制备[J]. 发光学报, 2021,42(2):250-256. DOI： 10.37188/CJL.20200296.

Qian YANG, Shi-yuan DU, Rong-si LUO. Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer[J]. Chinese Journal of Luminescence, 2021,42(2):250-256. DOI： 10.37188/CJL.20200296.

摘要

近年来，二维材料（2D materials）突触晶体管器件由于其维度低、可同时读写操作、效率高等优势，受到了研究者的广泛关注。然而，由于二维材料的工艺兼容性、重复性以及复杂的转移过程，它的实现仍然是一个巨大的挑战。本文采用简单的提拉法工艺，实现了超薄铟镓锌氧化物（In-Ga-Zn-O，IGZO）半导体层（小于8 nm）的突触晶体管，其工作电压低至3 V；并成功地模拟了重要的生物突触行为，包括兴奋性后突触电流（EPSC）、双脉冲易化（PPF）以及突触长程增强（LTP）等。在超薄半导体薄膜条件下，由于缺陷的增强效应和栅电压对超薄半导体层可控性的提高，有效提升了突触器件的记忆保持能力，使其长程性能得到增强。这种改善突触晶体管长程特性的方式，为利用普通材料制作高性能二维突触晶体管提供了一种简单易行的方法。

Abstract

In recent years

two-dimensional materials(2D materials) based synaptic transistor devices have attracted extensive attention due to their low dimension

simultaneous read-write operation and high efficiency. However

the process compatibility

repeatability and complex transfer process of these materials are still a great challenge. In this work

a simple dip-coating method was utilized to realize a synaptic transistor with an ultra-thin indium gallium zinc oxide(In-Ga-Zn-O

IGZO) semiconductor layer(less than 8 nm). The operating voltage was as low as 3 V. The important biological synaptic behaviors were successfully simulated

including excitatory post-synaptic current(EPSC)

paired pulse facilitation(PPF)

and long-term potentiation(LTP). Under ultra-thin condition

due to the enhancement effect of defects and the improvement of the controllability of ultra-thin active layer by gate voltage

the memory retention ability of our synaptic transistor is improved. Our work proposed a way to improve the long-term characteristics of synaptic transistors

and provided a simple and easy method for the preparation of high-performance ultra-thin synaptic transistors using common materials.

关键词

超薄金属氧化物薄膜晶体管突触

Keywords

ultra-thinmetal-oxide thin film transistorsynapse

references

HARRIS J J, JOLIVET R, ATTWELL D. Synaptic energy use and supply[J].Neuron, 2012, 75(5):762-777.

WANG Z Y, WANG L Y, NAGAI M, et al.. Nanoionics-enabled memristive devices:strategies and materials for neuromorphic applications[J].Adv. Electron. Mater., 2017, 3(7):1600510.

杨文宇, 张国成, 崔宇, 等.喷墨打印金属氧化物异质结晶体管[J].发光学报, 2019, 40(4):497-503.

YANG W Y, ZHANG G C, CUI Y, et al.. Inkjet Printed metal oxide heterojunction thin-film transistor[J].Chin. J. Lumin., 2019, 40(4):497-503. (in Chinese)

PAUL T, AHMED T, TIWARI K K, et al.. A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing[J].2D Mater., 2019, 6(4):045008.

YANG J T, GE C, DU J Y, et al.. Artificial synapses emulated by an electrolyte-gated tungsten-oxide transistor[J].Adv. Mater., 2018, 30(34):1801548-1-10.

MAO J Y, HU L, ZHANG S R, et al.. Artificial synapses emulated through a light mediated organic-inorganic hybrid transistor[J].J. Mater. Chem. C, 2019, 7(1):48-59.

WAN C J, LIU Y H, ZHU L Q, et al.. Short-term synaptic plasticity regulation in solution-gated indium-gallium-zinc-oxide electric-double-layer transistors[J].ACS Appl. Mater. Interfaces, 2016, 8(15):9762-9768.

ZHOU Y H, LI J, YANG Y H, et al.. Artificial synapse emulated through fully aqueous solution-processed low-voltage In2O3 thin-film transistor with Gd2O3 solid electrolyte[J].ACS Appl. Mater. Interfaces, 2020, 12(1):980-988.

LI M Y, SU S K, WONG, H S P, et al.. How 2D semiconductors could extend Moore's law[J].Nature, 2019, 567(7747):169-170.

NOVOSELOV K S, JIANG D, SCHEDIN F, et al.. Two-dimensional atomic crystals[J].Proc. Natl. Acad. Sci. USA, 2005, 102(30):10451-10453.

杨祥, 徐兵, 周畅, 等.退火温度对新型有源层WZTO薄膜晶体管性能的影响[J].发光学报, 2019, 40(2):209-214.

YANG X, XU B, ZHOU C, et al.. Influence of annealing temperatures on properties of novel W-Zn-Sn-O thin film transistor[J].Chin. J. Lumin., 2019, 40(2):209-214. (in Chinese)

TIAN H, MI W T, WANG X F, et al.. Graphene dynamic synapse with modulatable plasticity[J].Nano Lett., 2015, 15(12):8013-8019.

ARNOLD A J, RAZAVIEH A, NASR J R, et al.. Mimicking neurotransmitter release in chemical synapses via hysteresis engineering in MoS2 transistors[J].ACS Nano, 2017, 11(3):3110-3118.

张浩, 李俊, 赵婷婷, 等.基于超薄Al2O3栅绝缘层的低工作电压IGZO薄膜晶体管及其在共源极放大器中的应用[J].发光学报, 2020, 41(4):451-460.

ZHANG H, LI J, ZHAO T T, et al.. Low operating voltage IGZO thin-film transistor based on ultrathin Al2O3 gate insulator and its application in common-source amplifier[J].Chin. J. Lumin., 2020, 41(4):451-460. (in Chinese)

SEO D G, LEE Y, GO G T, et al.. Versatile neuromorphic electronics by modulating synaptic decay of single organic synaptic transistor:from artificial neural networks to neuro-prosthetics[J].Nano Energy, 2019, 65:104035-1-10.

REN Y, YANG J Q, ZHOU L, et al.. Gate-tunable synaptic plasticity through controlled polarity of charge trapping in fullerene composites[J].Adv. Funct. Mater., 2018, 28(50):1805599.

YAO Z F, ZHENG Y Q, LI Q Y, et al.. Wafer-scale fabrication of high-performance n-type polymer monolayer transistors using a multi-level self-assembly strategy[J].Adv. Mater., 2019, 31(7):e1806747.

FIORI G, BONACCORSO F, IANNACCONE G, et al.. Electronics based on two-dimensional materials[J].Nat. Nanotechnol., 2014, 9(10):768-779.

CHEN J W, LI E L, YAN Y J, et al.. Flexible metal oxide synaptic transistors using biomass-based hydrogel as gate dielectric[J].J. Phys. D: Appl. Phys., 2019, 52(48):484002.

YANG Q, LV D X, HUANG J S, et al.. Modulation of the plasticity of an all-metal oxide synaptic transistor via laser irradiation[J].Nanotechnology, 2020, 31(21):215202.

LI S M, TIAN M C, GAO Q G, et al.. Nanometre-thin indium tin oxide for advanced high-performance electronics[J].Nat. Mater., 2019, 18(10):1091-1097.

BEOM K, YANG P, PARK D, et al.. Single-and double-gate synaptic transistor with TaOx gate insulator and IGZO channel layer[J].Nanotechnology, 2019, 30(2):025203.

YANG Y H, YANG S S, CHOU K S. Characteristic enhancement of solution-processed In-Ga-Zn oxide thin-film transistors by laser annealing[J].IEEE Electron Device Lett., 2010, 31(9):969-971.

FIORAVANTE D, REGEHR W G. Short-term forms of presynaptic plasticity[J].Curr. Opin. Neurobiol., 2011, 21(2):269-274.

GUO L Q, WAN Q, WAN C J, et al.. Short-Term memory to long-term memory transition mimicked in IZO homojunction synaptic transistors[J].IEEE Electron Device Lett., 2013, 34(12):1581-1583.

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