Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays

Yong-jia WANG; Xu YANG; Jin-chai LI; Kai HUANG; Jun-yong KANG

doi:10.37188/CJL.20220115

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Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays

Theoretical Calculation and Spectral Analysis | 更新时间：2022-08-01

- Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 7, Pages: 1130-1138(2022)
- 作者机构：
  
  1.厦门大学物理学系，微纳光电子材料与器件教育部工程研究中心，福建省半导体材料及应用重点实验室，半导体光电材料及其高效转换器件协同创新中心，福建厦门 361005
  2.厦门市未来显示技术研究院嘉庚创新实验室，福建厦门 361005
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program(2021YFB3600101);the NSFC(61874090);Natural Science Foundation of Fujian Province(2021J01008);Key scientific and technological Program of Xiamen(3502Z20191016)
- DOI：10.37188/CJL.20220115
  CLC： O482.31
- Published：05 July 2022，
  
  Received：29 March 2022，
  
  Revised：14 April 2022，
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王永嘉,杨旭,李金钗等.基于GaN微米阵列结构的单芯片白光LED有源区InGaN/GaN多量子阱结构设计[J].发光学报,2022,43(07):1130-1138.

WANG Yong-jia,YANG Xu,LI Jin-chai,et al.Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays[J].Chinese Journal of Luminescence,2022,43(07):1130-1138.
王永嘉,杨旭,李金钗等.基于GaN微米阵列结构的单芯片白光LED有源区InGaN/GaN多量子阱结构设计[J].发光学报,2022,43(07):1130-1138. DOI： 10.37188/CJL.20220115.

WANG Yong-jia,YANG Xu,LI Jin-chai,et al.Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays[J].Chinese Journal of Luminescence,2022,43(07):1130-1138. DOI： 10.37188/CJL.20220115.

摘要

通过模拟仿真对双波长堆叠的

面InGaN/GaN多量子阱（MQWs）发光二级管的载流子浓度、自发辐射复合率以及极化电场等进行了研究。结果表明，通过调节双波长堆叠的InGaN多量子阱的阱层和垒层厚度，可调控载流子特别是空穴在量子阱有源区的分布，实现双波长发光峰比例调制。进而考察了在相同外延条件下生长的半极性面InGaN/GaN堆叠量子阱LED的发光特性。在此基础上，提出基于多波长堆叠InGaN/GaN多量子阱结构的

面和｛1011｝或｛1122｝半极性面混合的单芯片白光LED设计方案，通过调节

面发光光谱在混合光谱中的比例，可获得覆盖大部分可见光波段、色温从4 500~9 000 K可调、且显色指数最高可达91.3的白光。

Abstract

The carrier concentration， spontaneous emission recombination rate and polarization field of dual-wavelength stacked

-plane InGaN/GaN multiple quantum wells（MQWs） light emitting diode（LED） are simulated with Crosslight APSYS software. The results show that the distribution of carriers， especially holes， in InGaN MQWs can be modified by adjusting the thickness of the well layer and barrier layer. Thus， the illumination in different spectral regimes can be balanced. Furthermore， the optical properties of semipolar InGaN/GaN LEDs with stacked MQWs grown under the same epitaxial conditions are analyzed. Finally， monolithic phosphor-free white LEDs with triple- wavelength stacked MQWs based on GaN micro arrays are proposed， in which the micro arrays consist of ｛1011｝ or ｛1122｝ semipolar facets and

faces. By adjusting the proportion of

-plane illumination， a white LED with color temperature of ~6 000 K and high color rendering index of ~91.3 can be achieved.

关键词

单芯片白光LED半极性面InGaN极化效应

Keywords

monolithic white LEDsemipolarplaneInGaNpolarization effect

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Related Institution

Future Display Institue of Xiamen， Tan Kah Kee Innovation Laboratory

Engineering Research Center of Micro-nano Optoelectronic Materials and Devices， Ministry of Education； Fujian Key Laboratory of Semiconductor Materials and Applications， CI Center for OSED， Department of Physics， Xiamen University

Research Center for Wide Gap Semiconductor, School of Physics, Peking University

Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University

College of Electrical Engineering, Anhui Polytechnic University

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