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吉林大学 电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林 长春,130012
纸质出版日期:2020-4-5,
网络出版日期:2020-2-18,
收稿日期:2019-12-16,
修回日期:2020-2-6,
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曹越, 于佳琪, 张立东等. MOCVD法制备BGaN薄膜[J]. 发光学报, 2020,41(4): 357-363
CAO Yue, YU Jia-qi, ZHANG Li-dong etc. Epitaxial Growth of BGaN Films by MOCVD[J]. Chinese Journal of Luminescence, 2020,41(4): 357-363
曹越, 于佳琪, 张立东等. MOCVD法制备BGaN薄膜[J]. 发光学报, 2020,41(4): 357-363 DOI: 10.3788/fgxb20204104.0357.
CAO Yue, YU Jia-qi, ZHANG Li-dong etc. Epitaxial Growth of BGaN Films by MOCVD[J]. Chinese Journal of Luminescence, 2020,41(4): 357-363 DOI: 10.3788/fgxb20204104.0357.
利用金属有机物化学气相沉积(MOCVD)技术,在蓝宝石衬底上进行了BGaN薄膜的外延生长,研究了生长厚度、温度、压力和B/Ⅲ比等条件对BGaN薄膜中B组分的影响。X射线衍射测试结果表明,降低生长温度、压力以及增加B/Ⅲ比,更有利于提高BGaN薄膜中B的并入效率。在800℃、30 kPa及B/Ⅲ比为30%的生长条件下,制备的BGaN薄膜中B组分最高,为6.1%。
In this work
we used metal organic chemical vapor deposition (MOCVD) technology to carry out epitaxial growth of BGaN films on sapphire substrates. We studied the influence of growth thickness
temperature
pressure and B/Ⅲ ratio on the boron content of the BGaN films. X-ray diffraction measurement results demonstrate that lowering the growth temperature
pressure and increasing the B/Ⅲ ratio are conductive to improving the incorporation efficiency of B in BGaN films. At the growth conditions of 800 ℃
30 kPa and B/Ⅲ ratio of 30%
the B content of the BGaN film is up to the highest with 6.1%.
氮化硼镓金属有机物化学气相沉积薄膜
boron gallium nitridemetal organic chemical vapor depositionfilms
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