新型透明导电薄膜ErF3掺杂In2 O3的研制

张剑楠; 李颜涛; 范翊; 刘星元

doi:10.3788/fgxb20123312.1295

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新型透明导电薄膜ErF₃掺杂In₂ O₃的研制

材料合成及性能研究 | 更新时间：2020-08-12

- 新型透明导电薄膜ErF₃掺杂In₂ O₃的研制
- Study of New Transparent Conductive Film with Erbium Fluoride Doped Indium Oxide
- 发光学报 2012年33卷第12期页码：1295-1298
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51102228)();吉林省科技发展计划(20100570)资助项目()
- DOI：10.3788/fgxb20123312.1295
  中图分类号： TN383+.1
- 纸质出版日期：2012-12-10，
  
  收稿日期：2012-9-23，
  
  修回日期：2012-10-26，
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张剑楠, 李颜涛, 范翊, 刘星元. 新型透明导电薄膜ErF3掺杂In2 O3的研制[J]. 发光学报, 2012,33(12): 1295-1298

ZHANG Jian-nan, LI Yan-tao, FAN Yi, LIU Xing-yuan. Study of New Transparent Conductive Film with Erbium Fluoride Doped Indium Oxide[J]. Chinese Journal of Luminescence, 2012,33(12): 1295-1298
张剑楠, 李颜涛, 范翊, 刘星元. 新型透明导电薄膜ErF3掺杂In2 O3的研制[J]. 发光学报, 2012,33(12): 1295-1298 DOI： 10.3788/fgxb20123312.1295.

ZHANG Jian-nan, LI Yan-tao, FAN Yi, LIU Xing-yuan. Study of New Transparent Conductive Film with Erbium Fluoride Doped Indium Oxide[J]. Chinese Journal of Luminescence, 2012,33(12): 1295-1298 DOI： 10.3788/fgxb20123312.1295.

摘要

利用电子束沉积技术首次制备了氟化铒 (ErF

) 掺杂的氧化铟(In

)透明导电薄膜(IEFO)

研究了薄膜的晶体结构、光学特性和电学特性。利用原子力显微镜测试了不同厚度薄膜的形貌

初步研究了薄膜的生长过程。研究发现:IEFO薄膜为多晶结构

Er原子的掺入改变了薄膜的优势生长方向

使薄膜在(211)、(222)、(444)3个方向上的生长趋势基本相同。薄膜电阻率为1.265×10

-3

Ω·cm

电子迁移率为45.76 cm

·V

-1

·s

-1

电子浓度为1.197×10

-3

在380~780 nm范围内的可见光平均透过率为81%。

Abstract

ErF

doped indium oxide (IEFO) transparent conductive film was fabricated by electron beam evaporation. The optical

electrical characteristics and crystal structure of the IEFO film were studied. The IEFO film is polycrystalline structure

the introduction of Er changes the preferred orientation of lattice and makes the growth tendency of the (211)

(222)

(444) similar. The IEFO film shows a resistivity of 1.265×10

-3

Ω·cm

a carrier mobility of 45.76 cm

·V

-1

·s

-1

a carrier concentration of 1.197×10

-3

and the optical transmittance of 81% at the range of 380~780 nm. The surface morphology of IEFO film in different thickness was tested by atomic force microscope and the growth process was discussed.

关键词

透明导电薄膜形貌氧化铟

Keywords

transparent conductive filmmorphologyIn2O3

references

Chiou B S, Hsieh S T, Wu W F. Deposition of indium tin oxide films on acrylic substrates by radio frequency magnetron sputtering [J]. J. Am. Ceram. Soc., 1994, 77(7):1740-1742.

Minami T. New n-type transparent conducting oxides [J]. MRS Bulletin, 2000, 25(8):38-44.

Lv Y M, Cao P J, Jia F, et al. Optical and electrical properties of heavy-doped AZO transparent conducting thin films [J]. Chin. J. Lumin.(发光学报), 2011, 32(4):307-312 (in Chinese).

Chen W, Rao H B, Jiang Q, et al. Effect of p-type accepter-like on charge transportion of OLEDs [J]. Chin. J. Lumin.(发光学报), 2009, 30(1):51-54 (in Chinese).

Ma W, Yang C, Gong X, et al. Thermal stable, efficient polymer solar cells with nanoscale control of the interpenetrating network morphology [J]. Adv. Funct. Mater., 2005, 15(10):1617-1622.

Fan J C C, Goodenough J B. X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films [J]. J. Appl.Phys., 1977, 48(8):3524-3531.

Wang N, Liu X X, Liu X Y. Ultraviolet luminescent, high-effective-work-function LaTiO3-doped indium oxide and its effects in organic optoelectronics [J]. Adv. Mater., 2010, 22(19):2211-2215.

Liao Y Q, Lu Q P, Fan Y, et al. Manganese-doped indium oxide and its application in organic light-emitting diodes [J]. Appl. Phys. Lett., 2011, 99(2):023302-1-3.

Tian M M, Fan Y, Liu X Y. Fabrication and characteristics of transparent conducting bismuth-doped thin indium oxide Film [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):605-608 (in Chinese).

Song C Y, Chen H, Fan Y, et al. High-work-function transparent conductive oxides with multilayer films [J]. Appl. Phys. Exp., 2012, 5(4):041102-1-5.

Korotcenkov G. Gas response control through structural and chemical modification of metal oxide films: State of the art and approaches [J]. Sens. Actuators B: Chem., 2005, 107(1):209-232.

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