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1. 上海大学材料科学与工程学院 上海,200072
2. 上海大学 新型显示技术与应用集成教育部重点实验室 上海,200072
纸质出版日期:2012-11-10,
收稿日期:2012-7-1,
修回日期:2012-9-20,
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李俊, 周帆, 张建华, 蒋雪茵, 张志林. 用反应溅射法沉积SiO<sub><em>x</em></sub>绝缘层的InGaZnO-TFT的光照稳定性[J]. 发光学报, 2012,(11): 1258-1263
LI Jun, ZHOU Fan, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. The Stability of IGZO-TFT with Reactive Sputtered SiO<sub><em>x</em></sub> Insulator under White Light Illumination[J]. Chinese Journal of Luminescence, 2012,(11): 1258-1263
李俊, 周帆, 张建华, 蒋雪茵, 张志林. 用反应溅射法沉积SiO<sub><em>x</em></sub>绝缘层的InGaZnO-TFT的光照稳定性[J]. 发光学报, 2012,(11): 1258-1263 DOI: 10.3788/fgxb20123311.1258.
LI Jun, ZHOU Fan, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. The Stability of IGZO-TFT with Reactive Sputtered SiO<sub><em>x</em></sub> Insulator under White Light Illumination[J]. Chinese Journal of Luminescence, 2012,(11): 1258-1263 DOI: 10.3788/fgxb20123311.1258.
制备了基于反应溅射SiO
x
绝缘层的InGaZnO-TFT
并系统地研究了InGaZnO-TFT在白光照射下的稳定性
主要涉及到光照、负偏压、正偏压、光照负偏压和光照正偏压5种情况。结果表明
器件在光照和负偏压光照下的阈值偏移较大
而在正偏压光照情况下的阈值偏移几乎可以忽略。采用
C-V
方法证明阈值电压漂移是源于绝缘层/有源层附近及界面处的缺陷。另外
采用指数模式计算了缺陷态的弛豫时间。本研究的目的就是揭示InGaZnO-TFT在白光照射和偏压下的不稳定的原因。
We systematically investigated the stability of gallium indium zinc oxide (IGZO) thin film transistor (TFT) with reactive sputtered SiO
x
insulator under white light illuminaion. The research involved an overall stress conditions that included light stress (LS)
negative voltage stress (NBS)
positive voltage stress (PBS)
negative bias-light stress (NBLS)
and positive bias-light stress (PBLS). The results demonstrate a large threshold voltage shift under LS and NBLS conditions
and a negligible threshold voltage shift under PBLS condition. The
C-V
characteristics indicated that the shift of threshold voltage came from traps generated at or near the dielectric/semiconductor interface. Additionally
the stretched exponential model was used to obtain the relaxation time. This work aimed to provide an instability origin of IGZO-TFT under white light illumination and gate voltage bias.
薄膜晶体管稳定性反应溅射SiOx
thin film transistorstabilityreactive sputtered SiOx
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Ryu B, Noh H K, Choi E A, et al. O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors [J]. Appl. Phys. Lett., 2010, 97(2):022108-1-3.
Chen T C, Chang T C, Hsieh T Y, et al. Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition [J]. Appl. Phys. Lett., 2010, 97(19):192103-1-3.
Park S H K, Ryu M, Yoon S M, et al. Light response of top gate InGaZnO thin film transistor [J]. Jpn. J. Appl. Phys., 2011, 50(3):03CB08-1-4.
Chen T C, Chang T C, Tsai C T, et al. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress [J]. Appl. Phys. Lett., 2010, 97(11):112104-1-3.
Lee J M, Cho I T, Lee J H, et al. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J]. Appl. Phys. Lett., 2008, 93(9):093504-1-3.
Wang L, Zhang G B, Qin X Y, et al. Self-assembly of SiOx novel nanostructures and their optical property [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):390-394 (in Chinese).
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