用反应溅射法沉积SiOx绝缘层的InGaZnO-TFT的光照稳定性

李俊; 周帆; 张建华; 蒋雪茵; 张志林

doi:10.3788/fgxb20123311.1258

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用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性

器件制备及器件物理 | 更新时间：2020-08-12

- 用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性
- The Stability of IGZO-TFT with Reactive Sputtered SiO_x Insulator under White Light Illumination
- 发光学报 2012年33卷第11期页码：1258-1263
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200072
  2. 上海大学新型显示技术与应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61274082,61077013,60777018,60776040)();国家"863"计划 (2010AA3A337, 2008AA03A336
- DOI：10.3788/fgxb20123311.1258
  中图分类号： O472.4
- 纸质出版日期：2012-11-10，
  
  收稿日期：2012-7-1，
  
  修回日期：2012-9-20，
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李俊, 周帆, 张建华, 蒋雪茵, 张志林. 用反应溅射法沉积SiOx绝缘层的InGaZnO-TFT的光照稳定性[J]. 发光学报, 2012,(11): 1258-1263

LI Jun, ZHOU Fan, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. The Stability of IGZO-TFT with Reactive Sputtered SiOx Insulator under White Light Illumination[J]. Chinese Journal of Luminescence, 2012,(11): 1258-1263
李俊, 周帆, 张建华, 蒋雪茵, 张志林. 用反应溅射法沉积SiOx绝缘层的InGaZnO-TFT的光照稳定性[J]. 发光学报, 2012,(11): 1258-1263 DOI： 10.3788/fgxb20123311.1258.

LI Jun, ZHOU Fan, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. The Stability of IGZO-TFT with Reactive Sputtered SiOx Insulator under White Light Illumination[J]. Chinese Journal of Luminescence, 2012,(11): 1258-1263 DOI： 10.3788/fgxb20123311.1258.

摘要

制备了基于反应溅射SiO

绝缘层的InGaZnO-TFT

并系统地研究了InGaZnO-TFT在白光照射下的稳定性

主要涉及到光照、负偏压、正偏压、光照负偏压和光照正偏压5种情况。结果表明

器件在光照和负偏压光照下的阈值偏移较大

而在正偏压光照情况下的阈值偏移几乎可以忽略。采用

C-V

方法证明阈值电压漂移是源于绝缘层/有源层附近及界面处的缺陷。另外

采用指数模式计算了缺陷态的弛豫时间。本研究的目的就是揭示InGaZnO-TFT在白光照射和偏压下的不稳定的原因。

Abstract

We systematically investigated the stability of gallium indium zinc oxide (IGZO) thin film transistor (TFT) with reactive sputtered SiO

insulator under white light illuminaion. The research involved an overall stress conditions that included light stress (LS)

negative voltage stress (NBS)

positive voltage stress (PBS)

negative bias-light stress (NBLS)

and positive bias-light stress (PBLS). The results demonstrate a large threshold voltage shift under LS and NBLS conditions

and a negligible threshold voltage shift under PBLS condition. The

C-V

characteristics indicated that the shift of threshold voltage came from traps generated at or near the dielectric/semiconductor interface. Additionally

the stretched exponential model was used to obtain the relaxation time. This work aimed to provide an instability origin of IGZO-TFT under white light illumination and gate voltage bias.

关键词

薄膜晶体管稳定性反应溅射SiOx

Keywords

thin film transistorstabilityreactive sputtered SiOx

references

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Chen T C, Chang T C, Tsai C T, et al. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress [J]. Appl. Phys. Lett., 2010, 97(11):112104-1-3.

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