两步化学沉积法制备ZnO薄膜及其场发射特性

马毓堃; 姚 宁; 高知丰; 王爱华; 秦玉华; 张兵临

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两步化学沉积法制备ZnO薄膜及其场发射特性

论文 | 更新时间：2020-08-12

- 两步化学沉积法制备ZnO薄膜及其场发射特性
- The Preparation of ZnO Film by Two Step Chemical Deposition Method and Its Field Emission Properties
- 发光学报 2009年30卷第3期页码：368-372
- 作者机构：
  
  郑州大学物理工程学院材料物理教育部重点实验室,河南郑州,450052
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN873.95
- 纸质出版日期：2009-6-30，
  
  网络出版日期：2009-6-30，
  
  收稿日期：2008-8-25，
  
  修回日期：1900-1-2，
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马毓堃, 姚宁, 高知丰, 等. 两步化学沉积法制备ZnO薄膜及其场发射特性[J]. 发光学报, 2009,30(3):368-372.

MA Yu-kun, YAO Ning, GAO Zhi-feng, et al. The Preparation of ZnO Film by Two Step Chemical Deposition Method and Its Field Emission Properties[J]. Chinese Journal of Luminescence, 2009,30(3):368-372.
马毓堃, 姚宁, 高知丰, 等. 两步化学沉积法制备ZnO薄膜及其场发射特性[J]. 发光学报, 2009,30(3):368-372. DOI：

MA Yu-kun, YAO Ning, GAO Zhi-feng, et al. The Preparation of ZnO Film by Two Step Chemical Deposition Method and Its Field Emission Properties[J]. Chinese Journal of Luminescence, 2009,30(3):368-372. DOI：

摘要

在低温常压条件下

以ITO玻璃为衬底

采用电化学法与湿化学法结合的两步化学沉积法制备了团簇状ZnO薄膜。利用XRD

SEM分析了薄膜结构和表面形貌

并采用二极管结构在高真空条件下对薄膜进行了场发射性能测试。稳定发射后

开启电场为3.0 V/μm。当电场为5.8 V/μm时

电流密度为583.3 μA/cm

。研究表明:两步化学沉积法低温制备ZnO薄膜是可行的

且该薄膜具有良好的场发射性能。

Abstract

As the cathode electrode of field emitters

ZnO films were deposited under low-temperature and normal atmosphere conditions. To prepare the ZnO clustered rods

a ZnO film was firstly deposited on ITO glass substrates by electrodeposition method as an interlayer.Clustered ZnO rods were then grown on the ZnO films by wet chemical method. The morphology and structure were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray diffraction analysis showed that the ZnO rods are hexagonal wurtzite structure

and the

-axes of rods are mostly along the normal direction of substrate surface. It can be seen that there are a large number of flower-like clusters configuration consisting of many nanorods with diameters in the range of around 300 nm by scanning electron microscopy. This method was proved to be a repea-table

low-cost and high-yield route to synthesize ZnO nanocrystals. The field emission properties of ZnO films were measured with a parallel diode-type configuration in a vacuum chamber.The synthesized ZnO clustered films were used as the cathode

and the ITO glass sheet as the anode. The vacuum in the tested chamber is under 10

-4

Pa. The field emission of ZnO films showed that:turn-on field of about 1.3 V/μm and emission current density up to about 909.1 μA/cm

at a bias field of 5.1 V/μm for the first measurement. Over three times measurements

the field emission is getting stabile. The turn-on field is about 3.0 V/μm and emission current density is 583.3 μA/cm

at the electric field of 5.8 V/μm. It was proved that it is possible to synthesize clustered nanostructure of ZnO films by two step chemical deposition method

and the prepared ZnO films have good field emission properties. It could be a field emission cathode with charming future.

关键词

ZnO薄膜两步化学法场发射

Keywords

ZnO filmtwo-step chemical deposition methodfield emission

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