LI Hong-jian, PENG Jing-cui, YAN Yonghong, QU Shu, XIANG Jian-nan. Surface Passivation of Porous Silicon by Carbon Film[J]. Chinese Journal of Luminescence, 2000,21(2): 105-108
LI Hong-jian, PENG Jing-cui, YAN Yonghong, QU Shu, XIANG Jian-nan. Surface Passivation of Porous Silicon by Carbon Film[J]. Chinese Journal of Luminescence, 2000,21(2): 105-108DOI:
a layer of carbon film is covered on the porous silicon(PS)surface by means of radio frequency glow discharge.Raman spectra and IR spectra of the carbon film indicate that there are amino-groups and hydrogen atoms in the carbon film.IR spectra exhibit that the surface of the treated sample is mainly covered with Si-C Si-N and Si-O.Compared with the sample without the treatment
the photoluminescence(PL)intensity of the treated sampie is 4~4.5 times stronger
and the 30um blueshift of the PL peak was observed experimentally; furthermore
the intensity decay and the blueshift of the PL peak has not been observed after storing for 60 days in the atmosphere.It is presented that the enhancement of the PL intensity and stability of the treated sample is due to the existence of Si-C
Si-N and Si-O on the PS surface simultaneously
and blueshift of the PL peak is attributed to aminogroups and hydrogen atmos in the carbon film.The results show that carbon films can be an excellent passivation films on porous silicon and may be good to the practical application.