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Chinese Journal of Luminescence

Chinese Journal of Luminescence Chinese Journal of Luminescence
  • Editor-in-Chief:Fengyi Jiang
  • ISSN:1000-7032
  • eISSN:2097-3195
  • CN:22-1116/O4
  • Supervisor:Chinese Academy of Sciences
  • Sponsor:Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Luminescence Branch of Chinese Physical Society, State Key Laboratory of Luminescence and Applications
  • Publication frequency:Monthly
  • Tel.:0431-86176862
  • E-mail:fgxbt@126.com
  • Address:No.3888 Dong Nanhu Road, Changchun, Jilin, China
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Volume 46 期 3，2025 2025年46卷第3期

  • Cover Story

    “最新研究突破了纯ZnO半导体p型掺杂难题，成功制备了N掺杂p型透明导电MgZnOS薄膜，为全ZnO基光电子器件开发提供新思路。”

    GUO Ziman, WANG Yang, LIU Yang, ZHANG Teng, CHEN Jian, LU Yinmei, HE Yunbin

    DOI：10.37188/CJL.20240292
    摘要：In this study， to tackle the challenge of p-type doping of pure ZnO semiconductor， we proposed utilization of co-substitution strategies involving anionic （S2-） and cationic （Mg2+） ions， leveraging their synergistic effects to modify the electronic band structure of ZnO alloy to facilitate the activation of nitrogen acceptors. By applying pulsed laser deposition technique， we successfully fabricated N-doped p-type transparent conductive MgZnOS thin films. The crystal structures， optoelectronic properties， and chemical compositions of the films were systematically analyzed using X-ray diffraction， transmittance spectroscopy， Hall-effect measurements， X-ray photoelectron spectroscopy， and secondary ion mass spectrometry. The experimental results indicate that the prepared MgZnOS∶N films possess a hexagonal wurtzite structure with preferential c-axis orientation. The deposited films exhibit a transmittance exceeding 80% in the ultraviolet-visible-near-infrared spectral region， and Mg doping significantly broadens the optical bandgap of the ZnO alloy films. The Mg and S contents in the prepared p-type conductive films are 9% and 25%， respectively， and the films have a hole concentration of 2.02×1019 cm-3， a Hall mobility of 0.25 cm2/（V·s）， and a resistivity of 1.24 Ω·cm. Based on the successful fabrication of p-type MgZnOS∶N film， we designed and constructed a novel p-MgZnOS∶N/n-ZnO quasi-homogeneous p-n junction ultraviolet photodetector. The fabricated device exhibits typical diode rectification characteristics （with a turn-on voltage of approximately 1.21 V） and demonstrates stable ultraviolet photoresponse at 0 V bias， with a peak responsivity of 2.26 mA/W （at wavelength of 350 nm）. The self-driven photoresponse is attributed to the effective separation and transport of photogenerated carriers by the built-in electric field of the p-n junction. This study offers valuable insights into the p-type doping of ZnO and holds substantial significance for the advancement of high-performance all-ZnO-based optoelectronic devices.  
    关键词：pulsed laser deposition;p-type doping;MgZnOS;p-n junction   
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  • Invited Paper

    “一维氧化锌纳米材料在光电子学领域展示非凡性能，专家综述了其在光电探测器、太阳能电池等方面的应用发展现状，为器件性能优化提供新思路。”

    WANG Xiaoxuan, LU Wendong, XU Chunxiang

    DOI：10.37188/CJL.20240267
    摘要：In recent decades， one-dimensional （1D） zinc oxide （ZnO） nanomaterials have attracted widespread attention and interest due to their unique optical and electrical properties， demonstrating extraordinary performance in various optoelectronic fields such as light emission， detection， sensing， and catalysis. 1D core-shell nanostructures not only enable surface modification and the integration of functional materials， but also possess optical characteristics for radial localization and axial transport， as well as electrical characteristics for directional carrier transport. This results in a rich array of physical and chemical properties， playing an important role in the research and development of performance optimization and functional expansion for optoelectronic devices. This article introduces the controllable preparation of 1D ZnO nanowire arrays and the precise fabrication of core-shell structures， the research progress on the photoluminescence and electroluminescence characteristics， as well as the current status of functional applications in optoelectronic detectors， solar cells， photoelectrochemical catalysis， and optoelectronic sensing. Finally， the article summarizes and prospects the development potential and challenges faced by 1D ZnO core-shell nanostructure devices.  
    关键词：1D ZnO nano array;core-shell structure;precise fabrication;optoelectronic device   
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    “据最新报道，宽带隙氧化物半导体深紫外探测器研究取得重要进展，非晶Ga2O3薄膜展现出优异的深紫外响应特性，为未来深紫外探测产业应用奠定基础。”

    LIANG Huili, ZHU Rui, DU Xiaolong, MEI Zengxia

    DOI：10.37188/CJL.20240266
    摘要：Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters. This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga2O3 （a-Ga2O3） thin films. It has been found that the photoresponse performance of a-Ga2O3 thin film is comparable or even better than that of crystalline thin films. Numerous results demonstrate that oxygen vacancy （VO） defects play a crucial role in device performance. Based on the effective modulation of VO defects， high performance solar-blind ultraviolet photodetectors can be successfully achieved. In addition， the persistent photoconductivity effect， which is usually accompanied by the presence of VO defects in oxide materials， provides a new perspective for the development of optoelectronic synaptic devices in deep ultraviolet range. Finally， a brief discussion is provided concerning the above research progress as well as some unsolved issues. These advancements are expected to promote the industrial application of wide bandgap oxide semiconductor materials， especially a-Ga2O3， in deep ultraviolet detection in the future.  
    关键词：Solar-blind ultraviolet;photodetector;MgZnO;Ga2O3;amorphous   
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    “In the realm of energy harvesting microsystems, rectifying circuits are indispensable for converting AC to DC. This study introduces its research progress in optimizing diode performance by modulating oxygen vacancy concentration in InGaZnO films. Expert researchers effectively controlled the diode's electrical performance by adjusting oxygen vacancy, providing a methodology for optimizing rectifying diodes.”

    JIA Bin, TONG Xiaowen, HAN Zikang, QIN Ming, WANG Lifeng, HUANG Xiaodong

    DOI：10.37188/CJL.20240265
    摘要：Rectifying circuit， as a crucial component for converting alternating current into direct current， plays a pivotal role in energy harvesting microsystems. Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes. Conversely， metal oxide diodes， with their simple fabrication techniques， offer advantages for system integration. The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device， so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration. This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process. Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm-²， with a rectification ratio of 6.94 × 10⁴， efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude. These results demonstrate its potential in energy conversion and management. By adjusting the oxygen vacancy， a methodology is provided for optimizing the performance of rectifying diodes.  
    关键词：InGaZnO;Schottky barrier diode;oxygen vacancy;rectifying performance   
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