Sponsor:Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Luminescence Branch of Chinese Physical Society, State Key Laboratory of Luminescence and Applications
Publication frequency:Monthly
Tel.:0431-86176862
E-mail:fgxbt@126.com
Address:No.3888 Dong Nanhu Road, Changchun, Jilin, China
GUO Ziman, WANG Yang, LIU Yang, ZHANG Teng, CHEN Jian, LU Yinmei, HE Yunbin
DOI:10.37188/CJL.20240292
摘要:In this study, to tackle the challenge of p-type doping of pure ZnO semiconductor, we proposed utilization of co-substitution strategies involving anionic (S2-) and cationic (Mg2+) ions, leveraging their synergistic effects to modify the electronic band structure of ZnO alloy to facilitate the activation of nitrogen acceptors. By applying pulsed laser deposition technique, we successfully fabricated N-doped p-type transparent conductive MgZnOS thin films. The crystal structures, optoelectronic properties, and chemical compositions of the films were systematically analyzed using X-ray diffraction, transmittance spectroscopy, Hall-effect measurements, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The experimental results indicate that the prepared MgZnOS∶N films possess a hexagonal wurtzite structure with preferential c-axis orientation. The deposited films exhibit a transmittance exceeding 80% in the ultraviolet-visible-near-infrared spectral region, and Mg doping significantly broadens the optical bandgap of the ZnO alloy films. The Mg and S contents in the prepared p-type conductive films are 9% and 25%, respectively, and the films have a hole concentration of 2.02×1019 cm-3, a Hall mobility of 0.25 cm2/(V·s), and a resistivity of 1.24 Ω·cm. Based on the successful fabrication of p-type MgZnOS∶N film, we designed and constructed a novel p-MgZnOS∶N/n-ZnO quasi-homogeneous p-n junction ultraviolet photodetector. The fabricated device exhibits typical diode rectification characteristics (with a turn-on voltage of approximately 1.21 V) and demonstrates stable ultraviolet photoresponse at 0 V bias, with a peak responsivity of 2.26 mA/W (at wavelength of 350 nm). The self-driven photoresponse is attributed to the effective separation and transport of photogenerated carriers by the built-in electric field of the p-n junction. This study offers valuable insights into the p-type doping of ZnO and holds substantial significance for the advancement of high-performance all-ZnO-based optoelectronic devices.
摘要:In recent decades, one-dimensional (1D) zinc oxide (ZnO) nanomaterials have attracted widespread attention and interest due to their unique optical and electrical properties, demonstrating extraordinary performance in various optoelectronic fields such as light emission, detection, sensing, and catalysis. 1D core-shell nanostructures not only enable surface modification and the integration of functional materials, but also possess optical characteristics for radial localization and axial transport, as well as electrical characteristics for directional carrier transport. This results in a rich array of physical and chemical properties, playing an important role in the research and development of performance optimization and functional expansion for optoelectronic devices. This article introduces the controllable preparation of 1D ZnO nanowire arrays and the precise fabrication of core-shell structures, the research progress on the photoluminescence and electroluminescence characteristics, as well as the current status of functional applications in optoelectronic detectors, solar cells, photoelectrochemical catalysis, and optoelectronic sensing. Finally, the article summarizes and prospects the development potential and challenges faced by 1D ZnO core-shell nanostructure devices.
摘要:Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters. This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga2O3 (a-Ga2O3) thin films. It has been found that the photoresponse performance of a-Ga2O3 thin film is comparable or even better than that of crystalline thin films. Numerous results demonstrate that oxygen vacancy (VO) defects play a crucial role in device performance. Based on the effective modulation of VO defects, high performance solar-blind ultraviolet photodetectors can be successfully achieved. In addition, the persistent photoconductivity effect, which is usually accompanied by the presence of VO defects in oxide materials, provides a new perspective for the development of optoelectronic synaptic devices in deep ultraviolet range. Finally, a brief discussion is provided concerning the above research progress as well as some unsolved issues. These advancements are expected to promote the industrial application of wide bandgap oxide semiconductor materials, especially a-Ga2O3, in deep ultraviolet detection in the future.
“In the realm of energy harvesting microsystems, rectifying circuits are indispensable for converting AC to DC. This study introduces its research progress in optimizing diode performance by modulating oxygen vacancy concentration in InGaZnO films. Expert researchers effectively controlled the diode's electrical performance by adjusting oxygen vacancy, providing a methodology for optimizing rectifying diodes.”
JIA Bin, TONG Xiaowen, HAN Zikang, QIN Ming, WANG Lifeng, HUANG Xiaodong
DOI:10.37188/CJL.20240265
摘要:Rectifying circuit, as a crucial component for converting alternating current into direct current, plays a pivotal role in energy harvesting microsystems. Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes. Conversely, metal oxide diodes, with their simple fabrication techniques, offer advantages for system integration. The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device, so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration. This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process. Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm-², with a rectification ratio of 6.94 × 10⁴, efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude. These results demonstrate its potential in energy conversion and management. By adjusting the oxygen vacancy, a methodology is provided for optimizing the performance of rectifying diodes.